VP0808 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
Q Free from secondary breakdown Q Low power drive requirement j Ease of paralleling Q Low CISS and fast switching speeds Q Excellent thermal stability LI Integral Source-Drain diode Q High input impedance and high gain Q Complementary N- and P-channel devices
Applications
Q Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage BV, DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ±30V Operating and Storage Temperature -55°Cto+150°C Soldering Temperature* 300°C "^Distance of 1 .6 mm from case for 10 seconds. SGD TO-92 Note: See Package Outline section for dimensions. fH ij»«f>A
ID (continuous)* -0.28A ID (pulsed) -3A Power Dissipation °c/w 125 °C/W 170 ' ID (continuous) is limited by max rated T. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VQS(th) 'GSS bss ID(ON) RDS<ON) GFS Ciss GOSS CRSS td(ON) 'd(OFF) tf VSD Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Time Fall Time Diode Forward Voltage Drop Min -80 -1.0 -1.1 200 Typ -1.2 Max -4.5 -100 -10 -500 5.0 150 Unit V V nA uA A Q mC5 pF ns V Conditions VGS= 0V, ID =-10|j.A VGS = VDS, lD = -1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = Max Rating TA=125°C VGS = -10V, VDS = -15V VGS = -10V,ID = -1A VDS = -10V, ID = -0.5A VGS = 0V, VDS = '25V f-1MHz VDD = -25V, ID = -0.5A RGEN = 25Q V = 0V I = -0 9A Notes: 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit ov INPUT -10V OV OUTPUT 90% 'd(ON) 'r 90% jf-10% 90% PULSE GENERATOR INPUT