UP03383 PANASONIC | Alldatasheet
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1Publication date: December 2003 SJJ00255BED UP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits ■ Features
- Two elements incorporated into one package (Transistors with built-in resistor)
- Reduction of the mounting area and assembly cost by one half ■ Basic Part Number
- UNR2213 + UNR211F ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: DV Internal Connection Tr2Tr1 R1R2 R2 Parameter Symbol Rating Unit Tr1 Collector-base voltage V CBO 50 V (Emitter open) Collector-emitter voltage V CEO 50 V (Base open) Collector current I C 100 mA Tr2 Collector-base voltage V CBO −50 V (Emitter open) Collector-emitter voltage V CEO −50 V (Base open) Collector current I C −100 mA Overall Total power dissipation P T 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Unit: mm –0.02 +0.05 0.20(0.30) (0.50) 123 (0.50) 0.55±0.05 0 to 0.02 0.10 max 1.00±0.05 1.60±0.05 0.10±0.02 Display at No.1 lead (0.20) 1.60±0.05 1.20±0.05(0.20) 1: Emitter (Tr1) 4: Collector (Tr2) 2: Base (Tr1) 5: Collector (Tr1) 3: Emitter (Tr2) Base (Tr2) SSMini5-F2 Package
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- Tr2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ■ Electrical Characteristics Ta = 25°C ± 3°C
- Tr1 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 0 160 40 120 80 150 100 125 Total power dissipation PT (mW) Ambient temperature Ta (°C) Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 05 0 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 05 0 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio h FE VCE = 10 V, IC = 5 mA 80 Collector-emitter saturation voltage V CE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V Output voltage high-level V OH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Output voltage low-level V OL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ 0.2 V Input resistance R 1 −30% 47 +30% k Ω Resistance ratio R 1 / R2 0.8 1.0 1.2 Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) V CEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −1.0 mA Forward current transfer ratio h FE VCE = −10 V, IC = −5 mA 30 Collector-emitter saturation voltage V CE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V Output voltage high-level V OH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ− 4.9 V Output voltage low-level V OL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2 V Input resistance R 1 −30% 4.7 +30% k Ω Resistance ratio R 1 / R2 0.47 Transition frequency f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Characteristics charts of Tr1 IC VCE VCE(sat) IC hFE IC Cob VCB IO VIN VIN IO 01 2 21 0 48 6 Ta = 25°C 120 IB = 1.0 mA 0.1 mA 0.2 mA 0.3 mA 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.9 mA 0.8 mA Collector-emitter voltage VCE (V) Collector current IC (mA) 0.01 0.1 1 10 100 IC / IB = 10 0.1 Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 0.1 1 10 100 160 240 320 1 000 VCE = 10 V Ta = 75°C −25°C 25°C Forward current transfer ratio hFE Collector current IC (mA) 0 1 02 03 0 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) 048 1 2 VO = 5 V Ta = 25°C 0.1 100 Output current IO (mA) Input voltage VIN (V) 0.1 0.1 100 1 10 100 VO = 0.2 V Ta = 25°C Input voltage VIN (V) Output current IO (mA)
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Characteristics charts of Tr2 Cob VCB IO VIN VIN IO IC VCE VCE(sat) IC hFE IC Ta = 25°C −120 −80 −40 IB = −1.0 mA − 0.2 mA − 0.3 mA − 0.4 mA − 0.5 mA − 0.6 mA − 0.7 mA − 0.8 mA − 0.9 mA − 0.1 mA Collector-emitter voltage VCE (V) Collector current IC (mA) − 0.01 −10 −100 −1 000 IC / IB = 10 − 0.1 Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −40 −80 −120 −160 −200 Ta = 75°C 25°C −25°C VCE = −10 V −1 −10 −100 −1 000 Forward current transfer ratio hFE Collector current IC (mA) 0 −10 −20 −30 −40 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) VO = −5 V Ta = 25°C − 0.1 −10 −100 Output current IO (mA) Input voltage VIN (V) − 0.1 −100 −10 −100 VO = − 0.2 V Ta = 25°C −10 Input voltage VIN (V) Output current IO (mA)
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