VN2406 NJSEMI | Alldatasheet
Document overview
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Technical content
Features
L) Free from secondary breakdown LI Low power drive requirement Q Ease of paralleling LI Low C|SS and fast switching speeds Q Excellent thermal stability LI Integral Source-Drain diode LI High input impedance and high gain Q Complementary N- and P-channel devices
Applications
U Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Package Option BV, DSS Drain-to-Gate Voltage BV, DCS Gate-to-Source Voltage ±20V Operating and Storage Temperature -55°Cto+150°C Soldering Temperature* 300°C ' Distance of 1.6 mm from case for 10 seconds. SGD TO-92 Note: See Package Outline section for dimensions. Quality Semi-Conductors
ID (continuous)* 0.9A ID (pulsed) 5.0A Power Dissipation @ Tc = 25°C LOW °c/w 125 <*• °c/w 170 "DR* 0.1 8A 'DRM 1.7A , (continuous) is limited by max rated T.. Electrical Characteristics (@ 25 C unless otherwise specified) Symbol BVDSS ^GS(th) 'GSS IDSS 'o(ON) ^DS(ON) Af^DSfON) GFS GISS CQSS C-RSS *d(ON) tr ld(OFF) VSD Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance All VN2410 VN2406 Change in RDS<ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop VN2410 VN2406 Min 240 0.8 1.0 300 Typ 1.0 1.2 1.2 Max 100 500 1.4 125 Unit V V nA HA A Q %/°C me? pF ns V V Conditions VGS = OV, ID = 0.1mA VGS = VDS, !D=1mA VGS = 20V, VDS = 0V VGS = OV,VDS=120V VGS = OV,VDS = 120V TA = 125°C VGS = -10V,VDS = 15V VGS = 2.5V, ID = 0.1 A VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A VGS=10V, ID = 0.55A VDS = 10V, ID = 0.5A VGS = 0V, VDS = 25V f 1 MM? VDD = 60V I C\\A RGEN = 25Q VGS = OV, ISD = 0.19A VGS = 0V, ISD = 0.8A Notes: 1 . All D.C. parameters 100% 2. All A.C. parameters sampl Switching W 10V INPUT VDD tested at 25°C unless otherwise stated. (Pu 3 tested. aveforms and Tes *{QN) td(ON} V 1 Tr 10%-V OUTPUT \\V 90% ^ f 90% '(OFF) 'd(OFF) tF -90° se test: 300|is pulse, 2% duty cycle.) t Circuit v°o < RL PULSE f> GENERATOR > "gen / | 1 A A A / i 4- © ^^ ho% T INPUT _|_ > OUTPUT D.U.T.