UMT2N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMT2N

FEATURES

Two 2SA1037AK chips in SOT-363 package MARKING: T2 Absolute maximum ratings (T a =25℃) Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -6 V I C Collector Current -150 mA P C Collector Power Dissipation 150 mW R θJA Thermal Resistance from Junction to Ambient 833 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ Electrical Characteristics (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-50μA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA, I C =0 -6 V Collector cut-off current I CBO V CB =-60V, I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-6V, I C =0 -0.1 μA DC current gain h FE V CE =-6V, I C =-1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.5 V Transition frequency f T V CE =-12V, I C =-2mA, f=100MHz 140 MHz Collector output capacitance C ob V CB =-12V, I E =0, f=1MHz 5 pF JC(T DUAL TRANSISTOR (PNP+PNP) www.cj-elec.com 1 E,Mar,2016www.cj-elec.com

-0.1 -1 -10 -1 -10 -100 100 150 200 250 -0.1 -1 -10 -100 100 200 300 400 500 600 0 25 50 75 100 125 150 100 150 200 -0.1 -1 -10 -100 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -100 -10 -100 -0 -2 -4 -6 -8 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 f=1MHz I E =0 / I C T a =25 REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib C ib C ob TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =-12V T a =25 I C f T -150 V CE = -6V T a =100 T a =25 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR POWER DISSIPATION P c (mW) AMBIENT TEMPERATURE T a ( ) P c —— T a -150 COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (V) T a =25 T a =100 β=10 I C V BEsat -300 -30 -20 -150 T a =25 T a =100 β=10 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 -8.0uA -7.2uA -6.4uA -5.6uA -4.8uA -4.0uA -3.2uA -2.4uA -1.6uA I B =-0.8uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic Typical Characteristics www.cj-elec.com 2www.cj-elec.com E,Mar,2016

SOT-363 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP E,Mar,2016

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