UF3AB DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
Case:JEDEC DO-214AA,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.003 ounces,0.093 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UF3DB UF3GB UF3JB UF3KB UF3MB Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forw ard rectified current L =90 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage at3.0 A V F 1.4 V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical reverse recovery tim e (N ote1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG 15 12 I R 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 1.0 500 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A - 55 ---- + 150 DO-214AA(SMB) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS The plastic material carries U/L recognition 94V-0 10050 NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. A UF3AB--- UF3MB A Easily cleaned with Alcohol,Isopropanol and similar solv ents I F(AV) 3 SURFACE MOUNT RECTIFIERS UNITS - 55 ---- + 150 UF3AB UF3BB 50 100 A 100I FSM 1.7 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.1 0.2 0.4 1 2 4 10 40 100 20 T J =25 UF3AB-UF3GB UF3JB-UF3MB AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT UF3AB --- UF3MB FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURRENT SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT LEAD TEMPERATURE, PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) -1.0A -0.25A +0.5A t rr 1cm 0.01 0.1 1.0 100 50\\100\\200V 600\\800\\1000V T J =25 Pulse Width=300 µ S 400V 1 10 100 8.3ms Single Half Sine-Wave 100 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 175 Diode Semiconductor Korea www.diode.kr