QM0008K

QM0008K UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT23 Pin Configuration Product Summary Rev A.05 D061616 G S D

N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.067 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=1A --- 260 310 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.2 --- mV/ ℃ IDSS Drain-Source Leakage Current V DS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current V DS=80V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=1A --- 2.4 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2.8 5.6 Ω Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=1A --- 9.7 13.6 nC Qgs Gate-Source Charge --- 1.6 2.2 Qgd Gate-Drain Charge --- 1.7 2.4 Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3Ω ID=1A --- 1.6 3.2 ns Tr Rise Time --- 19 34 Td(off) Turn-Off Delay Time --- 13.6 27 Tf Fall Time --- 19 38 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 508 711 pF Coss Output Capacitance --- 29 41 Crss Reverse Transfer Capacitance --- 16.4 23 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 1.2 A ISM Pulsed Source Current 2,4 --- --- 5 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=1A , dI/dt=100A/µs , TJ=25℃ --- 14 --- nS Qrr Reverse Recovery Charge --- 9.3 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics

N-Ch 100V Fast Switching MOSFETs 0.0 1.0 2.0 3.0 4.0 5.0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 245 250 255 260 265 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=1A 0.4 0.8 1.2 1.6 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch 100V Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.00 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 VDS (V) ID (A) TA=25℃ Single Pulse 10ms 100ms DC 100us 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform