UGB8FT GE | Alldatasheet
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Technical content
ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Voltage -300 to 400 Volts Forward Current -8.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for freewheeling diode power factor correction applications ♦ Soft recovery characteristics ♦ Excellent high temperature switching ♦ Optimized to reduce switching losses ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed ♦ Glass passivated chip junction MECHANICAL DATA Case: JEDEC TO-263AB molded plastic body Terminals:Plated leads, solderable per MIL-STD-750, Method 2026 Polarity:As marked Mounting Position:A n y Weight:0.08 ounce, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS UGB8FT UGB8GT UNITS Maximum repetitive peak reverse voltage V RRM 300 400 Volts Working peak reverse voltage V RWM 225 300 Volts Maximum RMS voltage V RMS 210 280 Volts Maximum DC blocking voltage V DC 300 400 Volts Maximum average forward rectified current at TC =100°C I (AV) 8.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed I FSM 100.0 Amps on rated load (JEDEC Method) Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C 1.30 TJ=150°C VF 1.00 Volts Maximum reverse leakage current T C =25°C 10 at working peak reverse voltage T C =100°C IR 350 µA Reverse recovery time at Maximum IF=1.0A, di/dt=100A/µs, VR =30V, Irr=0.1 IRM trr 50 ns Maximum reverse recovery time at IF=0.5A, IR =1.0A, Irr=0.25A t rr 35 ns Maximum reverse recovery current at IF=10A, di/dt=50A/µs,VR =30V T C =100°C IRM 5.5 Amps Maximum stored charge IF=2A, di/dt=20A/µs, VR =30V, Irr=0.1 IRM Q rr 55 nC Typical thermal resistance from junction to case R Θ JC 2.2 °C/W Operating junction and storage temperature range T J, TSTG -40 to+150 °C NOTE: (1) Pulse test: 300µs pulse width, 1% duty cycle NOTICE: Advanced product information is subject to change without notice ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION Dimensions are in inches and (millimeters) -T-SEATING PLATE 0.380 (9.65) 0.420 (10.67) 0.320 (8.13) 0.625 (15.88) 0.027 (0.686) 0.037 (0.940) 1 2 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.018 (0.46) 0.025 (0.64) 0.080 (2.03) 0.110 (2.79) 0.090 (2.29) 0.110 (2.79) 0.245 (6.22) MIN - HEATSINK PIN 1 K K 0.095 (2.41) 0.100 (2.54) K PIN 2 0.047 (1.19) 0.055 (1.40) TO-263AB
0 25 50 75 100 125 150 175 2.0 4.0 6.0 8.0 0.01 0.1 100 0.1 1 10 100 100 0 25 50 75 100 125 150 1750 0 20 40 60 80 100 0.01 0.1 100 1,000 1 10 100 100 125 150 FIG. 1 - FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, °C AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT, AMPERES FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG. 5 - REVERSE SWITCHING CHARACTERISTICS RECOVERED STORED CHARGE/REVERSE RECOVERY TIME nC/ns JUNCTION TEMPERATURE, °C FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF REVERSE VOLTAGE, VOLTS TC =100°C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=100°C TJ=25°C TJ=25°C PULSE WIDTH=300 µs 1% DUTY CYCLE TJ=25°C f=1.0 MHZ Vsig=50mVp-p di/dt=20A/µs di/dt=150A/µs di/dt=100A/µs di/dt=50A/µs di/dt= 150A/µs di/dt=20A/µs di/dt=50A/µs di/dt=100A/µs TJ=125°C IF=4.0A VR =30V trr Q rr RESISTIVE OR INDUCTIVE LOAD RATINGS AND CHARACTERISTIC CURVES UGB8FT AND UGB8GT