UPT211 NJSEMI | Alldatasheet

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, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 POWER TRANSISTORS

2 Amp, 150V, Planar NPN

FEATURES

  • Collector-Base Voltage: up to 150V
  • Peak Collector Current: 5A
  • Turn-on Time: 130ns
  • Turn-off Time: 300ns ABSOLUTE MAXIMUM RATINGS CEO Collector-Base Voltage, Vc Collector-Emitter Voltage, v" Emitter-Base Voltage, V£BO D.C. Collector Current, lc Peak Collector Current, lc Base Current, IB Power Dissipation 25'C Ambient 100"C Case Thermal Resistance, 6j_c Operating and Storage Temperature Range UPTI11 60V 40V .... UPT112 ... 80V . 60V ... 5V 1A . UPTI1J 100V 80V .85W . 25°C/W UPTI1* 120V .... 100V UPT115 150V 100V MECHANICAL SPECIFICATIONS f 1 A e i -i. . c UPT211 UP »- D J ',5. V^ ,- EMITTER rE ' S-, *r."t'/\\-K -F L- -: i-- r212 UPT213 UPTZ14 UPT215 A B C E F G H J K L INCHES 335-370 305- 335 210- 260 1 5 WIN 010- 030 ni7 * 002 017 * 001 200 100 0311 003 02<>- 045 100 MILLIMETERS 8 51-940 7 75-8 51 609-660 38 10 WIN 0 254-0 76;? .„ . 051 432 * 025 508 2 54 787t 076 736-1 14 254 TO-S I NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

UPT211 UPT212 UPT213 UPT214 UPT215 ELECTRICAL SPECIFICATIONS <»t 2S«C unless noted) Test D.C, Current Gain (Note 1) D.C. Current Gain (Note 1) D.C. Current Gain (Note 1) Collector Saturation Voltage (Note 1) Base Saturation Voltage (Note 1) Collector-Emitter Breakdown Voltage (Note 1) UPT211 UPT212 UPT213 UPT214 UPT215 Collector-Emitter Breakdown Voltage (Note 1) UPT2U UPT212 UPT213 UPT214-5 Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current, 150°C Emitter-Base Cutoff Current Output Capacitance Gain-Bandwidth Product Switching Speeds Tum-°n Time Turn-off Time Symbol hFE "fE VCE (sat) vet (sat) BVCEfi BVCEO ICER ICE* 'EBO cob fi *», toff Mm. Max. 1 10 Typ. — > 100 120 150 100 1.0 1.2 1.0 SO 70 Typ. 130 Typ. 300 Typ. Units Vdc Vdc Vdc Vdc pAdc mAdc ,<Adc pf MHz ns ns Test Conditions c = 0.5A, VCE = 5VdC c = 2A, VCE = 5Vdc c = 5A,VCE = 5Vdc c = 2A, I8 - 0.2A c = 2A, 1, = 0.2A lc = lOmAdc; RBE = lOOn lc = lOmAdc VC£ = rated BVceo, RBE = 100S Vce = rated BVC£O, RBE = 100ft, T = 150'C VEB = SVdc VCB = lOVdc, IE = 0, f = 1MHz lc = 0.1Adc, VCE = SVdc, f = 10MHz IC=:2A Noli: 1. Pulse width = 300 «i: duty cycle * Mjximum Safe Operating Area UPT2I1-215 D.C. Current Glin vs. Collector Current 12 5 10 20 50 100 V, t — COLLECTOR - EMITTER VOLTAGE (V) — COLLECTOR CURRENT tA) Switching Spied Circuit M I »n son T L 10,« 1500 250* 1