QM0008D UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power Tool Application Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary G S D Rev A.04 D063016 D
N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.0672 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=5A --- 260 310 mΩ VGS=4.5V , ID=3A --- 270 320 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.12 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=3A --- 5.4 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=5A --- 9.6 13.4 nC Qgs Gate-Source Charge --- 1.83 2.56 Qgd Gate-Drain Charge --- 1.85 2.6 Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3Ω ID=5A --- 1.4 2.8 ns Tr Rise Time --- 30.6 55 Td(off) Turn-Off Delay Time --- 11.2 22 Tf Fall Time --- 6 12 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 508 711 pF Coss Output Capacitance --- 29 41 Crss Reverse Transfer Capacitance --- 16.4 23 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 5.4 A ISM Pulsed Source Current 2,4 --- --- 11 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=5A , dI/dt=100A/µs , TJ=25℃ --- 20 --- nS Qrr Reverse Recovery Charge --- 19 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Ch 100V Fast Switching MOSFETs 0.0 2.0 4.0 6.0 8.0 0 1 2 3 4 5 VDS ,Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 0.5 1.5 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 TJ , Junction Temperature ( ℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 100V Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.02 0.05 0.1 0.2 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T DUTY=0.5 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform