VP0104N2 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
, fine. Product Summary P-Channel Enhancement-Mode Vertical DMOS Power FET's BVDSS/ BVDGS -40V -60V -90V RDS(ON (max) 811 an an ID(ON) (mini -Q.5A -0.5 A -0.5 A Order Number /Package TO-39 VP0104N2 VP0106N2 VP0109N2 TO-52 VP0104N9 VP0106N9 VP0109N9 TO-92 VP0104N3 VP0106N3 VP0109IM3 TO-220 VP0104N5 VP0106N5 VP010PN5 Quad P-DIP VP0104N6 VP0106N6 Quad C-DIP VP0104N7 VP0106N7 Dice VP0104ND VP0106ND VP0109ND Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) AVGS(th) IGSS IDSS ID(OIM) RDS(ON) ARDS(ON) GFS Ciss Coss CRSS td(ON) tr td(OFF) tf VSD trr Parameter Drain-to-Source VP0109 Breakdown Voltage VP0106 VP01 04 Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-OlM Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min -90 -60 -40 -1.5 -0.15 -0.50 160 Typ -5.8 -0.25 -1.0 0.55 200 -1.2 400 Max -3.5 -6.5 100 -10 m 1 1.0 B -2.0 Unit V V mV/°C nA MA mA A a %/°c mU pF ns V ns Conditions ID - -imA, VGS = O VGS = VDS. ID = -imA ID = -imA, VGS = VDS VGS = ±20V, VDS^O VGS * 0, VDS » Max Rating VGS = 0, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -iov, VDS = -25v VGS = -sv, ID = -o.i A VGS • 10V, ID = -0,5A ID = -0.5A, VGS = -10V VDS - -25V, ID = -0.5A VGS = O, VDS- -25v, f = 1MHz, VDD = -25V, ID= 1A, RS - 50ft ISD = -2.5A, VGS = o ' ISD = -IA, VGS = O E-Line (TO-92 style) ^ p DIMENSION A B C E F G L MILLIMETRES MIN 0.41 0.41 3,61 4.37 2.16 MAX 0.495 0.495 4.01 4.77 2.41 2.5
1.27 NOM
0.016 0.016 0.142 0.172 0.085 MAX 0 0195 0,0195 0. 158 0.188 0.095 0,098
0.050 NOM
0,550