VN35AK NJSEMI | Alldatasheet

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tSztni-donductoi ^Ptoaueti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 VN35AK, VN66AK, VN67AK, VN98AK, VN99AK n-Channel Enhancement-mode Vertical Power MOSFET

FEATURES

  • High speed, high current switching
  • High gain-bandwidth product
  • Inherently temperature stable
  • Extended safe operating area
  • Simple DC biasing
  • Requires almost zero current drive

APPLICATIONS

  • High current analog switches
  • RF power amplifiers
  • Laser diode pulsers
  • Line drivers
  • Logic buffers
  • Pulse amplifiers ABSOLUTE MAXIMUM RATINGS (TA = 25° C unless otherwise noted) Drain-source Voltage VN35AK 35V VN66AK, VN67AK 60V VN98AK, VN99AK 9QY Drain-gate Voltage VN35AK 35V VN66AK, VN67AK 60V VN98AK. VN99AK 90V Continuous Drain Current (see note 1) 1.2A Peak Drain Current (see note 2) 3.0A Gate-source Forward Voltage , +30V Gate-source Reverse Voltage -30V Thermal Resistance, Junction to Case 20°C/W Continuous Device Dissipation at (or below) 25'C Case Temperature 6.25W Linear Derating Factor 50mW/°C Operating Junction Temperature Range -55 to -H50°C Storage Temperature Range -55 to +150°C Lead Temperature (1/16 in. from case for 10 sec) +300°C Note 1. TC = 25°C; controlled by typical rDS(sn) and maximum power dissipation. Note 2. Pulse width 80Msec, duty cycle 10%. Note 3. The Drain-source diode is an integral part of the MOSFET structure. SCHEMATIC DIAGRAM (OUTLINE DWG. TO-39) DRAIN Q GATE O GATE Body Internally connected to tourc*. Drain common lo C«M. CHIP TOPOGRAPHY Quality Semi-Conductors

VN35AK, VN66AK, VIM67AK, VN98AK, VN99AK ELECTRICAL CHARACTERISTICS! (25°C unless otherwise noted) CHARACTERISTIC __9 T A T C D V N A M C BVosS Drain-Source Breakdown Vosith) Gats-Threshold Voltage IQSS Gate-Body Leakage Zero Gate Voltage Dss Drain Current iD'on' ON-State Drain Current Drain-Source VOSIC"" Saturation Voltage VN66AK VN98AK VN35AK VN67AX VN99AK gt> Forward TransconduCtance C.jj Input Capacitance Common Source Output &>" Capacitance Cru Reverse Transfer Capacitance ton Turn ON Time tq« Turn OFF Time VNWAK Mm 0.0 1.D 170 TVP o.s 100 z.o 1.0 2.2 250 MAX 2.0 100 500 500 2.5 VNMAK VN87AK MIN I 60 0.8 1.0 170 TYP 0.5 100 2.0 1.0 2.2 1.1 250 l_8~l MAX 2.0 100 500 500 3.0 3.5 a VNMAK VNMAK MIN 0.8 1,0 170 TYP 0.5 100 <2JO~ 1.1 I 1.8 2.2 250 MAX 2.0 100 500 soo 4.0 4.5 UNIT V nA, MA nA A V mfl pF ns TEST CONDITIONS Vus = 0, (0 - 10fiA Vos = Vas. lo « 1 mA Vas = 15V. VDS = 0 Vos = 15V. Vos = 0. T* = 125-C (Note 2) Vos = Max. Rating. VGS = 0 Vtis ~ 0.8 Max. Rating, Vos • D. TA = 125°C (Note 2) rvcis • 25V, VGS = o Vps = 25V. VGS = 10V VGS • 5V. ID » 0.3A VGS = 10V, lo = 1.0A Vas = SV. lo - 0.3A Vcs = 10V. ID = 1.0A VDS = 24V, ID = 0.5A, f = 1 KHz VGS • 0, Vos = 24V, f = 1MHz (Note 1) (Note 2) Not* 1. Pulse test — 80ps pulse, TWj duty cycle. Note 2. Sample test. THERMAL RESPONSE POWER DISSIPATION v* CASE OR AMBIENT TEMPERATURE DC SAFE OPERATING REGION Tc = 25°C BREAKDOWN VOLTAGE VARIATION WITH TEMPERATURE T - TEMMBATUKE CO t TO 100 VD5 - OHAIN-TO-SOURCE VOLTAGE (VOLTS! -40-10 0 » 40 60 SO 100 l» 140