WPM2005B WILLSEMI | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low V F Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (T J = 25ć unless otherwise noted) Parameter Symbol Value Units Drain-Source voltage V DSS -20 V Gate-Source Voltage V GS f8 V Continuous Drain Current I D -2.7 A Drain Current-Pulsed I DM -10 A Power Dissipation P D 1.1 W Junction Temperature T J 150 ć Storage Temperature T stg -55~150 ć Thermal Resistance, Junction-to-Ambient R Ԧ JA 110 ć/W SCHOTTKY DIODE MAXIMUM RATINGS(T J = 25ć unless otherwise noted) Parameter Symbol Limits Unit Peak repetitive reverse voltage V RRM 20 V DC Blocking voltage V R 20 V Average rectified forward current I F 1 A http://www.willsemi.com Page 1 DFN3×2-8L Marking: pin connections: C C D D A A S G JA J = Specific Device Code A = Date Code Order information PartNumber Package Shipping WPM2005BͲ8/TR DFN3*2- 8 3000Tape&Reel L 0 2015 Rev 1.5Jan,
MOSFET ELECTRICAL CHARACTERISTICS(Tamb=25ć unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = 0V,I D = -250ȝA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16V,V GS = 0V -1 ȝA Gate –Source leakage current I GSS V GS = f8V, V DS = 0V f100 nA On Characteristics Gate Threshold Voltage V GS(th) V GS = V DS , I D =-250ȝA -0.45 V V GS = -4.5V, I D = -2.7A 125 mȍ Static Drain-Source On-Resistance R DS(on) V GS = -2.5V,I D = -2.2A 160 mȍ Forward Transconductance g FS V DS = -10V, I D = -2.7A 7.0 S Dynamic Characteristics Input Capacitance C iss 300 pF Output Capacitance C oss 150 pF Reverse Transfer Capacitance C rss V DS = -10V, V GS = 0V, f = 1.0 MHz 50 pF Switching Characteristics Turn-On Delay Time t d(on) 25 ns Turn-On Rise Time t r 45 ns Turn-Off Delay Time t d(off) 45 ns Turn-Off Fall Time t f V GS = -4.5V, V DD = -10V, I D = -1.0A, R G =6.0ȍ, 40 ns Total Gate Charge Q G(TOT) 3.0 6. 5 nC Threshold gate charge Q G(TH) 0.2 nC Gate-Source Charge Q GS 1.4 nC Gate-Drain Charge Q GD V DS = -10V,I D = -2.7A, V GS =-4.5V 0.7 nC Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage V SD V GS = 0V,I S = -0.9A -1.5 SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25eC unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Conditions V 0.425 I F =0.1A V 0.480 I F =0.5A Forward voltage V 0.575 V I F =0.6A I 20 ȝAV R =10V Reverse current I 100 ȝAV R =20V http://www.willsemi.com Page 2 WPM2005B Welding temperature curve MSL=1 V -0.81 0 2015 Rev 1.5Jan,
http://www.willsemi.com Page 3 WPM2005B J = 25°C unless otherwise noted) V GS =5t h r u3V T C =- - 5 5_C 125_C 25_C Output Characteristics Transfer Characteristics V DS - - Drain-to-Source Voltage (V) - - Drain Current (A)I D V GS - - Gate-to-Source Voltage (V) - - Drain Current (A)I D 1.5 V 2.5 V - - On-Resistance (r DS(on) 0.6 0.8 1.0 1.2 1.4 1.6 - -50 - -25 0 25 50 75 100 125 150 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 1 0 V DS - - Drain-to-Source Voltage (V) C rss C oss C iss V DS =1 0V I D =2 . 7A I D - - Drain Current (A) V GS =4 . 5V I D =2 . 7A V GS =2 . 5V V GS =4 . 5V Gate Charge On-Resistance vs. Drain Current - - Gate-to-Source Voltage (V) Q g - - Total Gate Charge (nC) C - - Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature T J - - Junction Temperature (_C) (Normalized) - - On-Resistance (r DS(on) V GS =1 . 8V 200 400 600 800 048 1 2 1 6 2 0 0 2015 Rev 1.5Jan,
http://www.willsemi.com Page 4 WPM2005B 0.0 0.1 0.2 0.3 0.4 012345 T J = 150_C I D =2 . 7A Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - - On-Resistance (r DS(on) V SD - - Source-to-Drain Voltage (V) V GS - - Gate-to-Source Voltage (V) - - Source Current (A)I S T J =2 5_C Power (W) Single Pulse Power Time (sec) 1 100 6001010 -- 1 -- 2 -- 4 -- 3 -- 3 -- 2 1 10 60010 -- 1 -- 4 100 -- 0 . 2 -- 0 . 1 0.0 0.1 0.2 0.3 0.4 - -50 - -25 0 25 50 75 100 125 150 I D = 250mA 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage Variance (V)V GS(th) T J - - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA =9 0_C/W 3. T JM -- T A DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM 0 2015 Rev 1.5Jan,
http://www.willsemi.com Page 5 WPM2005B -- 3 -- 2 11 010 -- 1 -- 4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance - - Junction Capacitance (pF) 0.8 1.0 0.1 Forward Voltage Drop V F - - Forward Voltage Drop (V) - - Forward Current (A)I F 00 . 2 0 . 4 T J = 150_C Capacitance 120 150 048 1 2 1 6 2 0 V KA - - Reverse Voltage (V 125 150 0.0001 Reverse Current vs. Junction Temperature T J - - Junction Temperature (_C) - - Reverse Current (mA)I R 0 2 55 07 5 1 0 0 C T 10 V 0.001 0.01 0.1 20 V 0.6 T J =2 5_C 0 2015 Rev 1.5Jan,
DFNWB3X2-8L(P0.65T0.75/0.85) PACKAGE OUTLINE DIMENSIONS http://www.willsemi.com Page 6 WPM2005B 0 2015 Rev 1.5Jan,