VN05HSP STMICROELECTRONICS | Alldatasheet
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HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA May 1997 PowerSO-10 BLOCK DIAGRAM TYPE V DSS R DS(on )I OUT V CC VN05HSP 45 V 0.18 Ω 12 A 36 V n OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25oC n 5V LOGIC LEVEL COMPATIBLE INPUT n THERMAL SHUT-DOWN n UNDER VOLTAGE SHUT-DOWN n OPEN DRAIN DIAGNOSTIC OUTPUT n VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status.
Symbol Parameter Value Unit V (BR)DSS Drain-Source Breakdown Voltage Internally Clamped V IOUT Output Current (cont.) 12 A IR Reverse Output Current -12 A IIN Input Current ±10 mA VCC Supply Voltage (continuous) 40 V V CC Supply Voltage (pulsed) 60 V -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA VESD Electrostatic Discharge (1.5 kΩ , 100 pF) 2000 V P tot Power Dissipation at Tc ≤ 25 oC 52 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC ERB Power Mos Avalanche Energy 350 mJ CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS VN05HSP
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.4 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40≤ Tj≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit V CC Supply Voltage see note 1 5.5 13 36 V R on On State Resistance I OUT =6A IOUT =6A T j =2 5 oC 0.18 0.36 Ω Ω IS Supply Current Off State T j ≥ 25 oC On State µA mA V Clamp V CC -V OUT IOUT = 6 A 4 04 55 5 V SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µsT j =2 5 oC 15 µs tr Rise Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µsT j =2 5 oC 30 µs td(off) Turn-off Delay Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µsT j =2 5 oC 20 µs tf Fall Time Of Output Current IOUT = 6 A Resistive Load Input Rise Time < 0.1µsT j =2 5 oC 10 µs (di/dt)on Turn-on Current Slope IOUT =6A IOUT =I OV 25 ≤ Tj ≤ 140 oC 0.5 A/µ s A/µ s (di/dt)off Turn-off Current Slope IOUT =6A IOUT =I OV 25 ≤ Tj ≤ 140 oC A/µ s A/µ s Vdemag Inductive Load Clamp Voltage IOUT = 6 A L = 1 mH -7 -4 -2 V LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V IL Input Low Level Voltage 0.8 V V IH Input High Level Voltage 2( * ) V V I(hyst.) Input Hysteresis Voltage 0.5 V IIN Input Current V IN =5V 5 0 µA V ICL Input Clamp Voltage I IN =1 0 m A IIN =- 1 0m A -0.7 V V VN05HSP
ELECTRICAL CHARACTERISTICS (Continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT (•) Status Voltage Output Low ISTAT =1 . 6m A 0 . 4 v V USD Under Voltage Shut Down 5.5 V V SCL (•) Status Clamp Voltage I STAT =1 0 m A ISTAT =- 1 0m A -0.7 V V IOV Over Current R LOAD <1 0m Ω 20 A IAV Average Current in Short Circuit R LOAD <1 0m Ω Tc =8 5 oC 1.4 A IOL Open Load Current Level 5 180 mA TTSD Termal Shut-Down Temperature 140 oC TR Reset Temperature 125 oC (*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not exceed10 mA at the input pin. (•) Status determinaion> 100µs after the switching edge. Note 1: Above V CC = 36V the output voltageis clamped to 36V. Power dissipation increasesand the device turns off it junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above V CC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature . PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,V IH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of V IH,V IL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN05HSP
DIM. mm inch A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e 1.27 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 h 0.50 0.002 L 1.20 1.80 0.047 0.071 q 1.70 0.067 α 0 o 8o DETAIL ”A” PLANE SEATING α L F h A D D1== 0.10 A E1E3 C Q A B B DETAIL ”A” SEA TING PLANE 610 eB HE M0.25 0068039-C PowerSO-10 MECHANICAL DATA VN05HSP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelec tronics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previous ly supplied. SGS-THOMSONMicroelec tronics products are not authorized for use as critical component s in life support devices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics . 1997 SGS-THOMSON Microelectr onics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelec tronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea- Malaysia - Malta - Morocco - The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A VN05HSP