VN0605T CALOGIC | Alldatasheet

Document overview

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Technical content

N-Channel Enhancement-Mode MOS Transistor VN0605T

FEATURES

  • • Low rDS(on) <5Ω
  • • Low cost

APPLICATIONS

  • • Switching
  • • Amplification

ORDERING INFORMATION

Part Package Temperature Range VN0605T Surface Mount SOT-23 -55 oC to +150oC For sorted chips in carriers see 2N7000 CORPORATION PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±30 ID Continuous Drain Current TA = 25oC0 . 1 8 ATA = 100oC 0.11 IDM Pulsed Drain Current1 0.72 PD Power Dissipation TA = 25oC0 . 3 6 W TA = 100oC0 . 1 4 TJ Operating Junction Temperature Range -55 to 150 oCTstg Storage Temperature Range -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) 300 THERMAL RESISTANCE RATINGS SYMBOL THERMAL RESISTANCE LIMITS UNITS R thJA Junction-to-Ambient 350 K/W 1Pulse width limited by maximum junction temperature. SOT-23 D S G PRODUCT MARKING VN0605T V05 TOP VIEW CD5

1 DRAIN

2 SOURCE

3 GATE

SYMBOL PARAMETER TYP b MIN MAX UNIT TEST CONDITIONS STATIC V (BR)DSS Drain-Source Breakdown Voltage 70 60 V ID = 10µA, VGS = 0V VGS(th) Gate-Threshold Voltage 2.3 0.8 3.0 V DS = VGS , ID = 1mA IGSS Gate-Body Leakage ±100 nA VGS = ±20V, VDS = 0V ±500 T J = 125oC IDSS Zero Gate Voltage Drain Current µA VDS = 50V, VGS = 0V

500 T J = 125oC

ID(ON) On-State Drain Currentc 700 500 mA V DS = 10V, VGS = 10V rDS(ON) Drain-Source On-Resistancec 4.5 7.5 Ω VGS = 4.5V, ID = 50mA 35 V GS = 10V, ID = 0.5A 5.5 10 T J = 125oC gFS Forward Transconductancec 180 80 mS V DS = 10V, ID = 0.2A gOS Common Source Output Conductancec 500 µSV DS = 50V, ID = 50mA DYNAMIC C iss Input Capacitance 16 60 pF V DS = 25V, VGS = 0V, f = 1MHzC oss Output Capacitance 11 25 C rss Reverse Transfer Capacitance 2 5 SWITCHING tON Turn-On Time 7 20 ns VDD = 30V, RL = 150Ω , ID = 0.2A VGEN = 10V, RG = 25Ω tOFF Turn-Off Time 11 20 (Switching time is essentially independent of operating temperature) Notes: a. TA = 25oC unless otherwise noted. b. For design aid only, not subject to production testing. c. Pulse test; PW = ≤300µS, duty cycle ≤2%.