D1053UK SEME-LAB | Alldatasheet
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Technical content
BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 175W 70V ±20V –65 to 150°C 200°C MECHANICAL DATA E K F IJH NM 3 52 4 8 69 7 O (2 pls) C (2 pls) D G A A B B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN – 7.5 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- VHF/UHF COMMUNICATIONS from 400 MHz to 1 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 1.52 0.13 0.060 0.005 B 1.52 0.13 0.060 0.005 C 45° 5° 45° 5° D 16.38 0.26 0.645 0.010 E 6.35 0.13 0.250 0.005 F 18.41 0.13 0.725 0.005 G 12.70 0.26 0.500 0.010 H 5.08 0.13 0.200 0.005 I 24.76 0.13 0.975 0.005 J 1.52 0.13 0.060 0.005 K 0.81R 0.13 0.032R 0.005 M 0.13 0.02 0.005 0.001 N 2.16 0.13 0.085 0.005 O 1.65R 0.13 0.065R 0.005 DB PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 DRAIN 4 PIN 7 GATE 3 PIN 9 GATE 1 PIN 2 DRAIN 1 PIN 4 DRAIN 3 PIN 6 GATE 4 PIN 8 GATE 2
Parameter Test Conditions Min. Typ. Max. Unit 0.8 0.1 7.5 20:1 2.5 VGS = 0 I D = 100mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 1A ID = 10mA V DS = VGS PO = 50W VDS = 28V I DQ = 0.8A f = 1GHz VDS = 0 V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA µA V mhos V dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 1.0°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% TOTAL DEVICE PER SIDE PER SIDE BV DSS IDSS IGSS VGS(th) gfs VGS(th)match G PS η VSWR C iss C oss C rss