VN0610L TEMIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
siticonix VN0610L, VN10KE/KM, VN2222L a ay a N-Channel Enhancement-Mode MOS Transistors ——— $e Ore Zener Gate Protected Product Summary Veompss Min. (V)__| epson Max (@) | Vesam (¥) Tp @) ‘VN10KE 5 @ Vos = 10V 0.8 to 2.5 ‘VN10KM 5 @ Ves = 10V. 0.8 to 2.5 Features Benefits Applications © Zener Diode Input Protected © Extra ESD Protection ‘© Drivers: Relays, Solenoids, Lamps, Hammers, © Low On-Resistance: 3Q ‘© Low Offset Voltage Displays, Memories, Transistors, etc. © Ultralow Threshold: 1.2V ‘® Low-Voltage Operation © Battery Operated Systems © Low Input Capacitance: 38 pF © High-Speed, Easily Driven © Solid-State Relays ‘© Low Input and Output Leakage © Low Error Voltage © Inductive Load Drivers To.205ac (10-92) (lab Drain) Ss s Ss D (27 D G D ‘Top View Top View ‘Top View NostoL VNIOKE VNIOKM N22 E Absolute Maximum Ratings (T, = 25°C Unless Otherwise Noted) [erences Tmt [rns [vane [wwiooe [wana Poa] § a I ; " a Jemoronscmcn=o me —| © afar e ta A i [Passed Drain Current) toe a Ss i [Marimum Junction to-Ambient Raa [6 [oo [sss | [Operating Junction andStorage Rmperatwre Range Thay [SC StosD—SSCSCSC*iSC_C Notes a. Pulse width limited by maximum junction temperature,
VN0610L, VNLOKE/KM, VN2222L Siliconix SINUORU Dy MINEUBSEI BNE) VNSLEEN Siliconix Specifications* . aes [FEE | | VNIOKE ‘VN10KM. (VN2222L_ LT Poacsotmsin wien [Vonae | vorown-inm [to [To] |. [eseticnoatome | Yoxwy | vorsvonioe tea [va [os | a3 [os [= | a [Sasaebancarer | om | __ Ya Wvesmov [+ fos | fom Ta | [__ve=svipnora fe [fs [3 | Drain-Source On-Resstance® msn) Vos 10 Vilp=05A fs [ [sf] [75] [a=are pee es [Foreataacmiawe® [me | vos=l0wipnosa [00 ao | [100 || [CenmonScureeOuipuConicmaee | am | Vos=75Vio=0ma fort | | |__| [isewcapctawse |_| l=] Jo] To] Vos=2WVos=owt= iam [6 [fas [| ; ee ae a a [mmontine | | vpaesvymesa [7] [| |» | [xortine [tom] 08 Varn = town masa [>To [P| an = 25°C unless otherwise noted. 7 7 ‘VNDPOS b, For DESIGN AID ONLY, not subject to production testing. d. Switching time is essentially independent of operating temperature. -
siticonix VN0610L, VN10KE/KM, VN2222L Typical Characteristics (25°C Unless Otherwise Noted) 0 i . to anna ea PAA. er JJf2cee (Lge > Pos Tr fly an FR | ary 04 08 12 16 20 °O “4 ° 2 3 4 s Vps ~ Drain-to-Source Voltage (V) ps ~ Drain-to-Source Voltage (V) os ‘Transfer Characteristics 7 + al es Wis n\\n ey 4 io Nee “OAT EERE ‘Vas ~ Gate-Source Voltage (V) Vas ~ Gate-Source Voltage (V) ee con Peer Reoee Recess Pit | Ty °o 02 04 06 08 10 o% -50 -10 30 70 110 150 - Ip — Drain Current (A) ‘Ty — Junction Temperature (°C)
VN0610L, VNIOKE/KM, VN2222L Siticonix Typical Characteristics (25°C Unless Otherwise Noted) (Cont’d) 10 ___ Region 100 Capacitance =< ee \\ time | | [| = es a AY A A) A 80 (Come =f) ] ] i Seopa ie a aw i eee ; peta ike l | =a <5 = = 2 LSS | ff aw] ——— wT NN er 0 025 O05. 075 10 125 15 1.75 0 10 20 30 40 50 Vas ~ Gate-to-Source Voltage (V) Vps ~ Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 150 210 SS SE P=| TY Sut, eae 3 ios NA eee PEOSAA Nee TT ALL DC SS Sass 8 so JA . SS 2s A ——— SS vt tt tt (es Oo 100 200 300 400 500 600 01 Os 10
1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) _
4 = 1 I cumssia eet ait uote ; TT tH Nee | aa See i Fi q ha —e A zl, ri] Fae a TTT payoxte, = = HH Ea a eT we setnll LTTE EET T I ill ty ~ Square Wave Pulse Duration (sec)