VEC2801 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • The best suited for DC / DC converter.
  • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET]
  • Low ON-resistance.
  • 1.8V drive. [SBD]
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS - -12 V Gate-to-Source Voltage V GSS ±8V Drain Current (DC) I D -- 3 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -12 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 15 V Nonrepetitive Peak Reverse Surge Voltage V RSM 15 V Average Output Current I O 1A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Marking : BL Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 61009PE MS IM TC-00001990

No.9078-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID= - -1mA, VGS=0 - -12 V Zero-Gate Voltage Drain Current I DSS VDS= - -12V, VGS=0 - -1 μA Gate-to-Source Leakage Current I GSS VGS=±6.4V, VDS=0 ±10 μA Cutoff Voltage V GS(off) V DS= - -6V, ID= - -1mA - -0.3 - -1.3 V Forward Transfer Admittance ⏐yfs⏐ VDS= - -6V, ID= - -1.5A 4.2 6 S RDS(on)1 I D= - -3A, VGS= - -4.5V 47 62 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 I D= - -1.5A, VGS= - -2.5V 64 89 m Ω RDS(on)3 I D= - -0.3A, VGS= - -1.8V 85 122 m Ω Input Capacitance Ciss V DS= - -6V, f=1MHz 940 pF Output Capacitance Coss V DS= - -6V, f=1MHz 230 pF Reverse Transfer Capacitance Crss V DS= - -6V, f=1MHz 180 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 14 ns Rise Time t r See specified Test Circuit. 84 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 104 ns Fall Time t f See specified Test Circuit. 106 ns Total Gate Charge Qg V DS= - -6V, VGS= - -4.5V, ID= - -3A 11 nC Gate-to-Source Charge Qgs V DS= - -6V, VGS= - -4.5V, ID= - -3A 1.6 nC Gate-to-Drain “Miller” Charge Qgd V DS= - -6V, VGS= - -4.5V, ID= - -3A 2.8 nC Diode Forward Voltage V SD IS= - -3A, VGS=0 - -0.85 - -1.2 V [SBD] Reverse Voltage V R IR=1mA 15 V Forward Voltage V F IF=1A 0.35 0.45 V Reverse Current I R VR=6V 500 μA Interterminal Capacitance C V R=10V, f=1MHz 45 pF Reverse Recovery Time t rr IF=IR=100mA, See specified Test Circuit. 15 ns Thermal Resistance Rth(j-a) Mounted on a ceramic board (900mm2✕0.8mm) 70 °C / W Package Dimensions Electrical Connection unit : mm (typ) 7012-004 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 876 5 1234 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view

No.9078-3/6 Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] PW=10μs D.C.≤1% P.G 50Ω G S D ID= --1.5A RL=4Ω VDD= --6V VOUT VEC2801 VIN --4.5V VIN Duty≤10% 50Ω 100Ω 10Ω --5V trr 100mA100mA 10mA 10μs Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- Ta Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V ID -- VGSID -- VDS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A [MOSFET] [MOSFET] [MOSFET] [MOSFET] - -60 - -40 - -20 0 20 40 60 80 100 120 140 1600 --1 --2 --3 --4 --5 --6 100 120 160 140 --7 --8 IT08943 --0.5 --1.0 --2.0 --0.2 --1.5 --3.0 --2.5 VGS= --1.0V --1.8V --4.5V --2.5V --1.5V IT08898 --1 --2 --3 --4 --5 --6 VDS= --6V --25 °CTa=75 IT08899 IT08901 VGS= --1.8V , ID= --0.3A VGS= --2.5V , ID= --1.5A VGS= --4.5V , ID= --3.0A 120 100 --3.5V --3.0V ID= --0.3A --1.5A Ta=25°C --3.0A

No.9078-4/6 ⏐yfs⏐ -- ID Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 1281 0624 --4.5 VDS= --6V ID= --3A IT08904 0 20 40 60 80 100 120 140 160 IT08906 --10 --1.0 --0.1 --0.01 IT08905 100 VDD= --6V VGS= --4.5V td(on) td(off) tr tf IT08903 0.2 0.4 0.6 0.8 1.0 0.9 100ms DC operation Operation in this area is limited by RDS(on). ID= --3A IDP= --12A †10μs 1ms10ms 100 --2 1000 --4 --6 --8 --12 --10 f=1MHz Ciss Coss Crss IT03872 IT03869 --0.01 0.1 --0.123 5 7 --1.023 5 7 23 5 7 1.0 --10 IT08902 --0.01 --0.1 --10 --1.0 VGS=0V --25 Ta=75 VDS= --6V 75°C Ta= --25 25°C Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm 2✕0.8mm) 1unit

No.9078-5/6 Surge Forward Current, IFSM(Peak) -- A [SBD] [SBD] [SBD] [SBD] [SBD] From Top Ta=125°C 100°C 75°C 50°C 25°C (3) 1.0 10 100 1.0 35 7 2 C -- VR f=1MHz 100 1.0 0.1 0.01 1551 0 IR -- VR 0.2 0.4 0.6 0.8 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.4 PF(AV) -- IO 0.1 0.01 1.0 IF -- VF Ta=125 25°C 50°C 75°C 100°C IT02957 IT02958 IT02959 IT02960 IS 20ms t 7 0.01 23 7 0.1 52 2 37 1.05 IFSM -- t IT00636 Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- mA Average Output Current, IO -- A Average Forward Power Dissipation, PF(A V) -- W Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Current waveform 50Hz sine wave Time, t -- s (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (2) (4)(1) 180° 360° Sine wave θ 360° Rectangularwave

No.9078-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS Note on usage : Since the VEC2801 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice.