VP1008CSM4 SEME-LAB | Alldatasheet
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Prelim. 9/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VDS Drain – Source Voltage VGS Gate – Source Voltage ID Continuous Drain Current @T A = 25°C @T A = 100°C IDM Pulsed Drain Current 1 PD Power Dissipation @T A = 25°C @T A = 100°C TSTG , TJ Maximum Junction and Storage Temperature Range 100V "30V 300mA 195mA 400W 160W 150°C MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 (0.009)rad. 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) 1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 (0.009)min. 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) P–CHANNEL ENHANCEMENT MODE MOSFET LCC3 PACKAGE Underside View ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate The VP1008CSM4 is a general purpose P-Channel enhancement mode mosfet in a Ceramic Surface Mount package designed for high rel applications:
FEATURES
BVDSS =100V ID = 300mA Hermetic Surface Mount Package Screening Option Available
Prelim. 9/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Characteristic Test Conditions Min. Typ. Max. Unit BV DSS VGS(TH) IGSS IDSS ID(ON) R DS(ON) gfs gos C iss C oss C rss ton toff -110 -100 -34 -2 -45 "100 "500 -10 -500 -2 -11 25 5 43 8 325 200 450 38 60 16 25 71 0 91 0 Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Source Leakage Current Zero Gate Voltage Drain Current On State Drain Current Static Drain – Source On-State Resistance 1 Forward Transconductance 1 Common Source Output Conductance Input capacitance Output capacitance Reverse transfer capacitance Turn–on Time Turn-off Time VGS = 0V I D = -10/G6D A VDS = VGS ID = -1mA VGS = "20V V GS = 0V TJ = 125°C VDS = -100V V GS = 0V TJ = 125°C VDS = -15V V GS = -10V VGS = 10V I D = -1A TJ = 125°C VDS = -10V I D = -0.5A VDS = -7.5V I D = -0.1A VGS = 0V VDS = 25V f = 1MHz VDD = 15V R L = 23/G57 ID = 0.6A R G = 25/G57 VGEN = 10V V nA /G6D A A /G57 mS /G6D S pF ns ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) NOTES: 1) Pulse Test: Pulse Width = 300/G6D s , Duty Cycle /GA3 2% Characteristic Min. Typ. Max. Unit 312.5R /G71 JA Junction – Ambient °C/W THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS