MMBD7000 GE | Alldatasheet

Document overview

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Technical content

Reverse Voltage V R 100 Volts Forward Current (continuous) I F 200 mA Non-Repetitive Peak Forward Current at t = 1s IFSM 500 mA Power Dissipation on FR-5 Board TA = 25¡C P tot 225 mW Derate above 25¡C 1.8 mW/¡C Total Device Dissipation on Alumina Substrate, TA = 25¡C P tot 300 mW Derate above 25¡C 2.4 mW/¡C Thermal Resistance RQJA 417(1) ¡C/WJunction to Ambient Air 556(2) Maximum Junction Temperature T j 150 ¡C Storage Temperature Range T S Ð55 to +150 ¡C NOTES (1) On Alumina Substrate (2) On FR-5 Board MMBD7000 DUAL SMALL SIGNAL SWITCHING DIODE

FEATURES

¨ Silicon Epitaxial Planar Diode ¨ Fast switching dual diode, especially suited for automatic insertion. MECHANICAL DATA Case: SOT-23 (TO-236AB) Plastic Package Weight: approx. 0.008 g Marking Code: M5C MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified (per diode) 2/11/99 Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) 1 2 T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) SOT-23 NEW PRODUCT NEW PRODUCT NEW PRODUCT

ELECTRICAL CHARACTERISTICS

SYMBOL MIN. MAX. UNIT Reverse Breakdown Voltage at IR=100mAV BR 100 - Volts Leakage Current at VR = 50 V I R - 1.0 mA at VR = 100 V I R - 3.0 mA at VR = 50 V, Tj = 125¡C I R - 100 mA Forward Voltage at IF = 1mA V F 0.55 0.70 Volts at IF = 10mA V F 0.67 0.82 Volts at IF = 100mA V F 0.75 1.10 Volts Capacitance Ctot - 1.5 pFat VR = 0; f = 1MHZ Reverse Recovery Time from IF = 10mA to IR = 10 mA t rr - 4.0 ns measured at Irr = 1mA, RL = 100 W Ratings at 25¡C ambient temperature unless otherwise specified (per diode).