VN30AB NJSEMI | Alldatasheet
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, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VN3OAB, VN35AB, VN67AB, VN89AB, VN90AB n-Channel Enhancement-mode Vertical Power MOSFET
FEATURES
- High speed, high current switching
- Current sharing capability when paralleled
- Directly Interface to CMOS, DTL, TTL. logic
- Simple DC biasing
- Extended safe operating area
- Inherently temperature stable
APPLICATIONS
- Switching power supplies
- DC to DC inverters
- CMOS and TTL to high current Interface 1 • Line drivers
- Logic buffers
- Pulse amplifiers ABSOLUTE MAXIMUM RATINGS (TA = 25° C unless otherwise noted) Drain-source Voltage VN30AB. VN35AB 35V VIM67A8 50V VN89AB 80V VN90AB 90V Drain-gate Voltage VN30AB, VN35AB 35V VN67AB 60V VN89AB 80V VN9QAB 90V Continuous Drain Current (see note 1) 1.2A Peak Drain Current (see note 2} 3.0A Continuous Forward Gate Current 2.0mA Peak-gate Forward Current 100mA Peak-gate Reverse Current 100mA Gate-source Forward (Zener) Voltage +15V Gate-source Reverse (Zener) Voltage. -0.3V Thermal Resistance, Junction to Case 20°C/W Continuous Device Dissipation at (or below) 25°C Case Temperature 6.25W Linear Derating Factor 50mW/°C Operating Junction Temperature Range -55 to +150°C Storage Temperature Range -55 to +150°C Lead Temperature (1/16 in. from case for 10 sec) +300°C Note 1. Tc = 25°C; controlled by typical rosion) and maximum power dissipation. Not* 2. Pulse width 80/*sec, duty cycle 1.0%, Not* 3. The Drain-source diode is an integral part of the MOSFET structure. SCHEMATIC DIAGRAM (OUTLINE DWG. To-39) DRAIN o GATEO SOURCC Body Internally connected to source. Drain common to caie. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
VN30AB, VN35AB, VM67AB, VN89AB, VN9OAB ELECTRICAL CHARACTERISTICS (25"C unless otherwise noted) "z~ T e B it" A T c D V N A M C CHAAACTMISTtC BVoss Drain Source Breakdown Voslif. > One Thruhold Votl»o« loss Gate-Body Leakage Zero Gate Voltage 'oss „ Drain Current Drain-Source ON-Stit* *'""" fi«,,tanc. (Note 1) ON Slate Drain Current l0""-' (Not.1, gfs Forward Transconductance Cm Input Capacitance (Note 2) Reverse Transfer '" Capacitance (Note 2) Common Source Output COM Capacitance (Note 2) tor, Turn-ON Time (Note it ton Turn-OFF Time (Now 2) VNMAB KIN 0*' 1.0 TTP 1,2 0.01 2.0 250 i t MAX 0.5 6.0 5.0 JO VNttAB URN 0.8 1.0 TTP 1.2 001 250 MAX k 0.5 4.5 2.5 r so VNtTA* MIN o.a 1.0 TYP 1.2 0.01 2.2 250 MAX r o.s 5.1 3.5 SO VMWAB MIN 0.8 1.0 TYP 0-01 :>2 2.0 250 MAX 5.1 4.5 VMMAt MIN 0.8 1.0 TVP 1.2 0.01 250 MAX OS e.o 5.0 UNIT V CA A mfl pF ns TEST CONDITIONS Id = 10|*A. V3S " 0 lo • 1 OmA, VDS • VGS Vos = inv, vtis = o VOS - 2SV, VB5 - 0 Vos = sv. ID • 300mA Vos= 10V, ID- l.OA Vos = 2SV, V.J5 - 10V Vos = 25V. Ip = 0.5A Vos = 0, VDS = S4V, t = 1 -OMBZ Natal. Pul» Tmt — Sample Test. ii. 1H duty cycle. THERMAL RESPONSE t, - TIME (mi«) POWER DISSIPATION vs CASE OR AMBIENT TEMPERATURE 0 *40 +W + 120 *Wfl 4-200 T - TEMPERATURE CO DC SAFE OPERATING REGION Tc = 25°C 1 10 100 VDS - OR AIM TO SOURCE VOLTAGE (VOLTS) BREAKDOWN VOLTAGE VARIATION WITH TEMPERATURE Q S 1.1 -40 -20 0 26 40 *0 M 100 120140 TEMP(RATUt|C - 'C