WPM1480 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

'66 RQ 7\\S /g23720 V 110 m¡ @ /g2374.5 V 150 m¡ @ /g2372.5 V Application /g122 Li-Ion Battery Charging /g122 High Side DC-DC Conversion Circuits /g122 High Side Drive for Small Brushless DC Motors /g122 Power Management in Portable, Battery Powered Products 3DUW1XPEHU 3DUW1XPEHU 6KLSSLQJ WPM1480-3/TR SOT-323/SC-70 3000Tape&Reel SC−70/SOT−323 S G D P−Channel MOSFET TS = Specific Device Code M = Date Code TS M 1 2 Gate Source Drain Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.4 Http://www.sh-willsemi.com

Electrical Characteristics

Symbol Parameter Test conditions Min. Typ. Max. Units BV DSS Drain-Source Voltage I D =-250/g541A, V GS =0V -20 V T C =25 ć -1 /g541A I DSS Zero Gate Voltage Drain Current V DS = -16V, V GS =0V T C =55 ć -5 /g541A I GSS Gate-body Leakage Current V DS =0V, V GS =f8V ±100 nA Symbol Parameter Test conditions Min. Typ. Max. Units V GS(th) Gate Threshold Voltage V DS GS , I D V GS = -4.5V, I D /g525 V GS = -2.5V, I D /g525 R DS(ON) Static Drain-Source On resistance V GS = -1.8V, I D /g525 Symbol Parameter Test conditions Min. Typ. Max. Units g FS Transconductance V DS = -10V, I D = -1A 4 6 S C iss Input Capacitance 480 pF C oss Output Capacitance 58 pF C rss Reverse Transfer Capacitance V DS = -10V, V GS =0V, f=1MHz 51 pF R g Gate Resistance V DS =0V, V GS =0V, f=1MHz 12 /g525 Symbol Parameter Test conditions Min. Typ. Max. Units Q g Total Gate Charge 6.5 nC Q gs Gate Source Charge 0.3 nC Q gd Gate Drain Charge V GS = -4.5V, I D = -1.2A, V DS = -10V 0.7 nC t D(on) Turn-On Delay Time 8.0 ns t r Turn-On Rise Time 6.0 ns t D(off) Turn-Off Delay Time 42 ns t f Turn-Off Fall Time V GS = -4.5V, V DS = -10V, I D = -1.2A, R GEN =6/g525 7.0 ns Symbol Parameter Test conditions Min. Typ. Max. Units V SD Diode Forward Voltage I S = -1A, V GS =0V I s Maximum Body-diode Continuous Current -1 A t rr Body-diode Reverse Recovery Time 30 ns Q rr Body-diode Reverse Recovery Charge I s = -1.0A, di/dt=100A//g541s 12 nC = -1.0A 110 255 = -0.5A 150 355 = -0.3A 190 405 m m m -0.79 -1.5 V Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.4

㺘 എ⍱✺䈅傼ᶑԦ എ⍱✺ᶑԦ ᰐ䫵⭥䭰ӗ૱ ກሱփ৊ᓖt2.5 mm ᡆກሱփփ〟 t350 mm ກሱփ৊ᓖ< 2.5 mm фກሱփփ〟 < 350 mm ⑙ᓖкॷ䙏⦷ 3 °C/second max. 亴✝⑙ᓖ -վ⑙ (Ts(min)) -儈⑙ m(Ts(ax)) -ᰦ䰤 (儈⑙)( t s ) 150 °C 200 °C 60-180 seconds Ӿ亴✝⑙ᓖTs(max)㔤 ᤱ⑙ᓖTL - ⑙ॷ䙏⦷ 3 °C/second max. Time maintained above: - ⑙ᓖ (TL) - ᰦ䰤(tL) 217 °C 60-150 seconds 㔤ᤱ൘⌒ጠ⑙ᓖⲴᰦ䰤 Temperature (tp) 10-30seconds 20-40seconds 䱽⑙䙏⦷ 6 °C/second max. Ӿ 25 ǂC⌒ጠ⑙ᓖⲴ 8 minutes max. Welding temperature curve Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.4

SOT-323/SC-70 Package Outline Dimension STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN C N A L D G S B H J K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.032 0.040 0.80 1.00 D 0.012 0.016 0.30 0.40 G 0.047 0.055 1.20 1.40 H 0.000 0.004 0.00 0.10 J 0.004 0.010 0.10 0.25 K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF S 0.079 0.095 2.00 2.40 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 SOLDERING FOOTPRINT Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.4