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Document overview

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Technical content

Features

  • High Temperature, Humidity, and Bias Operation
  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Ease of Paralleling
  • Copper Baseplate and Aluminum Nitride Insulator System Benefits
  • Enables Compact, Lightweight, Efficient Systems
  • Harsh Outdoor Environment Installation
  • Mitigates Over-voltage Protection
  • Reduced Thermal Requirements
  • Reduced System Cost

Applications

  • Solar and Wind Inverters
  • Auxiliary Converters
  • Traction
  • UPS and SMPS
  • Motor Drives Package 62mm x 106mm x 30mm Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage -10/+25 V Absolute Maximum values VGSop Gate - Source Voltage -5/+20 V Recommended Operational Values ID Continuous Drain Current 423 A VGS = 20 V, TC = 25 ˚C Fig. 26

293 VGS = 20 V, TC = 90 ˚C

ID(pulse) Pulsed Drain Current 1500 A Pulse width tP limited by Tjmax Fig. 29 TJmax Junction Temperature 150 ˚C TC ,TSTG Case and Storage Temperature Range -40 to +125 ˚C Visol Case Isolation Voltage 5.0 kV AC, 50 Hz , 1 min LStray Stray Inductance 15 nH Measured between terminals 2 and 3 PD Power Dissipation 1668 W TC = 25 ˚C, TJ = 150 ˚C Fig. 25 Part Number Package Marking WAS300M12BM2 62mm Module WAS300M12BM2 VDS 1.2 kV Esw, Total @ 300A 12 mJ RDS(on) 4.2 mΩ

WAS300M12BM2 Rev. -, May 2017 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDSS Drain - Source Blocking Voltage 1.2 kV VGS = 0 V, ID = 2 mA VGS(th) Gate Threshold Voltage 2.0 2.5 V VDS = VGS, ID = 15 mA Fig 7 IDSS Zero Gate Voltage Drain Current 600 2000 μA VDS = 1.2 kV, VGS = 0V 1500 VDS = 1.2 kV,VGS = 0V, TJ = 150 ˚C IGSS Gate-Source Leakage Current 1 100 nA VGS = 20 V, VDS = 0V RDS(on) On State Resistance 4.2 5.3 mΩ VGS = 20 V, IDS = 300 A Fig. 4, 5, 67.7 VGS = 20 V, IDS = 300 A, TJ = 150 ˚C gfs Transconductance 156 S VDS = 20 V, IDS = 300 A Fig. 8

144 VDS = 20 V, ID = 300 A, TJ = 150 ˚C

Ciss Input Capacitance 19.3 nF VDS = 600 V, f = 200 kHz, VAC = 25 mV Fig. 16, 17Coss Output Capacitance 2.57 Crss Reverse Transfer Capacitance 0.12 Eon Turn-On Switching Energy 5.8 mJ VDD = 600 V, VGS = -5V/+20V ID = 300 A, RG(ext) = 2.5 Ω Load = 77 μH, TJ = 150 ˚C Note: IEC 60747-8-4 Definitions Fig. 22 EOff Turn-Off Switching Energy 6.1 mJ RG (int) Internal Gate Resistance 3.0 Ω f = 200 kHz, VAC = 25 mV QGS Gate-Source Charge 166 nC VDD= 800 V, VGS = -5V/+20V, ID= 300 A, Per JEDEC24 pg 27 Fig. 15QGD Gate-Drain Charge 475 QG Total Gate Charge 1025 td(on) Turn-on delay time 76 ns VDD = 600V, VGS = -5/+20V, ID = 300 A, RG(ext) = 2.5 Ω, Timing relative to VDS Note: IEC 60747-8-4, pg 83 Inductive load Fig. 23tr Rise Time 68 ns td(off) Turn-off delay time 168 ns tf Fall Time 43 ns VSD Diode Forward Voltage 1.6 2.0 V IF = 300 A, VGS = 0 Fig. 10 2.0 IF = 300 A, TJ = 150 ˚C, VGS = 0 Fig. 11 QC Total Capacitive Charge 3.2 μC Note: The reverse recovery is purely capacitive Thermal Characteristics (per switch) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.070 0.075 ˚C/W Tc = 90 ˚C, PD = 150 W Fig. 27 RthJCD Thermal Resistance Juction-to-Case for Diode 0.073 0.076 Tc = 90 ˚C, PD = 130 W Fig. 28 Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 300 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal Creepage Distance 30 mm Terminal to terminal 40 mm Terminal to baseplate

WAS300M12BM2 Rev. -, May 2017 Schematic Package Dimensions (mm)

WAS300M12BM2 Rev. -, May 2017 Copyright © 2015 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Module Application Note The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will aford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V DS overshoots. Please refer to application notes: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12 and CPWR-AN13]