VN1310 NJSEMI | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low C|SS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

Applications

Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Package Options BV, DSS Drain-to-Gate Voltage BV, DOS Gate-to-Source Voltage ±20V Operating and Storage Temperature -55°Cto+150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds.

  • "> - .«. TO-39 Case: DRAIN SOD TO-92 Note: See Package Outline section for dimensions.

ID (continuous)* 0.4A 0.25A ID (pulsed) 1.4A 1.3A Power Dissipation @ Tc = 25°C 3.0W LOW °c/w 125 °c/w 125 170 'DR* 0.4A 0.25A 'DRM 1.4A 1.3A ' ID (continuous) is limited by max rated Tj Electrical Characteristics (@ 25 C unless otherwise specified) Symbol BVDSS VoS(th) AVGS(th) IGSS IDSS 'D(ON) RDS<ON) ARoS(ON) GFS GISS CQSS CRSS td(ON) tr td(OFF) tf VSD trr Parameter Drain-to-Source VN1310 Breakdown Voltage VN1306 VN1304 Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDSJON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capactance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min 100 0.8 0.25 0.50 120 Typ -3.9 0.6 1.4 5.0 5.0 0.8 1.0 350 Max 2.4 -5.0 100 100 8.0 1.3 Unit V V mV/°C nA MA uA A fj %/°c mU pF ns V ns Conditions VGS = 0V, ID = 1 mA VGS = VDS, ID = 1mA VGs = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA=125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 500mA VGS = 0V, VDS = 25V f - 1 MHz VDD = 25V I - ^nnmA RGEN = 25H VGS = 0V. ISD = 0.5A VGS = 0V. ISD = 0.5A Notes: 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT OUTPUT 10%, '(ON) 'd(ON) 'r 1 I 10%-* 90% ^ <C90% *d(OFF) -90" PULSE <; GENERATOR ^ R / gen / | 1 i AAAy I I- (n\\ (Jl) x- Ho% T INPUT _L •= 4 , OUTPUT D.U.T.