V850-2106-001 FINISAR | Alldatasheet
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FEATURES: 850nm isolated cathode and anode VCSEL array Capable of 10Gbps per channel modulation Capable of flip chip mounting 10GBPS 850NM VCSEL ARRAYS V850-2106-001, V850-TBD-001 DATA SHEET The V850-2106-001 and the V850-TBD-001 are high-performance 850 nm VCSEL (Vertical Cavity Surface-Emitting Laser) array die optimized for high- speed data communications. The array die are ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays are available in either 4 or 12 channel configurations. Each device is a high radiance VCSEL designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. The V850-2106-001 and the V850-TBD-001are designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors. The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and eases driver design. Designed to interface with 50/125 and 62.5/125um multimode fiber, the VCSELs produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power. The dual top side contacts provide a minimum 1um Au for ease of wire bonding. Wire bonding should be done with minimal pressure to ensure the VCSEL is not damaged. The die must be mounted using thermally conductive media. The VCSEL arrays are shipped on medium tack blue tape in 6 inch grip rings. Part Number Description V850-2106-001 10Gbps 4 channel VCSEL die array, dual top side contact, semi- insulating substrate. V850-TBD-001 10Gbps 12 channel VCSEL die array, dual top side contact, semi- insulating substrate
V850-2106-001, V850-TBD-001 10GBPS 850NM VCSEL ARRAY NOTICE: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability. The inherent design of this component causes it to be sensitive to electrostatic discharge (ESD). To prevent ESD-induced damage and/or degradation to equipment, take normal ESD precautions when handling this product ABSOLUTE MAXIMUM RATINGS Parameter Rating Storage temperature -40oC to +85oC Operating temperature 0 to +85oC Maximum Die Exposure Temperature 320oC, 30 sec. Reverse Power Supply Voltage 5V Continuous Forward Current 12mA ESD exposure (Human body model) 200V LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 1M LASER PRODUCT INVISIBLE LASER RADIATION DO NOT VIEW DIRECTLY WITH OPTICAL INSTRUMENTS 10mW at 820 - 860nm CLASS 1M LASER PRODUCT COMPLIES WITH IEC/EN 60825-1 Ed1.2:2001 COMPLIES WITH 21 CFR 1040.10 AND 1040-10.11 EXCEPT FOR DEVIATION PURSUANT TO LASER NOTICE NO.50 DATED 26 JULY 2001 Advanced Optical Components
600 Millennium Drive,
Allen, TX 75013
V850-2106-001, V850-TBD-001 ELECTRICAL-OPTICAL CHARACTERISTICS TA = 25oC unless otherwise stated VCSEL Parameters Test Condition Symbol Min. Typ. Max. Uniformity Units Notes Optical Output Power IF = 6.5mA PO 1.0 2.0 15% mW 2 Threshold Current ITH 0.5 0.8 1.25 0.2 mA Threshold Current maximum deviation from 25oC value TA=0 to 70ºC ΔITH -0.25 0.8 0.2 mA 3TA=25 to 85ºC 1.0 TA=0 to 25ºC 0.2 Temperature at minimum threshold current T0 -10 30 oC 3 Slope Efficiency TA=25ºC η 0.3 0.5 0.6 0.05 mW/mA 4TA=-40ºC 0.65 TA=85ºC 0.19 Slope Efficiency Temperature Variation TA=0 to 70ºC Δη/ΔT -2000 -7000 -10000 ppm/ºC 5 Peak Wavelength IF=6mA TA=0 to 70ºC λP 840 850 860 1 nm λP Temperature Variation IF=6mA TA=0 to 70ºC ΔλP/ΔT 0.06 nm/ºC RMS Spectral Bandwidth IF=6mA Δλ 0.45 0.65 nm Theshold Voltage TA=0 to 70ºC VTH 2 V Laser Forward Voltage IF=6mA VF 1.8 2.1 0.1 V Rollover Pmax 4.0 mW 6 Rise/Fall Time Pavg = 2mW, Extinction Ratio = 5dB TR TF ps 7 Relative Intensity Noise 10GHz BW, IF=6mA RIN -135 -130 dB/Hz Series Resistance IF = 6mA, TA=25ºC RS 40 50 63 3 OhmsTA=-40ºC 75 TA=85ºC 30 Series Resistance Temperature Coefficient IF = 6mA, TA=0 to 70ºC ΔRS/ΔT -3000 ppm/ºC 8 Capacitance IF=6mA, F=1MHz C 0.25 10% pF Beam Divergence Θ 15 30 10% Degrees 9 Beam Divergence current variation ΔΘ/ΔIF 0.6 10% Degrees /mA Junction Thermal Impedance ΘJ 1000 ºC/W Die Thermal Impedance ΘP 100 ºC/W Uniformity is the difference between the maximum and the minimum measured value across the array. Maximum and Minimum are defined per array.
V850-2106-001, V850-TBD-001 10GBPS 850NM VCSEL ARRAY NOTES 1. Reliability is a function of temperature, see www.finisar.com/aoc.php for details. 2. For the purpose of these tests, I F is DC current. 3. Threshold current varies as (T A – T0)2. It may either increase or decrease with temperature, depending upon relationship of T A to T0. The magnitude of the change is proportional to the threshold at T0. 4. Slope efficiency is defined as ΔPO/ΔIF. 5. To compute the value of Slope Efficiency at a temperature T, use the following equation: η(T) ≈η(25oC)*[1+(Δη/ΔT)*(T-25)] 6. Rollover is the power at which a further current increase does not result in a power increase. 7. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure <135ps fall time. Rise and fall times are sensitive to drive electronics. 8. To compute the value of Series Resistance at a temperature T, use the following equation: R S(T) ≈RS(25oC)*[1+ΔRS/ΔT)*(T-25)] 9. Beam divergence is defined as the total included angle between the 1/e2 intensity points. TYPICAL PERFORMANCE CURVES Emitted Power vs. Current: Power varies approximately linearly with current above threshold. Threshold Current vs. Temperature: Threshold current varies parabolically with temperature; thus it can be nearly constant for a limited temperature range.
V850-2106-001, V850-TBD-001 4-CHANNEL ARRAY 12-CHANNEL ARRAY DIE DIMENSIONS: (μm) Dimension 4-Channel 12-Channel Length 1215 3215 Width 400 400 Height 200 200
Phone:1-866-MY-VCSEL USA (toll free) 1-214-509-2700 USA (Direct dial) 44 (0) 174 336 5533 Europe 886-935-409898 China & Taiwan 81-90-4437-1130 Japan 82-11-220-6153 Asia Pacific & Korea Fax: 1-214-509-3709 USA Email: support@adopco.com WEB: www.finisar.com/aoc.php ADVANCED OPTICAL COMPONENTS Finisar’s ADVANCED OPTICAL COMPONENTS division was formed through strategic acquisition of key optical compon- ent suppliers. The company has led the industry in high volume Vertical Cavity Surface Emitting Laser (VCSEL) and associated detector technology since 1996. VCSELs have become the primary laser source for optical data communi- cation, and are rapidly expanding into a wide variety of sensor applications. VCSELs’ superior reliability, low drive current, high coupled power, narrow and circularly symmetric beam and versatile packaging options (including arrays) are enabling solutions not possible with other optical technologies. ADVANCED OPTICAL COMPONENTS is also a key supplier of Fabrey-Perot (FP) and Distributed Feedback (DFB) Lasers, and Optical Isolators (OI) for use in single mode fiber data and telecommunications networks LOCATION Allen, TX - Business unit headquarters, VCSEL wafer growth, wafer fabrication and TO package assembly. Fremont, CA – Wafer growth and fabrication of 1310 to 1550nm FP and DFB lasers. Shanghai, PRC – Optical passives assembly, including optical isolators and splitters. SALES AND SERVICE Finisar’s ADVANCED OPTICAL COMPONENTS division serves its customers through a worldwide network of sales offices and distributors. For application assistance, current specifications, pricing or name of the nearest Authorized Distributor, contact a nearby sales office or call the number listed below. AOC CAPABILITIES ADVANCED OPTICAL COMPONENTS’ advanced capabilities include: 1, 2, 4, 8, and 10Gbps serial VCSEL solutions 1, 2, 4, 8, and 10Gbps serial SW DETECTOR solutions VCSEL and detector arrays 1, 2, 4, 8, and 10Gbps FP and DFB solutions at 1310 and 1550nm 1, 2, 4, 8, and 10Gbps serial LW DETECTOR solutions Optical Isolators from 1260 to 1600nm range Laser packaging in TO46, TO56, and Optical subassemblies with SC, LC, and MU interfaces for communication networks VCSELs operating at 670nm, 780nm, 980nm, and 1310nm in development Sensor packages include surface mount, various plastics, chip on board, chipscale packages, etc. Custom packaging options V850-2106-001, V850-TBD-001 10GBPS 850NM VCSEL ARRAY