UP04601 PANASONIC | Alldatasheet
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1Publication date: December 2003 SJJ00233BED UP04601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification ■ Features
- Two elements incorporated into one package (Each transistor is separated)
- Reduction of the mounting area and assembly cost by one half ■ Basic Part Number
- 2SD0601A + 2SB0709A ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: 5C Internal Connection Tr1 Tr2 123 46 5 Parameter Symbol Rating Unit Tr1 Collector-base voltage V CBO 60 V (Emitter open) Collector-emitter voltage V CEO 50 V (Base open) Emitter-base voltage V EBO 7V (Collector open) Collector current I C 100 mA Peak collector current I CP 200 mA Tr2 Collector-base voltage V CBO −60 V (Emitter open) Collector-emitter voltage V CEO −50 V (Base open) Emitter-base voltage V EBO −7V (Collector open) Collector current I C −100 mA Peak collector current I CP −200 mA Overall Total power dissipation P T 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Unit: mm 1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) 3: Collector (Tr2) 6: Collector (Tr1) SSMini6-F1 Package (0.30) 0.10 ±0.02 654 123 5˚ 0.20+0.05 –0.02 1.60±0.050.55±0.05 0.10 max. 0 to 0.02 (0.20) 1.60±0.05 Display at No.1 lead (0.50)(0.50)
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- Tr2 ■ Electrical Characteristics Ta = 25°C ± 3°C
- Tr1 Common characteristics chart PT Ta 0 160 40 120 80 150 100 125 Total power dissipation PT (mW) Ambient temperature Ta (°C) Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) V CEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −7V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Forward current transfer ratio h FE VCE = −10 V, IC = −5 mA 180 390 Collector-emitter saturation voltage V CE(sat) IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V Transition frequency f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF (Common base, input open circuited) Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 06 0 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 05 0 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 07V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Forward current transfer ratio h FE VCE = 10 V, IC = 2 mA 180 390 Collector-emitter saturation voltage V CE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Characteristics charts of Tr1 IC VBE VCE(sat) IC hFE IC IC VCE IC IB IB VBE Cob VCB 01 2 84 Ta = 25°C 140 µA 120 µA 100 µA IB = 160 µA 80 µA 60 µA 40 µA 20 µA Collector-emitter voltage VCE (V) Collector current IC (mA) 0 0.8 0.4 1.2 160 120 VCE = 10 V Ta = 25°C Base current IB (mA) Collector current IC (mA) 00 . 8 0.2 0.4 0.6 Base-emitter voltage VBE (V) Base current IB (mA) VCE = 10 V Ta = 25°C 120 100 VCE = 10 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) 11 0 1 0 2 103 10−3 10−2 10−1
10 IC / IB = 10
Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 11 0 2 10310 400 160 240 320 Forward current transfer ratio hFE Collector current IC (mA) VCE = 10 V 25°C −25°C Ta = 75°C 01 0 2 0 3 0 4 0 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V)
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Characteristics charts of Tr2 IC VBE VCE(sat) IC hFE IC IC VCE IC IB IB VBE Cob VCB 0 −12−8−4 −120 −100 −80 −60 −40 −20 Ta = 25°C −250 µA −200 µA −150 µA −100 µA −50 µA IB = −300 µA Collector-emitter voltage VCE (V) Collector current IC (mA) 0 − 0.8− 0.4 −1.2 −160 −120 −80 −40 VCE = −10 V Ta = 25°C Base current IB (mA) Collector current IC (mA) VCE = −10 V Ta = 25°C Base-emitter voltage VBE (V) Base current IB (mA) −120 −100 −80 −60 −40 −20 VCE = −10 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) −1 −10 −102 −103 −10−3 −10−2 −10−1 −10 IC / IB = 10 Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 600 500 400 300 200 100 Forward current transfer ratio hFE Collector current IC (mA) VCE = −10 V 25°C −25°C Ta = 75°C 0 −10 −20 −30 −40 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V)
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