VEC2601

VEC2601 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

• A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting.
• Best suited for load switches.
• 2.5V drive.
• 0.75mm mount high. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V DSS 30 - -20 V Gate-to-Source Voltage V GSS ±10 ±10 V Drain Current (DC) I D 0.15 - -3 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 0.6 - -12 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =80mA 0.15 0.22 S Marking : BD Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 91207PE TI IM TC-00000864 SANYO Semiconductors DATA SHEET VEC2601 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

Applications

No. A0933-2/6 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit R DS (on)1 I D =80mA, VGS =4V 2.9 3.7 Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =40mA, VGS =2.5V 3.7 5.2 Ω R DS (on)3 I D =10mA, VGS =1.5V 6.4 12.8 Ω Input Capacitance Ciss V DS =10V, f=1MHz 7.0 pF Output Capacitance Coss V DS =10V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 2.3 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 19 ns Rise Time t r See specified Test Circuit. 65 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 155 ns Fall Time t f See specified Test Circuit. 120 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =150mA 1.58 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =150mA 0.26 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =150mA 0.31 nC Diode Forward Voltage V SD IS=150mA, VGS =0V 0.87 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -20 V Zero-Gate Voltage Drain Current I DSS VDS =- -20V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =--1mA - -0.4 - -1.3 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -1.5A 2.9 4.9 S R DS (on)1 I D =- -2A, VGS =- -4.5V 55 72 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =- -1A, VGS =- -2.5V 77 108 m Ω R DS (on)3 I D =- -0.3A, VGS =- -1.8V 112 168 m Ω Input Capacitance Ciss V DS =- -10V, f=1MHz 680 pF Output Capacitance Coss V DS =- -10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 80 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 13 ns Rise Time t r See specified Test Circuit. 53 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 77 ns Fall Time t f See specified Test Circuit. 62 ns Total Gate Charge Qg V DS =- -10V, VGS =- -4.5V, ID =- -3A 8.2 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -4.5V, ID =- -3A 1.7 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -4.5V, ID =- -3A 2.1 nC Diode Forward Voltage V SD IS=- -3A, VGS =0V - -0.88 - -1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7012-009 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1 SANYO : VEC8 876 5 1234 1 : Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1 Top view

No. A0933-3/6 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =80mA R L=187.5Ω VDD =15V VOUT VEC2601 VIN VIN PW=10 µs D.C.≤1% P.G 50Ω G S D ID = --1.5A R L=6.67Ω VDD = --10V VOUT VIN --4.5V VIN VEC2601 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 V GS =1.5V 2.0V 2.5V 4.0V 3.5V 3.0V 6.0V 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 V DS =10V Ta=--25 IT00029 IT00030 Drain Current, ID -- A R DS (on) -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Drain Current, ID -- A R DS (on) -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Drain Current, ID -- A R DS (on) -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- Ω 789 1 0 Ta=25°C 0.01 0.1 23 5 7 23 5 7 1.0 1.0 25°C --25°C Ta=75°C IT00031 IT00032 V GS =4V 40mA ID =80mA 0.01 0.1 23 5 7 23 5 7 1.0 1.0 V GS =2.5V 0.001 1.0 0.0123 5 7 23 5 7 100 0.1 V GS =1.5V Ta=75°C 25°C --25°C --25°C 25°C Ta=75°C IT00033 IT00034 [Nch] [Nch] [Nch] [Nch] [Nch] [Nch] Switching Time Test Circuit [N-channel] [P-channel]

No. A0933-4/6 VGS -- Qg Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC 0 2468 1 0 1 2 1 41 61 82 0 1.0 100 Ciss Coss Crss f=1MHz V DS =10V ID =150mA IT00039 IT00040 Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S yfs -- ID Ambient Temperature, Ta -- °C R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- Ω 0.01 0.1 1.0 V GS =0V --25 °C 25 °CTa=75 0.01 0.123 5 7 2 1000 100 V DD =15V V GS =4V td(on) tr tf td(off) IT00037 IT00038 --60 --40 --20 02 0 40 60 80 100 120 140 160 V GS=2.5V , I D=40mA V GS=4.0V , I D=80mA 0.01 0.01 0.123 5 7 23 5 7 0.1 1.0 1.0 V DS =10V 75°C 25°CTa= --25 IT00035 IT00036 [Nch] [Nch] [Nch] [Nch] [Nch] [Nch] [Nch] A S O Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V 0.001 0.1 1.0 0.01 20.123 5 7 2 1.0 10 35 723 5 70.01 IT12926 IDP =0.6A ID =0.15A Operation in this area is limited by RDS (on). 100ms DC operation 37 5 10ms (Ta=25 °C) 1ms PW ≤10µs Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit

No. A0933-5/6 --0.5 --1.0 --2.0 --2.5 --3.0 --3.5 --4.0 --0.2 --1.5 ID -- VDS --1 --3 --4 --2 --5 --6 --7 ID -- VGS IT11952 IT06417 V DS = --10V --25 Ta=75 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 160 100 140 120 R DS (on) -- VGS IT11856 Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V IT11857 R DS (on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C V GS = --1.5V --2.0V --3. --4.0V --4. --3.5V --2.5V --1.8V ID = --0.3A --2.0A Ta=25°C --60 --40 --20 0 20 60 40 80 100 140 120 160 100 120 140 160 V GS = --4.5V , ID= --2.0AV GS= --2.5V , I D= --1.0AV GS= --1.8V , ID= --0.3A yfs -- ID IT06420 SW Time -- ID IT06422 IT06421 --0.001 --0.01 --0.1 --10 --1.0 IS -- VSD Ta=75 --25 V GS =0V 1.0 --10--1.0 75327 532 V DS = --10V --0.1 - -1.023 5 7 23 5 7 100 75°C 25°C Ta= --25 V DD = --10V V GS = --4.5V td(on) td(off) tr tf Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS 100 1000 IT06423 Ciss Crss Coss f=1MHz Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch]

No. A0933-6/6PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the VEC2601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice. VGS -- Qg IT12927Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 048 1 0 26 --4.5 --3.0 --4.0 --3.5 --2.0 --2.5 --1.0 --0.5 --1.5 V DS = --10V ID = --3A 0.2 0.4 0.6 0.8 0.9 1.0 1.2 02 0 4 06 08 0 1 0 0 120 140 160 IT12929 [Nch, Pch] [Pch] [Pch] Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 2✕0.8mm) 1unit PD -- Ta Ambient Temperature, Ta -- °C IT12928 ID = --3A --0.1 --1.0 --10 --0.01 IDP = --12A 100ms DC operation (Ta=25 °C) 1ms10m s Operation in this area is limited by RDS (on). 100µs PW ≤10µs Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit