UGB8AT GE | Alldatasheet
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Technical content
ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage -50 to 200 Volts Forward Current - 8.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode ♦ Ultrafast reverse recovery time for high efficiency ♦ Soft recovery characteristics ♦ Excellent high temperature switching ♦ Glass passivated chip junction ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed MECHANICAL DATA Case: JEDEC TO-263AB molded plastic body Terminals:Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity:As marked Mounting Position:Any Weight:0.08 ounce, 2.24 grams MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS UGB8AT UGB8BT UGB8CT UGB8DT UNITS Maximum repetitive peak reverse voltage V RRM 50 100 150 200 Volts Maximum RMS voltage V RMS 35 70 105 140 Volts Maximum DC blocking voltage V DC 50 100 150 200 Volts Maximum average forward rectified current at TC =100°C I(AV) 8.0 Amps Peak forward surge current 8.3 ms single half sine-wave superimposed I FSM 150.0 Amps on rated load (JEDEC Method) at TC =100°C Maximum instantaneous forward voltage at: 8.0 1.00 20A VF 1.20 Volts5.0A, TJ=150°C 0.95 Maximum DC reverse current T C =25°C 10.0 at rated DC blocking voltage T C =100°C IR 300.0 µA Maximum reverse recovery time(NOTE 1) trr 20.0 ns Maximum reverse recovery time T J=25°C 30.0 (NOTE 2) TJ=100°C trr 50.0 ns Maximum recovered stored charge T J=25°C 20.0 (NOTE 2) TJ=100°C Q rr 45.0 nC Typical junction capacitance (NOTE 3) C J 45.0 pF Typical thermal resistance (NOTE 4) R Θ JC 4.0 °C/W Operating junction and storage temperature range T J, TSTG -55 to+150 °C NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR =1.0A, Irr=0.25A (2) Trr and Qrrmeasured at IF=8.0A, VR =30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr (3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts (4) Thermal resistance from junction to case Dimensions in inches and (millimeters) -T-SEATING PLATE 0.380 (9.65) 0.420 (10.67) 0.320 (8.13) 0.625 (15.88) 0.027 (0.686) 0.037 (0.940) 1 2 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.018 (0.46) 0.025 (0.64) 0.080 (2.03) 0.110 (2.79) 0.090 (2.29) 0.110 (2.79) 0.245 (6.22) MIN - HEATSINK PIN 1 K K 0.095 (2.41) 0.100 (2.54) K PIN 2 0.047 (1.19) 0.055 (1.40) TO-263AB NEW PRODUCT NEW PRODUCT NEW PRODUCT 10/27/98
0 25 50 75 100 125 150 175 2.0 4.0 6.0 8.0 0.01 0.1 100 0 25 50 75 100 125 150 1750 1 10 100 100 1,000 0 20 40 60 80 100 0.01 0.1 100 1,000 0.01 0.1 1 10 100 0.1 100 FIG. 1 - FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, °C AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT, AMPERES FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG. 5 - REVERSE SWITCHING CHARACTERISTICS RECOVERED STORED CHARGE/REVERSE RECOVERY TIME nC/ns JUNCTION TEMPERATURE, °C FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF REVERSE VOLTAGE, VOLTS TC =100°C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=100°C TJ=25°C TJ=25°C PULSE WIDTH=300 µs 1% DUTY CYCLE TJ=25°C f=1.0 MHZ Vsig=50mVp-p di/dt=20A/µs di/dt=150A/µs di/dt=100A/µs di/dt=50A/µs di/dt= 150A/µs di/dt=20A/µs di/dt=50A/µs di/dt=100A/µs TJ=125°C IF=4.0A VR =30V trr Q rr RESISTIVE OR INDUCTIVE LOAD RATINGS AND CHARACTERISTIC CURVES UGB8AT THRU UGB8DT