VP0808B NJSEMI | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
Low Cm-Resistance: 2.5 Q Moderate Threshold: -3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Benefits
- Ease in Driving Switches
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Switching
- Easily Driven Without Buffer
Applications
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Power Supply, Converter Circuits Motor Control TO-205AD (TO-39) (Case Drain) VP0808B VP1008B TO-226AA (TO-92) VP0808L VP1008L TO-237 (Tab Drain) VP0808M VP1008M Top View Top View Top View Absolute Maximum Ratings (TA = 25 °C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Tj= 150°C) TA=25°C TA= 100° C Pulsed Drain Current8 Power Dissipation TA=25CC TA= 100°C Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range Symbol VDS VGS ID 'DM PD RthJA RthJC Tj> Tstg VP0808Bb -80 ±20 -0.88 -0.53 6.25 2.5 VP0808L -80 ±30 -0.28 -0.17 0.8 0.32 156 VP0808M -80 ±30 -0.31 -0.20 0.4 125 VP1008Bb 100 ±20 -0.79 -0.53 6.25 2.5 VP1008L -100 ±30 -0.28 -0.17 0.8 0.32 156 VP1008M -100 ±30 -0.31 -0.20 0.4 125 -55 to 150 Unit V A W "C/W Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Quality Semi-Conductors
VP0808B/L/M, VP1008B/L/M Specifications2 Parameter Symbol Test Conditions Typb Limits VP0808B/L/M Min Max VP1008B/L/M Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current0 Drain-Source On-Resistancec Forward Transcoiiductancec Common Source Output Conductancec V(BR)DSS VOS(lh) less loss 'D(on) rDS(on) Efc gos Vos = 0 V, lD = -10|tA VDS = VGS. ID = -' mA VDS = 0 V, VGS = ± 20 V Tj = 125°C VDS = --80V,VGS = OV Tj= 125°C VDS = -100V, VGS = 0 V Tj=125°C VDS = -15 V,VQS = -10 V VGS = -'0 v, ID = -i A Tj= 125°C VDS = -10 V, 1D = -0.5 A VDS = -7-5 v, ID = -o. 1 A -110 -3.4 2.5 4.4 325 0.45 -80 -1.1 200 ^.5 ±100 ±500 -10 500 -100 -1.1 200 -A.5 ±100 ±500 -10 -500 V nA HA A Q mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ciss CGSS crss VDS — 25 v, VGS - 0 V f = 1 MHz 150 150 pF Switching*1 Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = -25 V, RL = 47 Q In ~ -0 5 A VrFN - 10 V RG = 25 Q ns Notes a. TA ^ 25° C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW < 300 us duty cycle < 2%. d. Switching time is essentially independent of operating temperature.