VN0655_15 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low C!SS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain
Applications
Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options SG D TO-92 TO-220 TAB: DRAIN Absolute Maximum Ratings Drain-to-Source Voltage BVn Drain-to-Gate Voltage BV, DCS Gate-to-Source Voltage + 20V Operating and Storage Temperature Soldering Temperature* -55°C to+150°C 300°C * Distance of 1.6 mm from case for 10 seconds. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ID (continuous)* 0.1 5A 0.75A ID (pulsed) 0.5A 1.5A Power Dissipation @ Tc = 25°C 45W eic °C/W 125 °C/W 170 IDR* 0.15A 0.75A 'DRM 0.5A 1.5A ID (continuous) is limited by max rated Ti. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS "fiS(th) AVQS(th) 'GSS 'DSS 'o(ON) ^DS(ON) ARoS(QN) GFS C|SS CQSS CRSS 'd(ON) tr td(OFF) VSD V Parameter Drain-to-Source VN0660 Breakdown Voltage VN0655 Gate Threshold Voltage Change in VGS(th^ with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) witn Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min 600 550 0.25 Typ 0.8 1.0 300 Max -4.5 100 0.75 130 1.8 Unit V V mV/°C nA uA mA A %/°C my pF ns V ns Conditions V_0 = 0V, L = 2mA Cab D VGS=VDS,lD = 2mA VGS=VDS,lD = 2mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA=125°C VGS = 5V, VDS = 25V VGS=10V,VDS = 25V VGS = 5V, ID = 100mA VGS= 10V, ID= 100mA VGS = 10V, ID= 100mA VDS = 25V, ID= 100mA V r\\\\i \\i oc:\\ GS - UV, VDS - tibV f- 1 MH2 VDD = 25V, I f» 9c;A RncM - 25Q VGS = OV, ISD= 100mA VGS = °V, ISD= 100mA Notes: 1 . All D.C. 2. Ah A.C. parameters 1 00% tested at 25°C unless otherwise stated. (Pulse test: SOOus pulse, 2% duty cycle.) parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT OUTPUT 10%-,' L(ON) ld(ON) lr 10%' 90% ^t 90% '(OFF) 'd(OFF) *F 10% df- 90% PULSE GENERATOR INPUT OUTPUT D.U.T.