VN67 NJSEMI | Alldatasheet
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tzSztni-Gonauctoi iJ^ioaucts., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VN67 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER VN67AB VN67AD VN67AFD V(BP)OSS (V) ros(ON) <n) 3.5 3.5 3.5 ID (A) 0.79 1.58 1.37 PACKAGE TO-205AD TO-220 TO-220SD TO-205AD (TO-39) BOTTOM VIEW
1 SOURCE
2 GATE
3 DRAIN & CASE
Performance Curves: VNDQ06 (See Section 7) TO-220/TO-220SD TOP VIEW TO-220
1 GATE
2 & TAB - DRAIN
3 SOURCE
3 & TAB - DRAIN 1 23 ABSOLUTE MAXIMUM RATINGS (Tc » 25°C unless otherwise noted)2 PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc= 25°C Tc= 100°C Pulsed Drain Current1 Power Dissipation Tc= 25°C TC = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL VDS VQS ID IDM PD T|. Tstg TL VN67AB ±20 0.79 0.5 VN67AD ±30 1.58 VN67AFD ±30 1,37 0.87 -55 to 150 300 UNITS V A W THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Case SYMBOL RthJC VN67AB VN67AD 6.25 VN67AFD 8.3 UNITS "C/W 'Pulse width limited by maximum Junction temperature
2 Absolute maximum ratings have been revised from previous data sheet
NJ Serni-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS* LIMITS TYP2 VN674 MIN MAX UNIT STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Dra'n Current On-State Drain Current* Drain-Source On-Re*!stanoe3 Forward a Transconductance Common Source Output Conductance3 V(BR)DSS Vos(th) IQSS loss ID ros(ON) OFS Oos VQS -0 V. |Q« 10 MA Vos " VQS . 1 o VD8 = 0 V w Vos = M \\DS»48\\ 1 mA T0= 125'C t f. T0= 125° C VDS • 10 V, VQ8 = 10 V Vas'SV. ID = 0.3 A VQS = 10 V Vos = 10V, ID To- 125«C = 0.5 A VDg = 7.5 V, ID = 0.1 A 1.5 L_+_!_ ± s 0,05 0.3 1.8 1.8 1.3 2.S 350 1100 0.8 1.5 170 2.6 ±100 ±600 500 3,5 V nA MA A mS
- US DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance C,,, Cos, Cr.. VOS = 2S V VQS = 0 V f = 1 MHz PF SWITCHING Turn-On Time Turn-on Time toN 'OFF VDD = 25V. BL=23il lo = 1A, VQEN= 1ov, RQ=25jCl (Switching time Is essentially Independent of operating temperature) 9.5 IS ns NOTES: 1. TO = 25 °O unlese otherwise noted. 2. For design aid only, not subject to product 3. Pulse test; PW = 300JU , duty cycle S2%. 4. Data sheet limits and/or test conditions ha iduotlon testing, inditlons have been revised.