V105Q121A-850 OSRAM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 22

Technical content

1 | Version 1.0 | 2023-11-23 www.osram-os.com V105Q121A-850 Datasheet Published by ams-OSRAM AG Tobelbader Strasse 30, 8141 Premstaetten, Austria Phone +43 3136 500-0 ams-osram.com © All rights reserved

2 | Version 1.0 | 2023-11-23 BIDOS® P2433 Q V105Q121A-850 850 nm Multi-Mode VCSEL Power Array Designed for Sensor Field of Interest : 60° x 45°

Applications

  • Access Control & Security

Features

  • Package: QFN Package - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Very small SMT package - VCSEL power array - High optical power - IR Laser with photodiode

3 | Version 1.0 | 2023-11-23

Ordering Information

IF = 4 A; tp = 300 µs; D = 0.05 Type Optical output power Ordering Code typ. Popt V105Q121A-850 3 W Q65113A5438 Depending on the mode of operation, these devices emit highly concentrated visible and non-visible light which can be haz- ardous to the human eye. Products which incorporate these devices must follow the safety precautions given in the “Notes” section.

4 | Version 1.0 | 2023-11-23 Maximum Ratings TA = 25 °C Parameter Symbol Values Operating temperature (refers to TA; TA = 85°C with reduced efficiency) Top min. max. -20 °C 85 °C Storage temperature Tstg min. max. -40 °C 100 °C Soldering temperature tmax = 10 s TS max. 260 °C ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV IR Laser Junction temperature Tj max. 125 °C Forward current pulsed tp ≤ 500 μs; D = 0.01 IF pulse max. 6 A Reverse voltage 5) VR Not designed for reverse operation Photodiode Reverse voltage 5) VR max. 20 V Breakdown voltage VBR min. 50 V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

5 | Version 1.0 | 2023-11-23 Characteristics tp = 300 µs; D = 0.05; TA = 25 °C Parameter Symbol Values IR Laser Peak wavelength 6) λpeak min. typ. max. 840 nm 850 nm 860 nm Optical output power 7) IF = 4 A Popt min. typ. 2.85 W 3.00 W Field of view (HFOV) Angle at Ee,50% level, normalized to the centroid Θ|| typ. 63 ° Field of view (VFOV) Angle at Ee,50% level, normalized to the centroid Θ⊥ typ. 50 ° Dimensions of chip area L x W typ. 0.9 x 1.0 mm x mm Slope efficiency IF = 1 A … 2 A η typ. 0.95 W/ A Power conversion efficiency IF = 4 A η tot typ. 38 % Threshold current Ith typ. 0.9 A Forward voltage 8) IF = 4 A VF min. typ. max. 1.95 V 2.10 V 2.45 V Rise time 10% and 90% of Ie max tr typ. 1 ns Fall time 10% and 90% of Ie max tf typ. 1 ns Temperature coefficient of wavelength TCλ typ. 0.06 nm/ K Thermal resistance junction solder point real tp = 0.01 s RthJS real max. 11 K/ W

6 | Version 1.0 | 2023-11-23 Characteristics TA = 25 °C Parameter Symbol Values Photodiode Wavelength of max sensitivity λS max typ. 800 nm Spectral range of sensitivity λ10% typ. 450 … 1050 nm Photocurrent λ = 850 nm, Ee = 0.5 mW/cm², VR = 3.3 V IP typ. 0.25 µA Photocurrent 9) with VCSEL @ IF = 4 A; λ = 850 nm; VR = 3.3 V IP min.. typ. max. 0.45 mA 0.50 mA 0.75 mA Dimensions of chip area L x W typ. 0.38 x 0.38 mm x mm Dark current VR = 3.3 V, E = 0 IR typ. max. 0.1 nA 30 nA Open-circuit voltage λ = 850 nm, Ee = 0.5 mW/cm² VO typ. 320 mV Short-circuit current λ = 850 nm, Ee = 0.5 mW/cm², VR = 0 V ISC typ. 235 nA Rise time 10 %/ 90%; λ = 850 nm tr typ. 1 ns Fall time 10 %/ 90%; λ = 850 nm tf typ. 1 ns Forward voltage IF = 10 mA, E = 0 VF typ. max. 0.85 V 1.00 V Capacitance Ee = 0 mW/cm², f = 1 MHz, VR = 0 V C0 typ. 2 pF Temperature coefficient of sensitivity λ = 940 nm, Ee = 0.5 mW/cm², VR = 3.3 V TCI typ. 0.23 %/ K

7 | Version 1.0 | 2023-11-23 Relative Spectral Emission 1), 2)

  • infrared (850 nm): Ie,rel = f (λ); IF = 4000 mA; tp = 300 µs 846 848 850 852 854 λ [ 0.0 0.2 0.4 0.6 0.8 1.0 Radiation Characteristics 1), 2)
  • infrared (850 nm): Ee,rel = f (φ); IF = 4000 mA; tp = 300 µs; D = 0.05 φ [ 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 :0 ° :9 0°

8 | Version 1.0 | 2023-11-23 Far-Field Illumination Pattern 2)

  • infrared (850 nm): Ie,rel = f (φ); IF = 4000 mA; tp = 300 µs; D = 0.05

9 | Version 1.0 | 2023-11-23 Relative Spectral Sensitivity 1), 2) ■ photodiode: Srel = f (λ) 400 600 800 1000 λ [ 100 Optical Output Power 1), 2)

  • infrared (850 nm): Popt = f (IF); tp = 300 µs; D = 0.05 0 1 2 3 4 5 6 1000 2000 3000 4000 5000 Forward Voltage 1), 2)
  • infrared (850 nm): VF = f (IF); tp = 300 µs; D = 0.05 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0

10 | Version 1.0 | 2023-11-23 Photocurrent 1), 2) ■ photodiode: IP = f (Popt); VR = 3.3 V Dark Current 1), 2) ■ photodiode: IR = f (VR) 0 5 10 15 20 100 200 300 400 Capacitance 1), 2) ■ photodiode: C = f (VR); 10-3 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0

11 | Version 1.0 | 2023-11-23 Permissible Pulse Handling Capability

  • infrared (850 nm): IF = f (tp); D = param.; TA = 25 °C 10-5 10-4 10-3 0.01 0.1 1 10 :D =0 .5 :D =0 .2 :D =0 .1 :D =0 .05 :D =0 .02 :D =0 .01 :D =0 .005 Permissible Pulse Handling Capability
  • infrared (850 nm): IF = f (tp); D = param.; TA = 85 °C 10-5 10-4 10-3 0.01 0.1 1 10 :D =0 .5 :D =0 .2 :D =0 .1 :D =0 .05 :D =0 .02 :D =0 .01 :D =0 .005

12 | Version 1.0 | 2023-11-23 Dimensional Drawing 3) Further Information: Approximate Weight: 20.0 mg

13 | Version 1.0 | 2023-11-23 Recommended Solder Pad 3)

14 | Version 1.0 | 2023-11-23 Reflow Soldering Profile Product complies to MSL Level 3 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* TP to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

15 | Version 1.0 | 2023-11-23 Taping 3)

16 | Version 1.0 | 2023-11-23 Tape and Reel 4) Reel Dimensions A W Nmin W1 W2 max Pieces per PU 180 mm 12 + 0.3 / - 0.1 mm 60 mm 12.4 + 2 mm 18.4 mm 2000

17 | Version 1.0 | 2023-11-23 Barcode-Product-Label (BPL) Dry Packing Process and Materials OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, M oisture Level 3 Floor tim e 168 Hours M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or reflow, vapor-phase reflow, or equivalent processing (peak package 2. After this bag is opened, devices that will be subjected to infrared 1. Shelf life in sealed bag: 24 m onths at < 40 ˚C and < 90% relative hum idity (RH). M oisture Level 5a at factory conditions of (if blank, seal date is identical with date code). a) M ounted within b) Stored at body tem 3. Devices require baking, before m ounting, if: Bag seal date M oisture Level 1 M oisture Level 2 M oisture Level 2a4. If baking is required, b) 2a or 2b is not m et. Date and tim e opened: reference IPC/JEDEC J-STD-033 for bake procedure. Floor tim e see below If blank, see bar code label Floor tim e > 1 Year Floor tim e 1 Year Floor tim e 4 W eeks10% RH. M oisture Level 4 M oisture Level 5 ˚C). OPTO SEMICONDUCTORS MOISTURE SENSITIVE This bag contains CAUTION Floor tim e 72 Hours Floor tim e 48 Hours Floor tim e 24 Hours 30 ˚C/60% RH. LEVEL If blank, see bar code label

18 | Version 1.0 | 2023-11-23 Notes Depending on the mode of operation, these devices emit highly concentrated visible and non visible light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1. Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit https://ams-osram.com/support/application-notes

19 | Version 1.0 | 2023-11-23 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on our website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications Our components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. Our products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using our components in product safety devices/ applications or medical devices/applications, buyer and/or customer has to inform our local sales partner immediately and we and buyer and /or customer will analyze and coordinate the customer-specific request between us and buyer and/or customer.

20 | Version 1.0 | 2023-11-23 Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devices, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 2) Testing temperature: TA = 25°C (unless otherwise specified) 3) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 4) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm. 5) Reverse Operation: This product is intended to be operated applying a forward current within the specified range. Applying any continuous reverse bias or forward bias below the voltage range of light emission shall be avoided because it may cause migration which can change the electro-optical characteristics or damage the LED. 6) Wavelength: The wavelengths are measured with a tolerance of ±1 nm. 7) Brightness: The brightness values are measured with a tolerance of ±11%. 8) Forward Voltage: The forward voltages are measured with a tolerance of ±0.1 V. 9) Photocurrent: The photocurrent values are measured (by irradiating the devices with a homogenous light source and applying a voltage to the device) with a tolerance of ±11 %.

21 | Version 1.0 | 2023-11-23

Revision History

1.0 2023-11-23 Initial Version

22 | Version 1.0 | 2023-11-23 Published by ams-OSRAM AG Tobelbader Strasse 30, 8141 Premstaetten, Austria Phone +43 3136 500-0 ams-osram.com © All rights reserved