WPM2015 WILLSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging SOT-23 Pin configuration (Top view) WT1* WT1= Device Code * = Month (A~Z) Marking Order information Device Package Shipping WPM2015-3/TR SOT-23 3000/Reel&Tape V DS (V) Rds(on) ( ȍ) 0.081@ V GS =4.5V -20 0.103@ V GS =2.5V D GS The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2015 is Pb-free and Halogen-free. Http://www.sh-willsemi.com Will Semiconductor Ltd. 1 Mar,2018 – Rev.1.2
-20 Gate-Source Voltage V GS V T A =25°C -2.4 -2.2 Continuous Drain Current a T A =70°C I D -1.9 -1.7 A T A =25°C 0.9 0.8 Maximum Power Dissipation a T A =70°C P D 0.5 0.5 W T A =25°C -2.2 -2.0 Continuous Drain Current b T A =70°C I D -1.7 -1.6 A T A =25°C 0.7 0.6 Maximum Power Dissipation b T A =70°C P D 0.5 0.4 W Pulsed Drain Current c I DM -10 A Operating Junction Temperature T J 150 Lead Temperature T L 260 Storage Temperature Range T stg -55 to 150 Thermal resistance ratings Parameter Symbol Typical Maximum Unit t 10 s 105 135 Junction-to-Ambient Thermal Resistance a Steady State R șJA 120 155 t 10 s 130 160 Junction-to-Ambient Thermal Resistance b Steady State R șJA 145 190 Junction-to-Case Thermal Resistance Steady State R șJC 60 75 °C/W a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380μs, Duty Cycle<2% d Maximum junction temperature T J =150°C. Will Semiconductor Ltd. 2 Mar,2018 – Rev.1.2
Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -20 V Zero Gate Voltage Drain Current I DSS V DS = -16V, V GS = 0V -1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = f8V f 100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D V GS = -4.5V, I D = -2.7A 81 110 Drain-to-source On-resistance b, c R DS(on) V GS = -2.5V, I D = -2.2A 103 150 CAPACITANCES, CHARGES Input Capacitance C ISS 534 Output Capacitance C OSS Reverse Transfer Capacitance C RSS V GS = 0 V, f = 1.0 MHz, V DS = -10 V 54 pF Total Gate Charge Q G(TOT) 7.3 Threshold Gate Charge Q G(TH) 0.5 Gate-to-Source Charge Q GS 1.25 Gate-to-Drain Charge Q GD V GS = -4.5 V, V DS = -10 V, I D = -2.7A 1.15 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 8.0 Rise Time tr 6.4 Turn-Off Delay Time td(OFF) 41.0 Fall Time tf V GS = -4.5 V, V DS = -10 V, I D =-1.2A, R G =6 7.0 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S Will Semiconductor Ltd. 3 Mar,2018 – Rev.1.2
(Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature V DS =-5V T=125 o C T=25 o C T=-50 o C DS -Drain Source Current(A) GS -Gate to Source Voltage(V) V GS =-2.5V V GS =-1.5V V GS =-3V V GS =-4V V GS =-4.5V DS -Drain to Source Current(A) DS -Drain to Source Voltage(V) 12345 100 120 140 160 V GS =-2.5V V GS =-4.5V V GS =-1.8V DS(ON) -On Resistance(m DS -Drain to Source Current(A) 120 160 200 240 280 I D =-2.7A R DS(ON) -Reistance(m GS -Gate to Source Voltage(V) -50 0 50 100 150 100 120 140 -50 0 V GS =-4.5V,I D =-2.7A R DS(ON) -On Resistance(m Temperature( o 50 100 150 0.2 0.4 0.6 0.8 1.0 I D =-250uA GS(th) -Gate Threshold Voltage(V) Temperature( o Will Semiconductor Ltd. 4 Mar,2018 – Rev.1.2
Body diode forward voltage Safe operating power Gate Charge Characteristics 02468 1 0 100 200 300 400 500 600 700 800 F=1MHZ Crss Coss Ciss C-Capacitance(pF) DS -Drain to Source Voltage(V) T=25 o C T=125 o C SD -Source to Drain Current(A) SD -Source to Drain Voltage(V) 02468 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 I D =-2.7A GS -Gate to Source Voltage Qg (nc) 0.01 0.1 1 10 100 1000 Time (s) Power (W) T A = 25 °C V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.1 0.1 1 10 T A = 25 °C Single Pulse 1m s 10 ms 100 ms 0.01 DC BVDSS Limited 100 Limited byR DS(on) 10 s 100 μs Will Semiconductor Ltd. 5 Mar,2018 – Rev.1.2
Transient thermal response (Junction-to-Ambient) 1 10 100010 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Duty Cycle = 0.5 Single Pulse 0.02 0.05 t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA =120 °C/W 3. T JM A DM Z thJA(t) t t 4. Surface Mounted Will Semiconductor Ltd. 6 Mar,2018 – Rev.1.2
Package outline dimensions SOT-23 D E e TOP VIEW b c SIDE VIEW SIDE VIEW A Symbol Dimensions in Millimeters Min. Typ. Max. A 0.89 1.10 1.30 A1 0.00 - 0.10 b 0.30 0.43 0.55 c 0.05 - 0.20 D 2.70 2.90 3.10 E 1.15 1.33 1.50 E1 2.10 2.40 2.70 e 0.95 Typ. e1 1.70 1.90 2.10 Will Semiconductor Ltd. 7 Mar,2018 – Rev.1.2
R e e l D i m e n s i o n s RD W Quadrant Assignments For PIN1 Orientation In Tape RD Reel Dimension W Overall width of the carrier tape 1 P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant User Direction of Feed Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 7inch 13inch 2mm 8mm 4mm 8mm 12mm 16mm Will Semiconductor Ltd. 8 Mar,2018 – Rev.1.2