RS1AB DSK | Alldatasheet
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified RS1DB RS1GB RS1JB RS1KB Maximum recurrent peak reverse voltage V RRM 200 400 600 800 V Max imu m RMS v olt age V RWS 140 280 420 560 V Maximum DC blocking voltage V DC 200 400 600 800 V Maximum average forw ord rectified current c @ T L =90 O C I F(AV) Peak forward surge current 8.3ms single c half-sine-wave superimposed on rated c load I FSM A Maximum instantaneous forw ard voltage at 1.0A V F V M axim um DC reverse current @T A =25 o C at rated DC blocking voltage @T A =125 o C M axim um reverse recovery tim e (NOTE 1) t rr 250 ns Typical junction capacitance (NOTE 2) C J pF R JA R JL Operating junction and storage temperature range T J T STG o C 700 1000 50 100 RS1MB 1000 50.0 1.30 5.0 105 I R NOTE: 1.Reverse recovery time test conditions:I F =0.5A,I R =1.0A,I rr =0.25A RS1AB - - - RS1MB 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 1.0A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AA,molded plastic over 1111passivated chip SURFACE MOUNT RECTIFIERS Terminals:Solder plated, solderable per M IL-STD- 1111750, Method 2026 Plastic package has underwriters laborator 111 flammability classification 94V-0 DO - 214AA(SMB) Typical thermal resitance (NOTE 3) copper pad areas For surface mounted applications UNITS 50 100 o C/W RS1BB High temperature soldering: 111 250 o C/10 seconds at terminals Low profile package RS1AB Polarity: color band denotes cathode end Weight: 0.003 ounces, 0.093 gram Glass passivated chip junction 1.0 500150 30.0 Dimensions in millimeters 7.0 A A www.diode.kr Diode Semiconductor Korea
Lead Temperature (°C) Fig. 1 — Forward Current Derating Curve Average Forward Rectified Current (A) Fig. 3 — Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (µA) Fig. 4 — Typical Reverse Characteristics Fig. 6 — Typical Transient Thermal Impedance Number of Cycles at 60 H Z t, Pulse Duration (sec.) Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Reverse Voltage (V) Junction Capacitance (pF) Transient Thermal Impedance (°CW) Fig. 5 — Typical Junction Capacitance 0 20 40 60 80 100 120 140 160 180 0.5 1.0 1.2 Resistive or Inductive Load 1 10 100 T L = 90°C 8.3ms Single Half Sine-Wave (JEDEC Method) 0.01 0.1 Pulse Width = 300µs 1% Duty Cycle 0 20 40 60 80 100 0.01 0.1 1 10 100 T J = 25°C f = 1.0MH Z Vsig = 50mVp-p 0.01 0.1 1 10 100 Mounted on 0.2 x 0.2" (5 x 5mm) Copper Pad Area Copper Pad Areas T J = 25°C T J = 100°C T J = 125°C T J = 125°C T J = 25°C RS1AB- - -RS1MB www.diode.kr Diode Semiconductor Korea