VP0300B VISHAY | Alldatasheet

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Technical content

aw, VPO300B/L/LS, VQ2001U/P

4 Vishay Siliconix

P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number | Vierypss Min (V) | rpsion) Max (2) | Vagithy (V) | DA) | FEATURES BENEFITS APPLICATIONS @ High-Side Switching @ Ease in Driving Switches @ Drivers: Relays, Solenoids, Lamps, © Low On-Resistance: 1.52 © Low Offset (Error) Voltage Hammers, Displays, Memories, Transistors, © Moderate Threshold: —3.1 V @ Low-Voltage Operation ete. © Fast Switching Speed: 17 ns © High-Speed Switching © Battery Operated Systems © Low Input Capacitance: 60 pF —@ Easily Driven Without Buffer © Power Supply, Converter Circuits @ Motor Control TO-205AD (TO-39) TO-226AA Dual-In-Line (Case Drain) (TO-92) To-928 CJ D Ds s s s Pas BE am sab p Gi [al G4 G G NC NC Ge Gs D D s. Ss P P G D ° oF FI De a]: Top View Top View Top View VP0300B VPO300L. VPO300LS Top View Plastic: VQ2001J Sidebraze: VQ2001P ABSOLUTE MAXIMUM RATINGS (T, = 25°C UNLESS OTHERWISE NOTED) v@2001J/P Parameter vpos008 | vPos00L | vPo3ooLs | Single | Total Quad a [exesarceveree ese em | ee a Power Dissipation & fos | Ww a a Sc ‘Operating Junction and o Notes a. Pulse width limited by maximum junction temperature. b. Power dissipation and continuous drain current at Tg = 25°C; Rinuc = 20°C/W. Applications information may also be obtained via FaxBack, request document #70611 Document Number: 70217 www.siliconix.com + FaxBack 408-970-5600 ‘$-58620—Rev. C, 21-Jun-99 1

VPO300B/L/LS, VQ2001J/P A osrn4 Vishay Siliconix Vv SPECIFICATIONS (T, = 25°C UNLESS OTHERWISE NOTED) Limits VPO300B/ULS | VQ2001N/P Parameter Test Conditions Typ? | min | max | min | Max | v a ee Zero Gate Voltage Drain Current Ty= 125°C | {[ [ao[ |=] ‘Ss ‘Common Source Output Conduc- m tance | | Vos= "75 Vilo= 0054 Pes | [| [ |] Dynamic Ip & -1 A, Ven =-10 V Notes a. For DESIGN AID ONLY, not subject to production testing, VPEA03 b. Pulse test: PW <300 us duty cycle 2%. ©. Switching time Is essentially Independent of operating temperature. www.siliconix.com * FaxBack 408-970-5600 Document Number: 70217 2 S-58620—Rev. C, 21-Jun-99

aw, VPO300B/L/LS, VQ2001U/P TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) Output Characteristics Transfer Characteristics - z < Vw = SB 08 {If © —400

6 Y7 |_| 6V 8

Vos — Draln-to-Source Voltage (V) Ves — Gate-to-Source Voltage (V) Capacitance Gate Charge "LTT . Ves=0 V s F N 3 Mt & 100 8 S7 Vps=-24V ANE Et f° foe a os g YY ed se ly B Z ie ee b+} tes TF [| os ae ee ee 8 a S CT-T-4 fit ft 0 5 40 15 2 25 -20 ° 1000 = 2000S 3000 40005000. Vps — Drain-to-Source Voltage (V) Q, — Total Gate Charge (nC) On-Resistance vs. Junction Temperature 40K Source-Drain Diode Forward Voltage rTtiIfll SS 1.50 4a ae 5 138 Ves =-45V J z SSS 2 SSS gt Ip=-05A GY i —— A £ Fy 4 { 5 a ee An) A | Hoa a 8 soo Lf 4 1.05 A A | ee ‘<a a | RS | 07s 71 a | “50-25 0 2 880 75 100 125 150 0 05 -10 415 20 25 30 35 40 Ty—Junction Temperature (_C) Vsp — Source-to-Drain Voltage (V) Document Number: 70217 www.siliconix.com * FaxBack 408-970-5600 ‘S-58620—Rev. C, 21-Jun-99 3

VPO300B/L/LS, VQ2001 J/P A osrn4 Vishay Siliconix 4 TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 40K Threshold Region rs a a A a A A a a ae oe 8 = -———— + 7 FF £ 20 Vl = [100 FF AT i Nam 3 ” Sef ee 16 =—_ g =a a B Ys 1 Lot fF TF S40 ~ Sore SS -——.- — Ff +f ft a a Ye 6 ° ,L LTP Vv fT Tf Vas — Gate-to-Source Voltage (V) Vas — Gate-Source Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature (VP0300B Only) ‘Safe Operating Area (VP0300B Only)

2.0 OE ——— |

a a SS SK | 46 a A OS OO 0 a a < € ited Hee 100 us =. — = Y FDSten) [| d NINO 5 412 s ‘ g ~~ 6 . P=— oes c rs SS ms

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IN ir, To = 25°C [SS SS t00 ns . Pt | | LIN TH IC i ; os ima 0 25 50 75 100 125 150 1 -10 50 To —Case Temperature (°C) Vps — Drain-to-Source Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only) -— SSS [oa Occ 05 =e er re La i a es ce OO a a ye a ee H = ee a | 1 oT Ll = Be tone TT 2 SS rae oe ee HH a SS —_ He BS a 0 ee | th bk] aan a6 Pa | Try ree eee me te iy Bo NS swore BT

3 TT TTT TT a evunteaces snags sere TTT]

0.01 O74 1 10 100 1K 10K ty — Square Wave Pulse Duration (sec) www.siliconix.com * FaxBack 408-970-5600 Document Number: 70217 4 S-58620—Rev. C, 21-Jun-99