VEC2616 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance Nch: R DS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.)
  • 4V drive
  • N-channel MOSFET + P-channel MOSFET Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 60 - -60 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 3 - -2.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 12 - -10 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm ×0.8mm) 1unit 0.9 W Total Dissipation PT When mounted on ceramic substrate (900mm ×0.8mm) 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7012-002 91510PE TK IM TC-00002461 SANYO Semiconductors DATA SHEET VEC2616 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : VEC8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 TL 876 5 1234 UP Lot No.

No. A1822-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current IDSS V DS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 2.6 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=1.5A, VGS=10V 62 80 m Ω RDS(on)2 I D=0.75A, VGS=4.5V 76 106 m Ω RDS(on)3 I D=0.75A, VGS=4V 83 116 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 505 pF Output Capacitance Coss V DS=20V, f=1MHz 57 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 37 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 7.3 ns Rise Time tr See specifi ed Test Circuit. 7.5 ns Turn-OFF Delay Time td(off) See specifi ed Test Circuit. 41 ns Fall Time tf See specifi ed Test Circuit. 22 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=3A 10 nC Gate-to-Source Charge Qgs V DS=30V, VGS=10V, ID=3A 1.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=30V, VGS=10V, ID=3A 2.1 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.81 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -60 V Zero-Gate Voltage Drain Current IDSS V DS=--60V, VGS=0V - -1 μA Gate-to-Source Leakage Curr ent IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -1.5A 3.9 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -1.5A, VGS=- -10V 105 137 mΩ RDS(on)2 I D=- -0.75A, VGS=- -4.5V 128 180 mΩ RDS(on)3 I D=- -0.75A, VGS=- -4V 138 194 mΩ Input Capacitance Ciss V DS=- -20V, f=1MHz 420 pF Output Capacitance Coss V DS=- -20V, f=1MHz 54 pF Reverse Transfer Capacitance Crss V DS=- -20V, f=1MHz 44 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 6.4 ns Rise Time tr See specifi ed Test Circuit. 9.8 ns Turn-OFF Delay Time td(off) See specifi ed Test Circuit. 65 ns Fall Time tf See specifi ed Test Circuit. 36 ns Total Gate Charge Qg VDS=- -30V, VGS=- -10V, ID=- -2.5A 11 nC Gate-to-Source Charge Qgs V DS=- -30V, VGS=- -10V, ID=- -2.5A 1.4 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -30V, VGS=- -10V, ID=- -2.5A 2 nC Diode Forward Voltage VSD IS=- -2.5A, VGS=0V - -0.83 - -1.2 V

No. A1822-3/6 Switching Time Test Circuit [N-channel] [P-channel] PW=10μs D.C.≤1% P. G 50Ω G S D ID=1.5A RL=20Ω VDD=30V VOUT VIN 10V VIN VEC2616 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --1.5A RL=20Ω VDD= --30V VOUT VIN --10V VIN VEC2616 [Nch] [Nch] [Nch] [Nch]RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V IT15538 - -60 120 140 100 130 150 110 160 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS =4.5V , I D=0.75A VGS =10.0V , I D=1.5AVGS =4.0V , I D=0.75A 048 1 2 1 42 6 10 16 IT15537 170 130 110 100 140 120 160 150 Ta=25°C ID=0.75A 1.5A ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 2.0 3.0 5.5 6.0 1.0 1.5 4.0 2.5 3.5 0.5 4.5 5.0 1.0 2.0 4.0 4.5 0.2 0.1 3.0 1.5 0.5 2.5 3.5 IT13789 IT13790 Ta=75 --25 4.0V 3.5V 3.0V VDS=10V 15.0V 10.0V 4.5V VGS=2.5V 7.0V

No. A1822-4/6 [Nch] [Nch] [Nch] [Nch] [Nch] [Nch] [Pch] [Pch] SW Time -- ID Ciss, Coss, Crss -- VDS IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A IT13795 IT13793 0.1 1.023 5 7 23 5 7 02 0 4 010 30 50 60 100 1000 IT13796 IT13794 0.01 0.1 1.0 VGS=0V --25 Ta=75 td(on) td(off) tf tr VDD=30V VGS=10V Ciss Coss Crss f=1MHz 0.01 0.1 0.127 35 2 1027 351.0735 1.0 VDS=10V 75°CTa= --25 25°C | yfs | -- ID Forward Transfer Admittance, | yfs | -- S VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V 04 7 9623 518 10 IT13797 VDS=30V ID=3A --2 --1 --5 --3 --4 --0.5 --1.5 --2.0 --1.0 --2.5 IT15911 IT15912 Ta=75 --25 VGS= --2.5V VDS= --10V --3.5V --16.0V --10.0V --4.0V --4.5V IT15910 0.01 0.123 5 23 5 77 1.023 5 7 2 0.01 0.1 1.0 IDP=12A (PW≤10μs) ID=3A 100μs DC operation (Ta=25 °C) 1ms 100ms 10ms Operation in this area is limited by RDS(on). 10 10035 7 --6.0V --3.0V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) 1unit

No. A1822-5/6 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V --1 --2 --3 --4 --5 --6 --7 --8 --10 --9 1112 4 6 8 1 0 VDS= --30V ID= --2.5A IT15919 --60 100 150 200 300 250 --40 --20 0 20 40 60 80 100 120 140 160 VGS= --4.5V , I D= --0.75A VGS= --10.0V , I D= --1.5A IT15914 0- - 2 200 --4 300 100 250 150 Ta=25°C ID= --1.5A --0.75A IT15913 --5 1000 100 f=1MHz IT15918 Ciss Coss Crss --0.1 100 --1.022 735 7 35 IT15917 td(on) tr VDD= --30V VGS= --10V tf td(off) --0.01 --0.1 --1.0 VGS=0V --0.01 --0.1 0.1 --1.02 3 57 2 3 57 2 3 5 1.0 VDS= --10V IT15915 IT15916 Ta= --25 --25 25°C Ta=75 °C25°C 75°C VGS= --4.0V , I D= --0.75A [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] IT15920 --0.01 --0.123 5 23 5 77 --1.023 5 7 2 --0.01 --0.1 --1.0 --10 IDP= --10A (PW≤10μs) ID= --2.5A 100μs DC operation (Ta=25 °C) 1ms 100ms 10ms Operation in this area is limited by RDS(on). --10 --10035 7 Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) 1unit

No. A1822-6/6PS This catalog provides information as of September, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the VEC2616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 20 40 60 1.0 0.6 0.2 0.8 0.9 0.4 1.2 140100 120 160 IT15921 1unit [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) Total dissipation