WAA2995

WAA2995 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Control:1.2W,1W,0.8W,0.6W  Built-in Adaptive Charge Pump Power Supply  Low Output Noise : 41μVrms @ gain=8V/V  High Efficiency : 81%  Low quiescent current: 3.6mA(3.6V)  2.2W Output into 8Ω Load at 4.2V With THD+N=10%  THD+N :0.006%@1kHz,800mW,8Ω Load,3.8V Supply  Thermal and Short-Circuit Protection with Auto Recover  Single Wire Pulse Control

Applications

 Tablet PC  Mobile Phone  Portable Media Players Http//:www.willsemi.com CSP-15L (Bottom View) Pin configuration (Top view) Marking 299x = Device Code A C = Special Code Y = Year Code W = Week Code Order information Device Package Shipping WAA2995C-1 5/TR 15-ball WLCSP 1.57x1.61mm 3000 / tape & Reel C2N D B C C1N C2P C1P GND C2N VDD PVDD 1 2 3 VOP GND VON INP INN VDD SHDNA 299x ACYW

Will Semiconductor Ltd. 2 May, 2018 - Rev. 1.0 Pin descriptions Pin Number Symbol Description A1 INP Positive audio input of the Class G Audio Amplifier A2 INN Negative audio input of the Class G Audio Amplifier A3,B3 VDD Supply voltage A4 SHDN Single wire Pulse Control Terminal B1,B2 C2N Charge-Pump Flying Capacitor Terminal B4 VOP Positive PWM audio Output of the Class G Audio Amplifier C1 C1N Charge-Pump Flying Capacitor Terminal C2,C4 GND Ground D1 C2P Charge-Pump Flying Capacitor Terminal D2 C1P Charge-Pump Flying Capacitor Terminal D3 PVDD Audio power stage supply voltage D4 VON Negative PWM audio Output of the Class G Audio Amplifier Typical applications 1.5X Adaptive Charge-Pump VBAT VDD(A3,B3) INP(A1) INN(A2) AMP PWM C1P(D2) C1N(C1) C2P(D1) C2N(B1,B2) PVDD(D3) 4.7uF/10V Cpvdd 33nF Cin 33nF Cin Rin Rin VON(D4) VOP(B4) SHDN(A4) GND(C2) GND(C4) 1nF 1nF CLp 100k 4.7uF C1 0.1uF 2.2uF Cf1 2.2uF Cf2 AGC

Will Semiconductor Ltd. 3 May, 2018 - Rev. 1.0 Absolute maximum ratings Parameter Min Max Unit Supply Voltage VDD -0.3 5.5 V Input Voltage INP ,INN,SHDN -0.3 VDD+0.3 V Operating free-air temperature range TA -40 85 °C Operating junction temperature range TJ -40 150 °C Storage temperature range TSTG -65 150 °C Minimum load impedance 4 Ω ESD(2) Human Body Model (HBM) ESD 2000 V Machine Model (MM) ESD 200 V Thermal Metric θJA 15-ball WLCSP 1.57x1.61mm 70 °C/W (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is n ot implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. (2) This device series contains ESD protection and passes the following tests: Human Body Model (HBM) standard: MIL-STD-883J/Method 3015.8 for all pins. Machine Model (MM) standard: JESD22−A115C for all pins. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected t o high energy ESD. Therefore, proper ESD precautions should be taken to avoid performance degradation or loss of functionality. Electronics Characteristics (Ta=25oC, V DD=3.6V, RL = 8 Ω+33μH, Rin = 3k Ω, Cin = 1 μF ,unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Supply Voltage Range VDD 3 5 V Shutdown Current ISD 0.1 1 μA Turn Off Time TOFF 100 500 μs Over Temp Protection TOVP 155 °C Single wire pulse (SHDN PIN) High-level Input Voltage VSDIH 1.3 VDD V Low-level Input Voltage VSDIL 0 0.35 V High-level Duration TSDIH 1 10 μs Low-level Duration TSDIL 1 10 μs Charge-Pump(CP) Boost Converter Active Threshold VAT 0.7 V Over Voltage Protection VOVP 5.6 5.9 6.2 V Output Regulation Voltage PVDDS |VOP-VON|Peak < V AT VDD V |VOP-VON|Peak > V AT ,VDD*1.5 < VOVP 1.5*VDD |VOP-VON|Peak > V AT ,VDD*1.5 > VOVP VOVP V Switching Frequency FCP 1.06 MHz

Will Semiconductor Ltd. 4 May, 2018 - Rev. 1.0 CP ON Resistance RONCP VDD = 3.8V, Iout = 0.9A 1.2 Ω Class-G audio amplifier Operating Quiescent Current IQ Input AC Ground 3.6 mA Turn-on Time TON 41 ms Output Offset Voltage VOS Input AC Ground -20 20 mV Switching Frequency FPA 800 kHz Voltage Gain AV 16.6 V/V Input Impedance RIN 6.6k Ω Frequency Response of Gain BW = 20Hz to 20kHz -0.3 0.3 dB Output Noise Voltage VN Rin = 3kΩ, Cin = 33nF, Gain =16, A-weighted 54 μV Rin = 13kΩ, Cin = 33nF, Gain=8, A-weighted 41 Output Impedance in SD ZO SHDN = 0 10k Ω Total Harmonic Distortion Plus Noise THD+N VDD = 3.8V, PO = 0.3W, RL= 8Ω+33μH 0.009 % VDD = 3.8V, PO = 0.8W, RL= 8Ω+33μH 0.006 VDD = 3.8V, PO = 1.2W, RL= 8Ω+33μH 0.008 Class G + CP Efficiency η VDD = 4.2V, PO = 1 W, RL= 8Ω+33μH 79 % VDD = 3.8V, PO = 0.8 W, RL= 8Ω+33μH 81 VDD = 3.3V, PO = 0.6 W, RL= 8Ω+33μH 80 Power Supply Ripple Rejection PSRR Input AC Ground, Vripple = 200mVpp 217Hz -74 dB 1kHz -70 10kHz -52 Output Power PO VDD = 4.2V, THD+N = 1%, RL= 8Ω+33μH 1.765 W VDD = 3.8V, THD+N = 1%, RL= 8Ω+33μH 1.42 VDD = 3.3V, THD+N = 1%, RL= 8Ω+33μH 1.05 VDD = 4.2V, THD+N = 10%, RL= 8Ω+33μH 2.181 VDD = 3.8V, THD+N = 10%, RL= 8Ω+33μH 1.743 VDD = 3.3V, THD+N = 10%, RL= 8Ω+33μH 1.28 VDD = 4.2V, THD+N = 1%, RL= 6Ω+33μH 2.03 VDD = 3.8V, THD+N = 1%, RL= 6Ω+33μH 1.643 VDD = 3.3V, THD+N = 1%, RL= 6Ω+33μH 1.205 VDD = 4.2V, THD+N = 10%, RL= 6Ω+33μH 2.469 VDD = 3.8V, THD+N = 10%, RL= 6Ω+33μH 2.004 VDD = 3.3V, THD+N = 10%, RL= 6Ω+33μH 1.467 VDD = 4.2V, THD+N = 1%, RL= 4Ω+33μH 1.992 VDD = 3.8V, THD+N = 1%, RL= 4Ω+33μH 1.655 VDD = 3.3V, THD+N = 1%, RL= 4Ω+33μH 1.346

Will Semiconductor Ltd. 5 May, 2018 - Rev. 1.0 VDD = 4.2V, THD+N = 10%, RL= 4Ω+33μH 2.351 VDD = 3.8V, THD+N = 10%, RL= 4Ω+33μH 1.926 VDD = 3.3V, THD+N = 10%, RL= 4Ω+33μH 1.609 AGC Output Power POAGC VDD = 3.8V, Mode1 RL= 8Ω+33μH 1.2 W RL= 6Ω+33μH 1.6 RL= 4Ω+33μH 2.3 VDD = 3.8V, Mode2 RL= 8Ω+33μH 1.0 RL= 6Ω+33μH 1.4 RL= 4Ω+33μH 2.0 VDD = 3.8V, Mode3 RL= 8Ω+33μH 0.8 RL= 6Ω+33μH 1.1 RL= 4Ω+33μH 1.6 VDD = 3.8V, Mode4 RL= 8Ω+33μH 0.6 RL= 6Ω+33μH 0.8 RL= 4Ω+33μH 1.2 AGC Attack Time TATK VDD = 3.8V, Mode1,Mode2,Mode3,Mode4 35 ms AGC Release Time TREL VDD = 3.8V, Mode1,Mode2,Mode3,Mode4 0.85 S Max Attenuation Gain -13.5 dB Signal Noise Ratio SNR Rin = 3kΩ, Po= 1.36W, RL= 8Ω+33μH 98 dB Typical Characteristics (Ta=25oC, VDD=3.8V, RL= 8Ω+33μH ,Vin=1kHz,unless otherwise noted) Efficiency 0.00 0.11 0.22 0.33 0.44 0.55 0.66 0.77 0.88 0.99 Po(W) VDD=3.8V VDD=4.2V Efficiency

Will Semiconductor Ltd. 6 May, 2018 - Rev. 1.0 THD+N VS Po Audio Precision 11/21/17 15:52:25 ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Blue Solid 2 Analyzer.THD+N Ratio A Left 2 1 Magenta Solid 1 Analyzer.THD+N Ratio A Left 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 100m 200m 300m 400m 500m 600m 700m 800m W THD+N (%) Po(W) RL=8ohm+33uH Vin=1kHz VDD=3.8V VDD=4.2V THD+N VS F requency Audio Precision 11/21/17 15:12:07 ColorSweep Trace Line Style Thick Data Axis Comment 1 1 Blue Solid 2 Analyzer.THD+N Ratio A Left vdd=3.8V,8ohm,D类 2 1 Red Solid 2 Analyzer.THD+N Ratio A Left vdd=4.2V,8ohm,D类 0.0001 0.001 0.01 0.1 20k 100 200 500 10k Hz RL=8ohm+33uH Vin=1kHz Po=0.8W VDD=3.8V VDD=4.2V Frequency(Hz) THD+N (%)

Will Semiconductor Ltd. 7 May, 2018 - Rev. 1.0 AGC Audio Precision 11/21/17 16:22:34 ColorSweep Trace Line Style Thick Data Axis Comment Cursor1 Cursor2 1 1 Blue Solid 2 Analyzer.Level A Left *1.203 W *1.326 W 100m 200m 300m 400m 500m 600m 800m 1.2031.326 W 100m 200m 300m 400m 500m 600m 700m 800m 1302m 1.793 Vp dx=1.491 Vp dy=123.3 mW Audio Precision 11/21/17 16:24:44 ColorSweep Trace Line Style Thick Data Axis Comment Cursor1 Cursor2 1 1 Blue Solid 2 Analyzer.Level A Left vdd=4.2V,8ohm,mode2*.9837 W *1.049 W 100m 200m 300m 400m 500m 600m 800m 1.98371.049 W 100m 200m 300m 400m 500m 600m 700m 800m 1274.2m 1.559 Vp dx=1.285 Vp dy=65.27 mW RL=8ohm+33uH Vin=1kHz 4.2V，mode1 RL=8ohm+33uH Vin=1kHz 4.2V，mode2 Audio Precision 11/21/17 16:26:33 ColorSweep Trace Line Style Thick Data Axis Comment Cursor1 Cursor2 1 1 Blue Solid 2 Analyzer.Level A Left *787.2 mW *842.2 mW 100m 200m 300m 400m 500m 600m 800m 787.2m842.2m W 100m 200m 300m 400m 500m 600m 700m 800m 1243.6m 1.371 Vp dx=1.127 Vp dy=54.99 mW Audio Precision 11/21/17 16:28:13 ColorSweep Trace Line Style Thick Data Axis Comment Cursor1 Cursor2 1 1 Blue Solid 2 Analyzer.Level A Left *595.3 mW *603.6 mW 100m 200m 300m 400m 500m 600m 800m 595.3m603.6m W 100m 200m 300m 400m 500m 600m 700m 800m 1211.9m 1.155 Vp dx=.9427 Vp dy=8.299 mW RL=8ohm+33uH Vin=1kHz 4.2V，mode3 RL=8ohm+33uH Vin=1kHz 4.2V，mode4

Will Semiconductor Ltd. 8 May, 2018 - Rev. 1.0 AGC Attack_Time、Release_Time Mode3/Attack_time Mode3/Release_time TSTAT、TSD T_stat T_off

Will Semiconductor Ltd. 10 May, 2018 - Rev. 1.0 Fully Differential Amplifier The WAA2995 features a filter-less modulation scheme that reduces external component count, conserving board space and reducing system cost. With no signal applied, the outputs switch between PVDD and GND with 50% duty cycle, in phase, causing the two outputs to cancel. This cancellation results in no net voltage across the speaker, thus there is no current to the load in the idle state. With an input signal applied, the duty cycle (pulse width) of the Class G output changes. For increasing output voltage, the duty cycle of VOP increases, while the duty cycle of VON decreases. For decreasing output voltages, the converse occurs. The difference between the two pulse widths yields the differential output voltage. The WAA2995 uses a fully differential amplifier with differential inputs and outputs. The differential output voltage equals the differential input multiplied by the amplifier gain. The WAA2995 can also be used with a single-ended input. However, using differential input signals when in a noisy environment, like a wireless handset, ensures maximum system noise rejection. Adaptive Charge Pump Converter The WAA2995 consists of an 1.5X Adaptive Charger-Pump Converter. The converter takes the supply voltage (VDD), and increases it to a higher output voltage (PVDD), which power supply of output stage. The Converter incorporates over voltage protection(OVP) that prevents PVDD exceeding its maximum permitted voltage(typ:5.9V). When the chip normally starts, the charge pump will open, and the PVDD voltage will rise to 1.5*VDD at this time, and the voltage will maintain about 250ms. (see Figure4) During this period: 1. If the Vp of |Vop-Von| is less than 0.7 V, the charge pump will close, and PVDD will be powered by VDD. 2. If the Vp value of |Vop-Von| is greater than 0.7 V, the charge pump will remain open.(For more information, please refer to the Charge-Pump(CP) Boost Converter test item in Electronics Characteristics) This function can reduce the static power consumption and improve the output efficiency of small power

Figure 4. Describes the timing sequence of the adaptive charge pump 2.2μF/10V will help regarding the load regulation and the device’s ability to provide sufficient current drive. pump output impedance. A 4.7uF/10V capacitor is recommended.

Will Semiconductor Ltd. 12 May, 2018 - Rev. Place the input resistors very close to INN/INP pin to limit noise injection on the high-impedance nodes. tube should be placed near the speaker. It is recommended to use ESD9N12BA. Figure 5. Bidirectional TVS tube without Snapback characteristics I/V to close base-band, in order to avoid the coupling noise(see Figure6,Figure7).

Will Semiconductor Ltd. 14 May, 2018 - Rev. 1.0 Package outline dimensions 15-ball WLCSP Package TOP VIEW E D D1 BOTTOM VIEW SIDE VIEW e 15Xφb e A Symbol Dimensions in Millimeters Min. Typ. Min. A 0.54 - 0.61 A1 0.17 - 0.22 A2 0.37 - 0.40 D1 1.20 BSC. E1 1.20 BSC. D 1.58 1.61 1.64 E 1.54 1.57 1.60 e 0.40Typ. b 0.25 0.27 0.29

Will Semiconductor Ltd. 15 May, 2018 - Rev. 1.0 Tape And Reel Information Reel Dimensions Tape Dimensions Quadrant Assignments For PIN1 Orientation In Tape RD Reel Dimension W Overall width of the carrier tape 1 P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant User Direction of Feed Reel Dimensions RD W Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 7inch 13inch 2mm 4mm 8mm 8mm 12mm 16mm