VN66 NJSEMI | Alldatasheet

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, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VN66 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER VN66AD VN66AFD V(BR)DSS (V) ros(ON) (n> ID (A) 1.7 1,46 PACKAGE TO-220 TO-Z20SD Performance Curves: VNDQ06 (See Section 7) TO-220/TO-220SD TOP VIEW TO-220

1 GATE

2 & TAB - DRAIN

3 SOURCE

1 SOURCE

2 GATE

3 & TAB - DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)2 PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25°C Tc = WC Pulsed Drain Current1 Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL VDS VQS l ., ID I DM PD Tj. Tstg TL VN66AD ±30 1,7 VN86AFD ±30 1.46 0.92 -55 to 150 300 UNITS V A W THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Case SYMBOL RthJC VN66AD 6.25 VN66AFD 8.3 UNITS "C/W 'Pulse width limited by maximum junction temperature. 2Absolute maximum ratings have been revised. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gato Threshold Voltage Date-Body Leakage Zero Gate Voltage Drain Currant On-State Drain Current^ Drain-Source cm-Resistance' Forward , Transconductanos •* Common Source Output Conductance3 SYMBOL V(8Fl)OSS VGSIM IGSS loss 'o(ON| rDS[ON) 9PS «OS DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance eiss' GSSS c,,, TEST CONDITIONS4 LIMITS TYPa VN664 MIN VOS = OV, I0 = 10.HA VDS = VQS.ID = 1 mA Vns = 0 V V03=±30V T0=125'C VQS = 0 V VQS = 48V T0=125°C VDS = 10 V. VQS = 10 V VQS = 5V. ID = 0.3 A V<jS = 10 V lo = 1A | Tc=125aC V0s = 10 V, I0 = O.S A VDS = 7.5V. 10 = 0.1 A Vos = 25 V VQS = 0 V f = 1 MHz 1.5 ± 1 ± 5 0.05 0.3 1.8 1.8 1.3 2.6 350 1100 0.8 1.5 170 MAX 2.5 ±100 + 500 e so UNIT V nA A ft mS MS PF SWITCHING Turn-On Time Turn-Off Time 1ON »OPF V0o = 25 V, RL=23 ft. ID= 1 A. VQEN= 10V RG- 25 fL (Switching time Is essentially Independent of operating temperature) a 9.5 NOTES: 1. T0 = 25 «C unless otherwise noted. 2. For design aid only, not subject to production testing. 3. Pulse test: PW = 300.us , duty cycle £2%. 4. Data sheet L'mlts and/or test conditions have been revised.