VN0610LL NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VN0610LL/VN10LM
FEATURES
- Low ros(on) <5Q.
APPLICATIONS
- Switching
- Amplification
ORDERING INFORMATION
VN0610LL Plastic TO-92 -55°C to+150°C VN1OLM Plastic TO-237 -55°C to +150°C For sorted chips in carriers see 2N7000 PIN CONNECTIONS CDS BOTTOM VIEW TO-92 (TO-226AA) \\ 2 3, 1. SOURCE 2. GATE 3. DRAIN BOTTOM VIEW TO-237 1. SOURCE 2. GATE 3. TAB-DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL VDS VGS ID IDM PD Tj, Tstg TL PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 1 00°C Pulsed Drain Current1 Power Dissipation TA = 25°C TA = 100°C Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) LIMITS VN0610LL ±30 0.28 0.17 1.3 0.8 0.32 VN10LM ±30 0.32 0.2 1.4 1.0 0.4 -55 to 150 300 UNITS V A W THERMAL RESISTANCE RATINGS SYMBOL RthJA THERMAL RESISTANCE Junction-to-Ambient LIMITS VN0610LL 156 VN10LM 125 UNITS K/W 1 Pulse width limited by maximum junction temperature. Quality Semi-Conductors
V(BR)DSS VGS(th) loss loss lD(ON) ros(ON) grs gos DYNAMIC Ciss Coss Crss PARAMETER LIMITS TYPb MIN MAX UNIT TEST CONDITIONS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentd Drain-Source On-Resistancec Forward Transconductance0 Common Source Output Conductance0 Input Capacitance Output Capacitance Reverse Transfer Capacitance 2.3 1000 2.5 4.4 230 500 0.8 750 100 2.5 ±100 500 7.5 V nA uA mA n mS pF lo= 100(iA, VGS = OV VDS = VGS, ID = 1mA VGs = ±30V, VDS = 0V VDS = 50V, VGS = 0V Tj=125°C VDS = 10V, VGS = 10V VGS = 5V, lo = 0.2A VGS = 10V, ID = 0.5A Tj = 125°C VDS = 10V, ID = 0.5A VDS = 5V, ID = 50mA VDS = 25V, VGS = 0V, f = 1 MHz SWITCHING toN tOFF Turn-On Time Turn-Off Time ns VDD = 15V, RL = 23O, ID = 0.6A VGEN=10V, RG = 25Q (Switching time is essentially independent of operating temperature) Notes: a. TA = 25°C unless otherwise noted. b. For design aid only, not subject to production testing. c. Pulse test; PW = <300nS, duty cycle <2%. d. Pulse width limited by maximum junction temperature.