UP1586

UP1586 UPI | Alldatasheet

Document overview

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Technical content

Features

† †† †† Notebook and Subnotebook System Power Supplies † †† †† 3-4 Cell Li-Ion Battery-Power Devices † †† †† Dual Output Supplies for DSP, Memory, Logic and Microprocessor Note: uPI products are compatible with the current IPC/JEDEC J-STD-020 requirements. They are halogen-free, RoHS compliant and 100% matte tin (Sn) plating that are suitable for use in SnPb or Pb-free soldering processes.

Ordering Information

25 PGND

2 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com Typical Application Circuit VFB1 TONSEL ENTRIP1 VREF ENTRIP2 VFB2VO2 BOOT2 LDO3 UGATE2 PHASE2 LGATE2 NC / ENC VIN LDO5 GND SKIPSEL EN0 VO1 POK BOOT1 UGATE1 PHASE1 LGATE1 VIN = 6V~26V VO1 = 5V EN0 VIN VREF VO2 = 3.3 3.3V/100mA 5V/100mA VREG5 VIN POK VREG5 GND ENC (uP1586Q Only) VFB1 TONSEL ENTRIP1 VREF ENTRIP2 VFB2VO2 BOOT2 LDO3 UGATE2 PHASE2 LGATE2 SECFB VIN LDO5 GND SKIPSEL EN0 VO1 POK BOOT1 UGATE1 PHASE1 LGATE1 VIN = 6V~26V VO1 = 5V EN0 VIN VREF VO2 = 3.3V 3.3V/100mA 5V/100mA VREG5 VIN POK VREG5 GND VCP VO1 uP1586P/Q uP1586R

3uP1586-DS-P0000, Mar. 2013 www.upi-semi.com . oNe m aNn o i t c n u F n i P 11 P I R T N E . g n i t t e SP C Od n a e l b a n E 1 k c u B ro f d l o h s e r h t t e s o t D N Go t n i p s i h t m o r f r o t s i s e r t c e n n o C R 1 k c u b s u o n o r h c n y s) N O ( S D . 1 k c u B n w o d t u h s o t D N Go t n i p s i h t t c e n n o C . P C O 21 B F V . t u p n I k c a b d e e F 1 k c u B re d i v i d r o t s i s e r A . r e i f i l p m a r o r r e e h t o t t u p n i g n i t r e v n i e ht s i n i p s i h T . e g a t l o v r o t a l u g e r t e s o t d e s u s i D N Go t t u p t u om o r f 3F E R V . t u p t u O e g a t l o V e c n e r e f e RV 2 si h T . D N G o t r o t i c a p a c c i m a r e c F u 2 2 . 0 a h t i w n i p s i h t s s a p y B . s d a o l l a n r e t x e r o f t n e r r u c A u 0 0 1 o t p u g n i c r u o s f o e l b a p a c si n i p 4L E S N O T . n i P t c e l e S e m i T - n O . 3 O D L r o 5 O D L o t n i p s i h t t c e n n o C : k 0 0 5 / k 0 0 4 . n i p s i h t g n i t a o l F : k 5 7 3 / k 0 0 3 . D N Go t n i p s i h t t c e n n o C : k 0 5 2 / k 0 0 2 52 B F V . t u p n I k c a b d e e F 2 k c u B re d i v i d r o t s i s e r A . r e i f i l p m a r o r r e e h t o t t u p n i g n i t r e v n i e ht s i n i p s i h T . e g a t l o v r o t a l u g e r t e s o t d e s u s i D N Go t t u p t u om o r f 62 P I R T N E . g n i t t e SP C Od n a e l b a n E 2 k c u B ro f d l o h s e r h t t e s o t D N Go t n i p s i h t m o r f r o t s i s e r t c e n n o C R 2 k c u b s u o n o r h c n y s) N O ( S D . 2 k c u B n w o d t u h s o t D N Go t n i p s i h t t c e n n o C . P C O 72 O V . 2 k c u B f o t u p t u O .s t u p n i e g r a h c s i d t u p t u o d n a t u p n I k c a b d e e f e g a t l o v d e x i f s as k r o w n i p s i h T . y l e v i t c e p s e r t u p n i r e w o p n r u t e r r e v o h c t i w s V 3 . 3 s a s k r o w os l a 2 O V 83 O D L . O D LV 3 . 3 l a n r e t n I f o t u p t u O ro f t n e r r u c t u p t u o A m 0 0 1 g n i c r u o s f o e l b a p a c s i 3 O D L e h T . F u 7 . 4m u m i n i ma h t i w n i p s i h t s s a p y B . s d a o l l a n r e t x e

92 T O O B

. 2 k c u B f o r e v i r D e t a GT E F S O M r e p p Ug n i t a o l F e h t r o f y l p p u Sp a r t s t o o B e h t t c e n n o C C r o t i c a p a c p a r t s t o o bT O O B .n i p 2 E S A H P e h t d n a n i p 2 T O O B n e e w t e b ) F u 7 4 . 0 o t F u 1 . 0 . p y t ( C e h t e c a l PT O O B . C I e h t r a e n

012 E T A G U

. 2 k c u B r o f t u p t u O r e v i r De t a GT E F S O M r e p p U re p p u f o e t a g e h t o t n i p s i h t t c e n n o C e n i m r e t e d o t y r t i u c r i c n o i t c e t o r p h g u o r h t - t o o h s e v i t p a d ae h t y b d e r o t i n o m s i n i p s i h T . T E F S O M . f f o d e n r u t s a h T E F S O M r e p p u e h t n e h w

112 E S A H P

. 2 k c u B r o f e d o Nh c t i w S ni a r d e h t d n a T E F S O M r e p p u e h t f o e c r u o s e h t o t n i p s i h t t c e n n o C o s l a s i n i p s i h T . r e v i r d 2 E T A G Ue h t r o f k n i s e h t s a d e s u s i n i p s i h T . T E F S O M r e w o l e h t f o re p p u e h t n e h we n i m r e t e d o t y r t i u c r i c n o i t c e t o r p h g u o r h t - t o o h s e v i t p a d ae h t y b d e r o t i n o m o t d e d n e mm o c e r s i d n u o r g d n a n i p s i h t n e e w t e b e d o i d y k t t o h c SA . f f o d e n r u t s a h T E F S O M . m e t s y s y l p p u s r e w o p a n i n o mm o c s i h c i h w e g a t l o v t n e i s n a r t e v i t a g e n e c u d e r

212 E T A G L

. 2 k c u B r o f t u p t u O r e v i r D e t a GT E F S O M r e w o L e d i s r e w o l f o e t a g e h t o t n i p s i h t t c e n n o C e n i m r e t e d o t y r t i u c r i c n o i t c e t o r p h g u o r h t - t o o h s e v i t p a d ae h t y b d e r o t i n o m s i n i p s i h T . T E F S O M . f f o d e n r u t s a h T E F S O M r e w o l e h t n e h w

310 N E

. e l b a n EO D L . s l e n n a h c r e h c t i w s n o n r u t o t y d a e r d n a s O D L h t o b e l b a n E : 5 O DL r o 3 O D L . t i u c r i c l l a e l b a s i D : D N G 4 1 L E S P I K S ) R / P 6 8 5 1 P u ( . n i P n o i t c e l e S e d o Mn o i t a r e p O . 5 O D L r o 3 O D L o t n i p s i h t t c e n n o C : e d o Mc i n o s a r t l U . n i p s i h t g n i t a o l F : e d o Mn o i t a l u m E e d o i D . D N Go t n i p s i h t t c e n n o C : y l n OMWP L E S P I K S ) Q 6 8 5 1 P u ( . n i P n o i t c e l e S e d o Mn o i t a r e p O . 5 O D L r o 3 O D L o t n i p s i h t t c e n n o C : e d o Mc i n o s a r t l U . D N Go t n i p s i h t t c e n n o C : e d o Mn o i t a l u m E e d o i D . n i p s i h t g n i t a o l F : y l n OMWP 51D N G . C I e h t r o f d n u o r G l a n g i S si h t e i T . n i p s i h t o t t c e p s e r h t i w d e r u s a e me r a s l e v e l s e g a t l o v l l A . e l b a l i a v a n o i t c e n n o c e c n a d e p m i t s e w o l e h t h g u o r h t e n a l p /d n a l s i d n u o r g e h t o t n i p Functional Pin Description

4 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com . oNe m aNn o i t c n u F n i P 61N I V . t u p n I y l p p u S tc e n n o C . s r o t a l u g e r O D L V 3 . 3 d n a V 5 l a n r e t n i e h t f o t u p n i e h t si n i p s i h T . t u p t u o r e t p a d a C A r o y r e t t a b e h t o t N I V 715 O D L . O D LV 5 l a n r e t n I f o t u p t u O ro f t n e r r u c t u p t u o A m 0 0 1 g n i c r u o s f o e l b a p a c s i 5 O D L e h T . F u 7 . 4m u m i n i ma h t i w n i p s i h t s s a p y B . s d a o l l a n r e t x e 8 1 ) P 6 8 5 1 P u ( C N . n o i t c e n n o C l a n r e t n I t o N ) Q 6 8 5 1 P u ( C N E. t u p n I e l b a n E x k c u B .s l e n n a h c r e h c t i w s h t o b n o n r u t o t 5 O D L r o 3 O D L o t p u n i p s i h t l lu P . m e h t n w o d t u h s o t D N Go t n i p s i h t t c e n n o C B F C E S ) R 6 8 5 1 P u ( . n i P k c a b d e e F p m u P e g n a h C e g r a h c l a n r e t x e l a n o i t p o e h t r o t i n o m o t d e s u s i B F C E S e h T . tu p t u o e h t t c e t e d o t D N G o t t u p t u o p m u p e g n a h c e h t m o r f r e d i v i de v i t s i s e r a t c e n n o C . p m u p e h t h s e r f e r o t s r u c c o e s l u p c i n o s a r t l u n a , d l o h s e r h t k c a b d ee f s t i w o l e b s p o r dB F C E S f I . 2 E T A G L r o 1 E T A G L y b n e v i r d p m u p e g r a h c

911 E T A G L

. 1 k c u B r o f t u p t u O r e v i r De t a GT E F S O M r e w o L re w o l f o e t a g e h t o t n i p s i h t t c e n n o C o t y r t i u c r i c n o i t c e t o r p h g u o r h t - t o o h s e v i t p a d a e h t y b d e r ot i n o ms i n i p s i h T . T E F S O M . f f o d e n r u t s a h T E F S O M r e w o l e h t n e h w e n i m r e t e d

021 E S A H P

. 1 k c u B r o f e d o Nh c t i w S e h t d n a T E F S O M r e p p u e h t f o e c r u o s e h t o t n i p s i h t t c e n n o C si n i p s i h T . r e v i r d 1 E T A G U e h t r o f k n i s e h t s a d e s u s i n i p s i h T . TE F S O M r e w o l e h t f o n i a r d e h t n e h we n i m r e t e d o t y r t i u c r i c n o i t c e t o r p h g u o r h t - t o o h s e v i t p a d ae h t y b d e r o t i n o mo s l a si D N Gd n a n i p s i h t n e e w t e b e d o i d y k t t o h c SA . f f o d e n r u t s a h T E F S OM r e p p u yl p p u s r e w o p a n i n o mm o c s i h c i h we g a t l o v t n e i s n a r t e v i t a g e n e c u d e r o t d e d n e mm o c e r . m e t s y s 1 2 1 E T A G U . 1 k c u B r o f t u p t u O r e v i r D e t a GT E F S O M r e p p U re p p u f o e t a g e h t o t n i p s i h t t c e n n o C o t y r t i u c r i c n o i t c e t o r p h g u o r h t - t o o h s e v i t p a d a e h t y b d e r ot i n o ms i n i p s i h T . T E F S O M . f f o d e n r u t s a h T E F S O M r e p p u e h t n e h w e n i m r e t e d

221 T O O B

y l p p u Sp a r t s t o o B 1 k c u B f o r e v i r D e t a GT E F S O M r e p p Ug n i t a o l F e h t r o f tc e n n o C . C r o t i c a p a c p a r t s t o o b e h tT O O B ) F u 7 4 . 0 o t F u 1 . 0 . p y t (1E S A H P e h t d n a n i p 1 T O O B n e e w t e b C e h t e c a l P . n i pT O O B . C I e h t r a e n d e c a l p s i 32K O P . n o i t a c i d n I K O r e w o P r o f t u p t u On i a r Dn e p O ht i we c n a d e p m i h g i h o t t e s s i n i p s i h T e v o b a e r a s t u p t u o s S P M S h t o b d n a s e t e l p m o c e l c y c t r a t s - t f o sr e t f a y a l e d e m i t e t a u q e d a ni s i t u p t u o r e h t i e n e h w y l e t a i d e mm i w o l d e l l u p s i t I . s e g a t l o v n o i t a l u g e r l a n i m o n e h t f o% 5 9 . n o i t c e t o r p r o n w o d t u h s , y b d n a t s , t r a t s - t f o s 421 O V . 1 k c u B f o t u p t u O 1 O V . s t u p n i e g r a h c s i d t u p t u o d n a s t u p n i e g a t l o v d e x i f s a s k ro w n i p s i h T . y l e v i t c e p s e r t u p n i r e w o p n r u t e r r e v o h c t i w s V 5 s a s k r o w o s la 52d a P d e s o p x E. d n u o r G d e r e d l o s l l e w e b d l u o h s d n a h t a p n o i t c u d n o c t a e h s e t a n i m o d da p d e s o p x e e h T . e c n a m r o f r e p l a m r e h t l a m i t p o r o f B C P o t Functional Pin Description

5uP1586-DS-P0000, Mar. 2013 www.upi-semi.com Functional Block Diagram Switcher Controller POK Latch off Control Oscillator Soft Start Control ENTRIP2 VFB2 VO2 BOOT2 UGATE2 PHASE2 LGATE2 VFB1 TONSEL ENTRIP1 VREF VIN LDO5 SKIPSEL EN0 VO1 BOOT1 UGATE1 PHASE1 LGATE1 EN EN LDO3 EN

150 O C

/140O C Switcher Controller GND ENC (uP1586Q) /SECFB (uP1586R

and makes the design easier and robust. Table 1. Enabling State

0 NE1 P I R T NE2 P I R T NEF E RV5 O DL3 O DL1 H C 2H C

Table 2. TONSEL Connection and Switching Frequency

1 HC2 H C

3 O D L r o 5 O DLz H K 0 04z H K 0 0 5

mode is selected by SKIPSEL pin. output capacitor to the level that requires the next on cycle. losses are reduced at light load. 3.3V supply for the notebook system during standby mode. VO1 to LDO5 and shuts down the LDO5 simultaneously. decreases the power dissipation from battery. rise above 95% of their nominal regulation voltage.

7uP1586-DS-P0000, Mar. 2013 www.upi-semi.com Over Current Protection The uP1586 has cycle-by-cycle over current limit control. The inductor current is monitored during the off state and the controller keeps the off state when the inductor current is larger than the over current trip level. In order to provide both good accuracy and cost effective solution, the uP1586 supports temperature compensated MOSFET R DS(on) sensing. ENTRIPx pin should be connected to GND through the trip voltage setting resistor, R TRIP. ENTRIPx terminal sources ITRIP current, which is 10uA typically at room temperature, and the trip level is set to the OCL trip voltage VTRIP as below. Note that the VTRIP is limited up to about 300mV(Max.) internally. )ON(DSOCP TRIPTRIP TRIP RI10 )uA(I )k (R)mV(V ×=×Ω= )uA(I 10RI)k (R TRIP )ON(DSOCP TRIP ××=Ω The voltage between GND pin and PHASEx pin monitors the inductor current so that PHASEx pin should be connected to the drain terminal of the lower MOSFET properly. ITRIP has 4500 ppm/O C temperature slope to compensate the temperature dependency of the lower MOSFET R DS(on). GND is used as the positive current sensing node so that GND should be connected to the proper current sensing device, i.e. the source terminal of the lower MOSFET. When the comparison is done during the off state, VTRIP sets valley level of the inductor current. Therefore, the load current at over current threshold, ILIM, can be calculated as follows: IN OUTOUTIN DSON TRIP RIPPLE DSON TRIP LIM V V)VV ( fL2 R V I R VI In an over current condition, the current to the load exceeds the current to the output capacitor. Thus the output voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and shuts down both channels. Over/Under Voltage Protection The uP1586 monitors the feedback voltage to detect over and under voltage. When the feedback voltage becomes higher than 120% target voltage, the OVP circuit latches the upper MOSFET off and the lower MOSFET on. When the feedback voltage becomes lower than 60% target voltage, the UVP occurs after 30us UVP delay, the uP1586 latches off both side MOSFETs, and shuts off both drivers Functional Description of another channel. This function is enabled after 3ms following ENTRIPx has become high. UVLO Protection The uP1586 has LDO5 under voltage lock out protection (UVLO). When the LDO5 voltage is lower than UVLO threshold voltage, both SMPS are turned off. This is a non-latch protection. Over Temperature Protection The uP1586 monitors the temperature of itself. If the temperature exceeds typical 150O C, the uP1586 is turned off excluding LDOs. This is a latch protection. Charge Pump (SECFB) As shown in the Figure1, the external charge pump is driven by LGATEx. The total charge pump voltage, VCP , is DLGATExCP V4V2VOxV ×−×+= where VLGATEx is the peak voltage of the LGATEx driver which is equal to LDO5, VD is the forward voltage dropped across the Schottky diode. The SECFB pin in the uP1586R is used to monitor the charge pump via a resistive voltage divider to generate DC voltage and the clock driver uses VOx as its power supply. In the event where SECFB drops below its feedback threshold, an ultrasonic pulse will occur to refresh the charge pump driven by LGATEx. If there’s an overload on the charge pump in which SECFB can not reach more than its feedback threshold, the controller will enter Ultrasonic Mode. Special care should be taken to ensure that enough normal ripple voltage is present on each cycle to prevent charge pump shutdown. The robustness of the charge pump can be increased by reducing the charge pump decoupling capacitor and placing a small ceramic capacitor, Cp (47pF to 220pF), in parallel with the upper leg of the SECFB resistor feedback network, RCP1 , as shown below in Figure 1 SECFB uP1586R VOx R CP1 Charge Pump LGATEx C4 C P R CP2 Figure 1.

8 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com r e t e m a r aPl o b m ySs n o i t i d n o C t s eTn iMp yTx a M st i n U R O P t e s e R n O r e w o PN IVV R O P _ N I g n i s iR- -1 .56 . 5 V s i s e r e t s yH- -5 .0- - t e s e R n O r e w o P 5 O DLV R O P _ 5 O D L g n i s iR- -3 .48 . 4 V s i s e r e t s yH- -2 .0- - t n e r r u C y l p p u S t n e r r u C y l p p u SN IVI N I V , V 0 = 2 O V , V 0 = 1 O V , d a o L o N , t n e r r u c N I V V 5 0 . 2 = 2 B F V = 1 B F V , V 2 = x P I R T N E--5 5 .01 A m ( Note 1) PHASEx to GND UGATEx to PHASEx LGATEx to GND ESD Rating ( Note 2) Package Thermal Resistance (Note 3) Power Dissipation, PD @ TA = 25°C (Note 4) Absolute Maximum Rating Thermal Information Recommended Operation Conditions

Electrical Characteristics

Electrical characteristics over recommended free-air temperature range, VIN=12V, TA = 25O C. (Unless otherwise noted)

9uP1586-DS-P0000, Mar. 2013 www.upi-semi.com r e t e m a r aPl o b m ySs n o i t i d n o C t s eTn iMp yTx a M st i n U t n e r r u C y b d n a t SN IVI Y B T S N I V x P I R T N E , V 1 = 0 N E , d a o L o N , t n e r r u c N I V V 0 = --0 020 04A u t n e r r u C n w o d t u h SN IVI D S V 0 = x P I R T N E = 0 N E , d a o L o N , t n e r r u c N IV- -- -0 3A u t u p t u OF E R V e g a t l o V t u p t u OF E RVV F E R V I F E R VA 0=8 9 .10 0 .22 0 . 2 V I < A u 5 -F E R V A u 0 0 1<7 9 .10 0 .23 0 . 2 t u p t u O5 O D L e g a t l o V t u p t u O5 O DLV 5 O D L I , D N G=C N E 5 O D L A m 0 0 1<8 .40 .52 . 5 VI , D N G=C N E 5 O D L V < V 7 , A m 0 0 1 <N I V 6 2<5 7 .40 .55 2 . 5 I , D N G=C N E 5 O D L V < V 6 , A m 0 5 <N I V 6 2<5 7 .40 .55 2 . 5 t n e r r u C t u p t u O5 O DLI 5 O D L V , D N G=C N E 5 O D L I , V 5 . 4 =3 O D L A m 0=- -0 51- -A m d l o h s e r h T r e v O h c t i wSV W S V 5 H T n o s n r uT3 5 .49 6 .45 8 . 4 V s i s e r e t s yH- -4 .0- - n o R r e v O h c t i w SV5R W S V 5 I , V 5 = 1 O V5 O D L A m 0 0 1=- -5 .1- - Ω t u p t u O3 O D L e g a t l o V t u p t u O3 O DLV 3 O D L I , D N G=C N E 3 O D L A m 0 0 1<0 2 .33 .36 4 . 3 VI , D N G=C N E 3 O D L V < V 7 , A m 0 0 1 <N I V 6 2<3 1 .33 .30 5 . 3 I , D N G=C N E 3 O D L V < V 6 , A m 0 5 <N I V 6 2<3 1 .33 .30 5 . 3 t n e r r u C t u p t u O3 O DLI 3 O D L V , D N G=C N E 3 O D L I , V 3 =5 O D L A m 0=- -0 01- -A m t u p t u O e g a t l o V e c n e r e f e R l a n r e t nIV F E R VI F E R V e t a t s n o f o g n i n n i g e b , A 0=8 9 .10 0 .22 0 .2V e g a t l o V n o i t a l u g e RB FVV x B F V I , e g a t l o v B FF E R V s u o u n i t n o c , A 0 = n o i t c u d n o c --0 0 .2- -V t n e r r u C t u p n I B FVI x B F V V 0 . 2 = x B FV0 2-- -0 2A n t n e r r u C e g r a h c s i D x OVI g h c s i D V 5 . 0 = x O V , V 0 = x P I R T NE0 13 3- -A m e g a t l o VB F C ESV B F C E S ) R 6 8 5 1 P u(2 9 .10 0 .28 0 .2V s r e v i r D t u p t u O e c n a t s i s e RE T A GUR x E T A G U V , e c r u o Sx E T A G U - x T O O BV m 0 0 1=- -5 .48 Ω V , k n i Sx E S A H P - x E T A G UV m 0 0 1=- -8 .13 e c n a t s i s e RE T A GLR x E T A G L V , e c r u o Sx E T A G L - 5 O D LV m 0 0 1=- -5 .48 Ω V , k n i Sx E T A G L V m 0 0 1=- -2 .13 e m i T d a eDT D V 1 > x E T A G L o t V 1 < x E T A GU- -0 3- - s n V 1 > x E T A G U o t V 1 < x E T A GL- -0 3- - h c t i w S p a r t s t o o B l a n r e t n I g n i g r a h C t s o o B l a n r e t n I r o t s i s e R - n O h c t i w SR X T O O B I , x T O O B o t 5 O D Lx T O O B A m 0 1=- -0 8- - Ω

10 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com r e t e m a r aPl o b m ySs n o i t i d n o C t s eTn iMp yTx a M st i n U l o r t n o C y c n e u q e r F d n a y t u D 1 e m i t - n O1 HCT 1 1 N OV N I g n i t t e s z H k 0 0 2 , V 5 = 1 O V , V 2 1=- -0 8 02- -s n 2 e m i t - n O1 HCT 2 1 N OV N I g n i t t e s z H k 0 0 3 , V 5 = 1 O V , V 2 1=- -0 9 31- -s n 3 e m i t - n O1 HCT 3 1 N OV N I g n i t t e s z H k 0 0 4 , V 5 = 1 O V , V 2 1=- -0 4 01- -s n 1 e m i t - n O2 HCT 1 2 N OV N I g n i t t e s z H k 0 5 2 , V 3 . 3 = 2 O V , V 2 1=- -0 0 11- -s n 2 e m i t - n O2 HCT 2 2 N OV N I g n i t t e s z H k 5 7 3 , V 3 . 3 = 2 O V , V 2 1=- -0 37- -s n 3 e m i t - n O2 HCT 3 2 N OV N I g n i t t e s z H k 0 0 5 , V 3 . 3 = 2 O V , V 2 1=- -0 55- -s n e m i t - f f Om u m i n iMT N I M F F O --0 03- -s n t r a t s - t f o S y c n e u q e r FM SUF M S U M S U n i g n i t a r e p o S P MS5 2- -- -z H k e m i T S S l a n r e t nIT S S t r a t s - t f o s l a n r e t nI- -7 .1- -s m n o i t a c i d n I K O r e w o P d l o h s e r h T K OPV K O P H T g n i s iR7 80 93 9 s i s e r e t s yH- -5- - t n e r r u C k n i SK OPI X A M K O P V 5 . 0 = K OP5 21- -A m y a l e DK OPT L E D K O P h g i h o g K O P o t B F V f o% 0 9m o r f y a l eD- -0 05- -s u s n o i t i d n o Cg n i t t e S d n a d l o h s e r h T c i g o L e g a t l o V 0 NEV 0 N E d l o h s e r h t e g d e g n i s iR8 .0- -- - V d l o h s e r h t e g d e g n i l l aF- -- -3 . 0 e g a t l o V t u p n I x P I R T NEV x P I R T N E l e v e l f f o x S P M S / l e v e l w o l t l u a f r a e lC- -- -4 . 0 Vl e v e l n o x S P MS6 .0- -3 l e v e l f f o x S P M S / l e v e l h g i h t l u a f r a e lC5 .4- -- - g n i t t e S c i g o L L E S N O T e g a t l o V V N O T z H k 0 5 2 / z H k 0 02- -- -5 . 1 Vz H k 5 7 3 / z H k 0 039 .1- -1 . 2 z H k 0 0 5 / z H k 0 047 .2- -- - g n i t t e S c i g o L L E S P I K S e g a t l o V V P I K S y l n oMWP- -- -5 . 1 VM ED9 .1- -1 . 2 M SU7 .2- -- - t n e r r u C e c r u o S x P I R T NEI x P I R T N EV x P I R T N EV 1=4 .90 16 . 01A u . p m e T t n e r r u C x P I R T N E t n e i c i f f e o CC TN E I 5 2 f o s i s a b e h t n OO C- -0 0 54- - m p p /O C d l o h s e r h TC N E ) Q 6 8 5 1 P u ( e g a t l o VV C N E n w o d t u hS- -- -8 . 0 V e l b a nE9 .1- -- -

11uP1586-DS-P0000, Mar. 2013 www.upi-semi.com r e t e m a r aPl o b m ySs n o i t i d n o C t s eTn iMp yTx a M st i n U e s n e S t n e r r u C : n o i t c e t o r P t e s f f O . p m o CP COV f f o L C OV x P I R T N E0 1/8 -0 8V m g n i t t e S L C Om u m i x aMV x a m L C OV x P I R T N EV 2=5 815 025 22V m d l o h s e r h T t n e r r u C - o r eZV C Z x E S A H P - D NG- -3- -V m P V O&P V U : n o i t c e t o r P d l o h s e r h T p i r T P VOV P V O t c e t e d P VO5 110 215 21% y a l e D . p o r PP VOT L E D P V O --5- -s u d l o h s e r h T p i r T P VUV P V U t c e t e d P VU5 50 65 6% y a l e D . p o r PP VUT L E D P V U --0 1- -s u y a l e D e l b a n EP VUT N E P V U e l b a n e x P I R T N Em o rF- -4- -s m n w o d t u h S l a m r e h T d l o h s e r h T N D S l a m r e hTT N D S e r u t a r e p m e t n w o d t u hS- -0 51- - O C Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of JEDEC 51-3 thermal measurement standard. Note 4. The device is not guaranteed to function outside its operating conditions.

12 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com VOUT2 (2V/Div) POK (5V/Div) ENTRIP2 (1V/Div) LG2 (5V/Div) VOUT2 (2V/Div) POK (5V/Div) ENTRIP2 (1V/Div) VOUT1 (2V/Div) POK (5V/Div) ENTRIP1 (1V/Div) LG1 (5V/Div) VOUT1 (2V/Div) POK (5V/Div) ENTRIP1 (1V/Div) LDO5 (2V/Div) LDO3 (2V/Div) EN0 (1V/Div) POK (5V/Div) LDO5 (2V/Div) LDO3 (2V/Div) EN0 (1V/Div) POK (5V/Div) Typical Operation Characteristics Power On from EN0 1ms/Div IOUT1 = IOUT2 = 0A Power Off from EN0 1ms/Div IOUT1 = IOUT2 = 0A Power On from ENTRIP1 400us/Div IOUT1 = 0A Power Off from ENTRIP1 2ms/Div IOUT1 = 0A Power On from ENTRIP2 400us/Div IOUT2 = 0A Power Off from ENTRIP2 2ms/Div IOUT2 = 0A

13uP1586-DS-P0000, Mar. 2013 www.upi-semi.com 3.25 3.26 3.27 3.28 3.29 3.3 3.31 3.32 3.33 3.34 3.35 0.01 0.1 1 10 DEM USM CCM 4.95 4.96 4.97 4.98 4.99 5.00 5.01 5.02 5.03 5.04 5.05 0.01 0.1 1 10 DEM USM CCM 3.25 3.26 3.27 3.28 3.29 3.3 3.31 3.32 3.33 3.34 3.35 6 8 10 12 14 16 18 20 22 24 26 IOUT = 0A IOUT = 6A 4.95 4.96 4.97 4.98 4.99 5.00 5.01 5.02 5.03 5.04 5.05 6 8 10 12 14 16 18 20 22 24 26 IOUT = 0A IOUT = 6A ILX2 (5A/Div) IOUT2 (5A/Div) VOUT2 (100mV/Div) ILX1 (5A/Div) IOUT1 (5A/Div) VOUT1 (100mV/Div) Typical Operation Characteristics VO1 Load Transient ResponseC 40us/Div VIN = 12V, IOUT1 = 1A to 6A VO2 Load Transient ResponseC 40us/Div VIN = 12V, IOUT2 = 1A to 6A VO2 Load Regulation Output Current (A) Output Voltage (V) VO1 Load Regulation Output Current (A) Output Voltage (V) VO1 Line Regulation Input Voltage (V) Output Voltage (V) VO2 Line Regulation Input Voltage (V) Output Voltage (V)

14 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com 100 0.01 0.1 1 10 CCM DEM USM 100 0.01 0.1 1 10 CCM DEM USM 100 0.01 0.1 1 10 CCM DEM USM 100 0.01 0.1 1 10 CCM DEM USM 100 0.01 0.1 1 10 CCM DEM USM 100 0.01 0.1 1 10 CCM DEM USM VO1 Efficiency Output Current (A) VIN = 8V Efficiency (%) VO2 Efficiency Output Current (A) VIN = 8V Efficiency (%) Typical Operation Characteristics VO1 Efficiency Output Current (A) VIN = 12V Efficiency (%) VO2 Efficiency Output Current (A) VIN = 12V Efficiency (%) VO1 Efficiency Output Current (A) VIN = 20V Efficiency (%) VO2 Efficiency Output Current (A) VIN = 20V Efficiency (%)

15uP1586-DS-P0000, Mar. 2013 www.upi-semi.com

Application Information

The inductor plays an important role in step-down converters because it stores the energy from the input power rail and then releases the energy to the load. From the viewpoint of efficiency, the DC Resistance (DCR) of the inductor should be as small as possible to minimize the conduction loss. In addition, the inductor covers a significant proportion of the board space, so its size is also important. Low profile inductors can save board space especially when the height has a limitation. However, low DCR and low profile inductors usually cost ineffective. Additionally, larger inductance results in lower ripple current, which translates into the lower power loss. However, the inductor current rising time increases with inductance value. This means the transient response will be slower. Therefore, the inductor design is a trade-off between performance, size and cost. In general, the switching frequency (on-time) and operating point (% ripple or LIR) determine the inductor value as shown in the following equation: )MAX(LOAD xINON ILIR VOVtL × −×= where LIR is the ratio of the peak to peak ripple current to the average inductor current. Find a low loss inductor having the lowest possible DC resistance that fits in the allotted dimensions. Ferrite cores are often the best choice because powdered iron is inexpensive and can work well at 200kHz. The core must be large enough to avoid saturating at the peak inductor current (IPEAK ): )MAX(LOAD)MAX(LOADPEAK I2 LIRII ×= + The calculation above shall serve as a general reference. To further improve the transient response, the output inductance can be reduced even further. This needs to be considered along with the selection of the output capacitor. Output Capacitor Selection The capacitor value and ESR determine the amount of output voltage ripple and load transient response. Thus, the capacitor value must be greater than the largest value calculated from below equations: xOUT LOAD SOAR VOC2 LIV ×× ×Δ= () ⎟⎟ SWOUT MAXLOADP P fC8 1ESRILIRV where VSOAR are the allowable amount of undershoot voltage and overshoot voltage in the load transient, VP-P is the output ripple voltage. MOSFET Selection The majority of power loss in the step-down power conveter is the loss in the power MOSFETs. For low voltage high current applications, the duty cycle of the upper MOSFET is small. Therefore, the switching loss of the upper MOSFET is of concern. Power MOSFETs with lower total gate charge are preferred in such kind of application. However, the small duty cycle means the lower MOSFET is on for most of the switching cycle. Therefore, the conduction loss tends to dominate the total power loss of the converter. To improve the overall efficiency, MOSFETs with low RDS(ON) are preferred in the circuit design. In some cases, more than one MOSFET are connected in parallel to further decrease the on-state resistance. However, this depends on the MOSFET driver capability and the budget. Layout Considerations Layout is very important in high frequency switching converter designs, the PCB could radiate excessive noise and contribute to the converter instability with improper layout. Certain points must be considered before starting a layout. „ „„ „„ Place the filter capacitor close to the IC. „ „„ „„ Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high voltage switching node. „ „„ „„ Connections from the drivers to the respective gate of both MOSFETs should be as short as possible to reduce stray inductance. „ „„ „„ All sensitive analog traces and components such as VOx, VFBx, GND, ENTRIPx, POK, and TONSEL should be placed away from high voltage switching nodes such as PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. „ „„ „„ Place the ground terminals of VIN capacitor(s), VOx capacitor(s), and source of lower MOSFETs as close as possible. The PCB trace defined as PHASEx node, which connects to source of upper MOSFET, drain of lower MOSFET and high voltage side of the inductor, should be as short and wide as possible.

16 uP1586-DS-P0000, Mar. 2013 www.upi-semi.com

Package Information

1.Package Outline Unit Description: BSC: Basic. Represents theoretical exact dimension or dimension target MIN: Minimum dimension specified. MAX: Maximum dimension specified. REF: Reference. Represents dimension for reference use only. This value is not a device specification. TYP. Typical. Provided as a general value. This value is not a device specification. 2.Dimensions in Millimeters. 3.Drawing not to scale. 4.These dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm. VQFN4x4 - 24L 3.90 - 4.10 Pin 1 mark Bottom View - Exposed Pad 2.30 - 2.80 0.18 - 0.30 3.90 - 4.10 0.0 - 0.05 0.80 - 1.00

0.20 REF

17uP1586-DS-P0000, Mar. 2013 www.upi-semi.com Important Notice uPI and its subsidiaries reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. uPI products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment. However, no responsibility is assumed by uPI or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of uPI or its subsidiaries. COPYRIGHT ( C ) 2011, UPI SEMICONDUCTOR CORP. uPI Semiconductor Corp. Headquarter 9F.,No.5, Taiyuan 1st St. Zhubei City, Hsinchu Taiwan, R.O.C. uPI Semiconductor Corp. Sales Branch Office 12F-5, No. 408, Ruiguang Rd. Neihu District, Taipei Taiwan, R.O.C.