VN2222KM NJSEMI | Alldatasheet
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U I/ roaucti, One.. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 USA VN2222KM TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Enhancement Mode MOSPOWER
APPLICATIONS
- Switching Regulators
- Converters
- Motor Drivers PRODUCT SUMMARY PIN 1 - Source PIN 2 - Gate PIN 3 & TAB - Drain TO-237 Part Number VN10KM VN2222KM BVDSS Volts rDS(ON) (ohms) 7.5 Package TO- 237 TO- 237 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) Parameter VDS VDGR ID@TC = 25° C ID@TC = 100° c 'DM VGS PD PD Junction to Case Junction to Ambient Tj Tstg Lead Temperature Drain-Source Voltage Drain-Gate Voltage (RQS = 1 Mn> Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Gate-Source Voltage Max Continuous Power Dissipation Max Pulse^ Power Dissipation Linear Derating Factor Linear Derating Factor Operating and Storage Temperature Range 11 /1 6" from case for 1 0 sees.} VN10KM ±0.3 ±0.2 + 15, -0.3 3.9 0.031 0.008 -55 To +150 300 VN2222KM ±0.25 ±0.16 + 15, -0.3 3.9 0.031 0.008 -55 To +150 300 Units V V A A A V W W/° C W/° C ° C ° c
1 Pulse Test: Pulsewidth < 300Msec, Duty Cycle < 2%
2 1 Sec Continuous Power Single Pulse <IK • 4.8 3.2 5 2.4 1.6 0.8 Power Derating 32°C/W 0 25 50 75 100 125 150 175 Tc - CASE TEMPERATURE (°C)
ELECTRICAL CHARACTERISTICS (Tc - 25° C unless otherwise noted) STATIC Parameter B^DSS Drain-Source Breakdown Voltage ^GS(lh) Gate-Threshold Voltage 'GSSF Gate-Body Leakage Forward 'OSS Zero Gate Voltage Drain Current 'D(on) On-State Drain Current^ vDS(on) Static Drain-Source On-State Voltage1 R0S(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 Type All VN10KM VN2222KM All All All All VN10KM VN2222KM All VN10KM VN2222KM VN10KM VN2222KM Min. 0.8 0.6 0.75 Typ. 120 1.5 1.5 0.1 1.5 1.2 7.2 10.8 Max. 2.5 2.5 100 1.5 2.5 3.75 7.5 7.5 13.5 Units V V nA A V V n n n n Test Conditions vGS = ° ID = 100 MA VDS = VGS. ID =1 mA VGS = 15V,VDS = 0 VDS=45V ,VGS=0 VDS^2VDS(ON), VGS = 10V vGS = 5v ,iD=°-2A VGS = IOV ,iD = °-5A VGS = 5V , ID = 0.2A VGS=10V , |D=0.5A VGS =10V. ID =°-5A. TC =125°C VGS=10V, ID-0.5A, Tc=125rC DYNAMIC gfs Forward Transductance^ Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance tQjsj Turn-On Time ime tQFF Turn-Off Time Time All All All All All All 100 200 mS pF pF pF ns ns ns ns VDS>2VDS(ON),ID = 0.5A VGs-0 ,Vos-25v f - 1 MHz VDD=15V ,|Ds 0.6A Rg = 25fi , RL = 23n (MOSFET switching times are essentially independent of operating temperature.} THERMAL RESISTANCE FithJC Junction-to-Case RthJA Junction-to-Ambient All All 125 °C/W °C/W Free Air Operation BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Ig Continuous Source Current (Body Diodel ISM Source Current' (Body Diode) VSD Diode Forward Voltage1 VN10KM VN2222KM All VN10KM VN2222KM -0.85 -0.85 -0.3 -0.25 A A A V V Modified MOSPOWER symbol showing the integral P-N Junction rectifier TC=25°C, IS=-0.3A, VGS = 0 TC=25°C, IS=-0.25A, VGS = 0