VN10KE SEME-LAB | Alldatasheet
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Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourage s customers to verify that datasheets are current before placing orders. Semelab Limit Semelab Limit Semelab Limit Semelab Limited ed ed ed Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 1 of 3 VN10KE
- Low R DS(on) , V GS(th) , C ISS And Fast Switching Speeds
- Hermetic TO-52 Metal package.
- Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications
- Screening Options Available ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage +15V, -0.3V ID Continuous Drain Current TA = 25°C 0.17A TA = 100°C 0.11A IDM Pulsed Drain Current (1) 1.0A PD Total Power Dissipation at TA = 25°C 312.5mW Derate Above 25°C 2.5mW/°C TJ Operating Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units Rθ JA Thermal Resistance, Junction To Ambient 400 °C/W Notes Notes Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature
Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 2 of 3 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 I D = 100µA 60 V VGS(th) Gate Threshold Voltage VDS = V GS I D = 1.0mA 0.8 2.5 V IGSS Gate-Source Leakage Current VGS = 15V V DS = 0V 100 nA VDS = 48V V GS = 0 10 IDSS Zero Gate Voltage Drain Current TJ = 125°C 500 µA ID(ON) (2) On-State Drain Current VDS = 10V V GS = 10V 0.75 A VGS = 5V I D = 0.2A 7.5 VGS = 10V I D = 0.5A 5 RDS(on) (2) Static Drain-Source On-State Resistance TJ = 125°C 9 Ω gfs (2) Forward Transconductance VDS = 10V I D = 0.5A 100 gos (2) Common Source Output Conductance VDS = 7.5V I D = 50mA 0.2 m/uni01B1 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 60 Coss Output Capacitance VDS = 25V 25 Crss Reverse Transfer Capacitance f = 1.0MHz 5 pF td(on) Turn-On Delay Time VDD = 15V, RL= 23 Ω, R G = 50 Ω 10 td(off) Turn-Off Delay Time ID = 1.0A, V GEN = 10V 10 ns Notes Notes Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 3 of 3 MECHANICAL DATA Dimensions in mm (inches) 2.54 (0.100) Nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) m i n 3.81 (0.150) 2.93 (0.115) 12.7 (0.500) min. TO -52 PACKAGE (TO -20 6AC) Underside View Pin 1 - Source Pin 2 - Gate Pin 3 - Case & Drain