V102Q123A-940 OSRAM | Alldatasheet

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Technical content

BIDOS ® Version 1.1 V102Q123A-940

Ordering Information

T A = 25 °C , I F = 2.7 A, t p = 300 µs; D = 0.05 Features:

  • Package: QFN Package
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Clas s 2)
  • IR laser wavelength 940nm
  • VCSEL power array
  • 1 Watt up to 2.5 Watts of power
  • Die size 0.870 x 0.870 nm
  • Package size: (WxDxH) 2.4 mm x 3.3 mm x 1.2 mm
  • IR Laser with photodiode

Applications

  • 3D Capturing
  • Access Control (IRIS/Vein Scan, Face Recognition)
  • Augmented Reality, Mixed Reality
  • Gesture Recognition
  • Virtual Reality Note Depending on the mode of operation, these devices emit hi ghly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorpo rate these devices have to follow the safety precautions given in IEC 60825-1 "Safety of laser pr oducts". Type Peak output power Ordering Code Popt [W] V102Q123A-940 typ. 2 Q65112A9854

Version 1.1 V102Q123A-940 Maximum Ratings Characteristics (T A = 25 °C , tp = 300 µs; D = 0.05) Parameter Symbol Values Unit Operating temperature range (85°C with reduced efficiency) Top -20 ... 85 °C Storage temperature range T stg -40 ... 85 °C Soldering temperature (t max = 10 s) TS 260 °C ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) V ESD 2 kV IR Laser Forward Current (CW mode) I F 2.5 A Surge current p ≤ 600 µs, D = 0 .01) IFSM 4 A Reverse voltage 2) page 14 VR 5 V Photodiode Reverse voltage V R 5 V Note : Stresses beyond those listed under Maximum Ratings m ay cause permanent damage to the device. Parameter Symbol Values Unit IR Laser Peak emission wavelength 5) page 14 (min) (typ (max) λpeak 930 945 nm nm Peak output power 1) page 14 (IF = 2.7 A) (min) (typ) Popt 2.0 2.15 W W Threshold current (typ) (max) Ith 0.25 0.40 A A Slope efficiency (min) (typ) η 0.7 0.85 W/A W/A Power conversion efficiency F = 2.7 A) (typ) η tot 38 % Field of View incl. OE (HFOV) (min) Θ || 50 ° Field of View incl. OE (VFOV) (min) Θ ⊥ 63 ° Chip dimensions (typ) L x W 0.87 x 0.87 mm x mm

Version 1.1 V102Q123A-940 2020-12-16 3 Rise and fall times of I e ( 20% and 80% of I e max ) (typ) t r / t f 1 ns Forward voltage 4) page 14 (IF = 2.7 A) (min) (typ) (max) V F 1.75 2.2 2.25 V V V Temperature coefficient of Wavelength (typ) TC λ 0.07 nm/K Thermal resistance junction solder point real (max ) R thJS 11 K / W Photodiode Wavelength of max sensitivity (typ) λ S max 910 nm Spectral range of sensitivity (typ) λ 10% 400 ... 1100 nm Photocurrent (λ = 940 nm, E e = 0.5 mW/cm², V R = 3.3 V) (typ) I P 310 nA Photocurrent (Std. light A, E v = 1000 lx; V R = 3.3 V) (typ) I P 890 nA Photocurrent 3) page 14 (with VCSEL @I F = 2.7 A, V R = 3.3 V) (min) (typ) (max) IP 420 600 680 µA µA µA Dark current R = 3.3 V) (typ) (max) IR 0.1 nA nA Chip dimensions (typ) L x W 0.36 x 0.36 mm x mm Rise and fall time ( 10% and 90%) (λ = 940 nm, V R = 3.3 V, R L = 50 Ω) (typ) t r, t f 320/ 200 ns Forward voltage 4) page 14 (IF = 10 mA, E = 0) (typ) (max) VF 0.9 1.25 V V Open-circuit voltage (λ = 940 nm, E e = 0.5 mW/cm²) (typ) V O 260 mV Short-circuit current (λ = 940 nm, E e = 0.5 mW/cm², V R = 0 V) (typ) I SC 270 nA Short-circuit current (Std. light A, E v = 1000 lx, V R = 0 V) (typ) I SC 810 nA Capacitance (E e = 0 mW/cm², f = 1 MHz, V R = 0V) (typ) C 0 2.1 pF Temperature coefficient of Sensitivity (λ = 940 nm, E e = 0.5 mW/cm², V R = 3.3V) (typ) TC I 0.23 %/K Temperature coefficient of Voltage (I F = 10 mA, E = 0) (typ) TC V -1.2 mV/K Parameter Symbol Values Unit

Version 1.1 V102Q123A-940 Diagrams IR Laser Relative Spectral Emission 6) page 14 Irel = f(λ), tp = 300 µs; D = 0.05, TA = 25°C Optical output power 6) page 14 Popt = f(I F), tp = 300 µs; D = 0.05, TA= 25°C Forward Current 6) page 14 IF = f(V F), tp = 300 µs; D = 0.05, TA= 25°C Max. Permissible Forward Current IF, max = f(T A), R thJS = 11 K / W V 1 0 2 Q 1 2 3 A - 9 4 0 930 932 934 936 938 940 λ [n m ] 0.0 0.2 0.4 0.6 0.8 1.0I r e l [% ] V 1 0 2 Q 1 2 3 A - 9 4 0 0 1 2 3 4 I F [A ] 0.0 0.5 1.0 1.5 2.0 2.5 3.0P o p t [W ] V 1 0 2 Q 1 2 3 A - 9 4 0 1 2 3 4 I F [A ] 1.4 1.6 1.8 2.0 2.2 V F [V ] V 1 0 2 Q 1 2 3 A - 9 4 0 0 20 40 60 80 T A [° C ] 0.0 0.5 1.0 1.5 2.0 2.5I F [A ]

Version 1.1 V102Q123A-940 2020-12-16 5 Permissible Pulse Handling Capability IF = f(t p), T A = 25 °C, duty cycle D = parameter Permissible Pulse Handling Capability IF = f(t p), T A = 85 °C, duty cycle D = parameter Far-Field Illumination Pattern 6) page 14 Irel = f(ϕ), tp = 300 µs; D = 0.05, TA= 25°C V 1 0 2 Q 1 2 3 A - 9 4 0 10-4 10-3 0.01 0.1 1 10 t p [s ] 4I F [A ] : D = 1 : D = 0,5 : D = 0,2 : D = 0,1 : D = 0,05 : D = 0,02 : D = 0,01 : D = 0,005 V 1 0 2 Q 1 2 3 A - 9 4 0 10-4 10-3 0.01 0.1 1 10 t p [s ] 4I F [A ] : D = 1 : D = 0,5 : D =0,2 : D =0,1 : D =0,05 : D =0,02 : D =0,01 : D =0,005

Version 1.1 V102Q123A-940 Diagrams Photodiode Relative Spectral Sensitivity 6) page 14 Srel = f(λ), VR = 3.3 V, TA = 25°C Photocurrent 6) page 14 IP = f(Ee), VR = 3.3 V, T A= 25°C V 1 0 2 Q 1 2 3 A - 9 4 0 400 600 800 1000 λ [n m ] 100S r e l [% ] V 1 0 2 Q 1 2 3 A - 9 4 0 0.01 0.05 0.1 0.5 E e [µ/c m ² ] 0.01 0.05 0.1 I p [µA ]

Version 1.1 V102Q123A-940 2020-12-16 7 Dark Current 6) page 14 IR = f(VR) Photocurrent 6) page 14 IP,rel = f (IF, emitter ), VR = 3.3 V, T A= 25°C Dark Current 6) page 14 IR = f(TA), VR = 3.3 V Capacitance 6) page 14 C = f(V R), f = 1 MHz, T A= 25°C V 1 0 2 Q 1 2 3 A - 9 4 0 0 1 2 3 4 5 V R [V ] 100 120I R [p A ] /s49/s48 /s45/s49 /s49/s48 /s48 /s49/s48 /s49 /s49/s48 /s45/s50 /s49/s48 /s45/s49 /s49/s48 /s48 /s86/s49/s48/s50/s81/s49/s50/s51/s65/s45/s57/s52/s48 /s73 /s80 /s32/s47/s32/s73 /s80/s32/s40/s50/s46/s55/s32/s65/s41 /s73 /s70/s44/s32/s101/s109/s105/s116/s116/s101/s114 /s32/s91/s65/s93 V 1 0 2 Q 1 2 3 A - 9 4 0 0 20 40 60 80 T A [° C ] 0.01 0.1 100I R [n A ] V 1 0 2 Q 1 2 3 A - 9 4 0 10-3 0.01 0.1 1 V R [V ] 0.0 0.5 1.0 1.5 2.0 C [p F ]

Version 1.1 V102Q123A-940 Dimensional Drawing 7) page 14 Dimensions in mm. Approximate Weight: 20 mg Electrical internal circuit

Version 1.1 V102Q123A-940 2020-12-16 9 Recommended Solder Pad Dimensions in mm. Reflow Soldering Profile Product complies to MSL Level 3 acc. to JEDEC J-STD -020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L

Version 1.1 V102Q123A-940 Taping Dimensions in mm. OHA04612 Profil-Charakteristik Profile Feature Ramp-up Rate to Preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS tL tP TL TP 100 12060 10 20 30 80 100 217 2 3 245 260 3 6 Time 25 °C to T P Time within 5 °C of the specified peak temperature T P - 5 K Ramp-down Rate* T P to 100 °C All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/ Dt: Dt max. 5 s; fulfillment for the whole T-range Ramp-up Rate to Peak*) TSmax to T P Liquidus Temperature Peak Temperature Time above Liquidus temperature Symbol Symbol Einheit Unit Pb-Free (SnAgCu) Assembly Minimum MaximumRecommendation K/s K/s s s s s 480

Version 1.1 V102Q123A-940 2020-12-16 11 Reel dimensions [mm] Reel dimensions in mm Tape and Reel 12 mm tape with 2000 pcs. on ∅ 180 mm or 8000 pcs. on ∅ 330 mm reel A W Nmin W1 W2max 180 12 60 12.4 18.4 330 12 60 12.4 18.4

Version 1.1 V102Q123A-940 Barcode-Product-Label (BPL) Dry Packing Process and Materials Note: Moisture-sensitive product is packed in a dry bag c ontaining desiccant and a humidity card. Regarding dry pack you will find further informatio n in the internet. Here you will also find the norm ative references like JEDEC. OHA04563 (G) GROUP: 1234567890(1T) LOT NO: (9D) D/C: 1234 (X) PROD NO: 123456789 (6P) BATCH NO: 1234567890 LX XXXX RoHS Compliant BIN1: XX-XX-X-XXX-X ML X Temp ST XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X 9999(Q)QTY: Semiconductors OSRAM Opto XX-XX-X-X EXAMPLE X_X123_1234.1234 XX_X123_1234.1234 X EXAMPLEEXAMPLEEXAMPLE XXX X_X123_1234.1234 X XX-XX-X-X EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE XXXXXX X_X123_1234.1234 XX_X123_1234.1234 X XX-XX-X-XXX-XX-X-X EXAMPLE Pack: RXX XXX X_X123_1234.1234 X XX-XX-X-X EXAMPLE Pack: RXXPack: RXX DEMY DEMY EXAMPLE 1234 EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE 1234 EXAMPLE Pack: RXX DEMY EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE (9D) D/C: EXAMPLEEXAMPLEEXAMPLEEXAMPLE (9D) D/C: 1234 EXAMPLEEXAMPLEEXAMPLEEXAMPLE (9D) D/C: EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE12345678901234567890EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE(6P) BATCH NO: 1234567890 Semiconductors EXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLEEXAMPLE(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890EXAMPLE SemiconductorsSemiconductors OSRAM OptoOSRAM Opto EXAMPLEEXAMPLE1234567890 X_X123_1234.1234 X Pack: RXX DEMY X_X123_1234.1234 X (9D) D/C: 1234(9D) D/C: 1234567890(6P) BATCH NO: 1234567890 OSRAM Opto XXX X_X123_1234.1234 X XX-XX-X-X Pack: RXX DEMY Semiconductors OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, Mo isture Leve l 3 Floor time 168 Hours M oisture L evel Floor time 6 H our s Hum idity Indic ator Card is > 10 when read at 23 ˚ C ± 5 ˚C, o r reflow, v apor-pha se reflow , or equiv alent p roces sing eak p ackage 2. A fter this bag is o pen ed, devices th at w ill be subjecte d to infrared Shelf life i n seale d bag: 24 mo nths at < 40 ˚C and < 90 relative humidit y (RH). Mo isture Level 5a at facto ry con dition s of (if blank, sea l date is i dentical wit h date code). a) Mo unted wi thin b) S tored at body te m 3. Devices requ ire baking , before m ounting, if: Bag seal da te M oisture Level M oisture Leve l 2 Mo isture L evel 2 a4. If baking is re quir ed, b) 2a or 2b is not me Date and time opened: re ference IPC /JEDE C J-ST D-033 for bake procedu re. Floo r time s ee below If blank, see ba r code labe l Flo or time > 1 Yea r Floor time

1 Year

eks10% RH M oistu re Level 4 M oisture Level 5 ˚C). OP TO SEM ICONDU CTORS MO IST URE SENSITIVE This bag contains CAUTION Floor time

2 Hou

30 ˚C/60% RH. LEVEL If bl ank, see bar co de la bel

Version 1.1 V102Q123A-940 2020-12-16 13 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reser ved. Due to technical requirements components may c ontain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on the OSRAM OS website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you fo r any costs incurred. Product and functional safety devices/applications or medical devices/applications OSRAM OS components are not developed, constructed or tested for the application as safety relevant co mponent or for the application in medical devices. OSRAM OS products are not qualified at module and system level for such application. In case Buyer – or Customer supplied by Buyer – con siders using OSRAM OS components in product safety devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales Partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyse and coordinate the customer-specific request between OSRAM OS and Buyer and/or Customer.

Version 1.1 V102Q123A-940 Glossary 1) Brightness: The brightness values are measured with a tolerance of ±11%. 2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse operation is not allowed. 3) Photocurrent: The photocurrent values are measured (by irradiatin g the devices with a homogenous light source and applying a voltage to the device) with a tolerance of ±11 %. 4) Forward voltage: The forward voltages are measured with a tolerance of ±0.1 V. 5) Wavelength: The wavelengths are measured with a tolerance of ±1 nm. 6) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not nec essarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 7) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.

Version 1.1 V102Q123A-940 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserd.