WPM2019 WILLSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-523
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging SOT-523 Pin configuration (Top view) P9* P9 =Device Code * = Month(A~Z) Marking Order information Device Package Shipping WPM2019-3/TR SOT-523 3000/Reel&Tape V DS (V) Rds(on) ( ȍ) 0.480@ V GS =̢4.5V 0.620@ V GS =̢2.5V -20 0.780@ V GS =̢1.8V D GS The WPM2019 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2019 is Pb-free and Halogen-free. Http://www.sh-willsemi.com Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.4 S G D
-20 Gate-Source Voltage V GS V T A =25°C -0.73 -0.62 Continuous Drain Current a T A =70°C I D -0.58 -0.50 A T A =25°C 0.38 0.28 Maximum Power Dissipation a T A =70°C P D 0.24 0.18 W T A =25°C -0.61 -0.55 Continuous Drain Current b T A =70°C I D -0.49 -0.44 A T A =25°C 0.27 0.22 Maximum Power Dissipation b T A =70°C P D 0.17 0.14 W Pulsed Drain Current c I DM -1.2 A Operating Junction Temperature T J 150 °C Lead Temperature T L 260 °C Storage Temperature Range T stg -55 to 150 Thermal resistance ratings Parameter Symbol Typical Maximum Unit t 10 s 285 325 Junction-to-Ambient Thermal Resistance a Steady State R șJA 355 440 t 10 s 395 460 Junction-to-Ambient Thermal Resistance b Steady State R șJA 465 560 Junction-to-Case Thermal Resistance Steady State R șJC 280 320 °C/W a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, t p =10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature T J =150°C. Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.4
Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16 V, V GS = 0V -1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±5V -5 uA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D V GS = -4.5V, I D = -0.45A 480 810 V GS = -2.5V, I D = -0.35A 620 1050 Drain-to-source On-resistance R DS(on) V GS = -1.8V, I D = -0.25A 780 1300 Forward Transconductance g FS V DS = -5 V, I D =-0.45A 1.25 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 74.5 Output Capacitance C OSS 10.8 Reverse Transfer Capacitance C RSS V GS = 0 V, f = 100KHz, V DS -10 V 10.2 pF Total Gate Charge Q G(TOT) 1.8 Threshold Gate Charge Q G(TH) Gate-to-Source Charge Q GS 0.18 Gate-to-Drain Charge Q GD V GS = -4.5 V, V DS = -10 V, I D = -0.45A 0.74 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 45 Rise Time tr 140 Turn-Off Delay Time td(OFF) 1500 Fall Time tf V GS = -4.5 V, V DS = -10 V, R G =6 2100 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S I D =-0.45A, 0.12 Will Semiconductor Ltd. 3 2015/08/25 – Rev. 1.4
(Ta=25 o C, unless otherwise noted) 012345 0.0 0.5 1.0 1.5 2.0 V GS = -2.5 ~ -5V Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature Threshold voltage vs. Temperature V GS = -2.0V V GS = -1.5V DS _Drain to Source Current (A) DS _Drain to Source Voltage (V) 300 600 900 1200 1500 T=-50 C T=125 C V DS = -5V DS - Drain Current (A) GS - Gate to Drain Voltage (V) T=25 C 200 400 600 800 1000 V GS =-2.5V V GS =-4.5V R DS(on) - On-Resistance (m I DS -Drain to Source Current (A) 200 400 600 800 1000 1200 1400 I DS =-0.45A R DS(on)- On-Resistance (m GS -Gate to Source Voltage(V) -50 0 50 100 150 300 400 500 600 700 V GS =-4.5V I DS =-0.45A R DS(on) - On-Resistance (m Temperature ( -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 I DS = -250uA GS(TH) - Threshold Voltage (V) Temperature ( Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.4
T=25 C Body diode forward voltage Safe operating power Transient thermal response (Junction-to-Ambient) 02468 1 0 120 V GS f=100KHZ C-Capacitance (pF) DS - Drain to Source Voltage (V) Cin Cout Crss T=125 C SD - Source to Drain Current (A) SD - Source to Drain Voltage(V) 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Power (W) T J(Max) =150°C T A =25°C 0.01 0.10 1.00 10.00 0.1 1 10 100 DS (Volts) D (Amps) 100 μ s m s 1ms 0.1s 10s DC R DS(ON) limited T J Max =150°C, T A =25°C 0.01 0.1 Z θθθθJA Normalized Transient Thermal Resistance Single Pulse D=T on T J,PK A DM θJA θJA R θJA =440°C/W In descending order T on T P D T on P D Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.4
Package outline dimensions Dimensions in millimeter Symbol Min. Typ. Max. A 0.700 0.800 0.900 A1 0.000 0.050 0.100 A2 0.700 0.750 0.800 b1 0.150 0.200 0.250 b2 0.250 0.300 0.350 c 0.100 0.150 0.200 D 1.500 1.600 1.700 E 0.700 0.800 0.900 E1 1.450 1.600 1.750 e 0.500TYP e1 0.900 1.000 1.100 L 0.400REF L1 0.260 0.460 © 0e 8e SOT-523 Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.4