UD1413

TC1413 TELCOM | Alldatasheet

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Technical content

4-201TELCOM SEMICONDUCTOR, INC. 3A HIGH-SPEED MOSFET DRIVERS TC1413 TC1413N FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS TC1413 VDD OUT GND VDD IN NC GND NC = NO INTERNAL CONNECTION 2 6, 7 INVERTING NOTE: SOIC pinout is identical to DIP. OUT TC1413N VDD OUT GND VDD IN NC GND 2 6, 7 NONINVERTING OUT OUTPUT INPUT GND EFFECTIVE INPUT C = 10pF 300mV INVERTING OUTPUTS NONINVERTING OUTPUTS VDD TC1413N 4.7V TC1413

ORDERING INFORMATION

Part No. Package Temp.Range TC1413COA 8-Pin SOIC 0 °C to +70°C TC1413CPA 8-Pin Plastic DIP 0 °C to +70°C TC1413EOA 8-Pin SOIC – 40 °C to +85°C TC1413EPA 8-Pin Plastic DIP – 40 °C to +85°C TC1413NCOA 8-Pin SOIC 0 °C to +70°C TC1413NCPA 8-Pin Plastic DIP 0 °C to +70°C TC1413NEOA 8-Pin SOIC – 40 °C to +85°C TC1413NEPA 8-Pin Plastic DIP – 40 °C to +85°C

FEATURES

n Latch-Up Protected: Will Withstand 500mA Reverse Current n Input Will Withstand Negative Inputs Up to 5V n High Capacitive Load n Consistent Delay Times With Changes in Supply Voltage n Matched Delay Times n Low Supply Current n Pinout Same as TC1410/11/12 GENERAL DESCRIPTION The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1413/1413N can easily switch 1800pF gate capacitance in 20 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater output accuracy. TC1413/N-8 10/14/96

4-202 TELCOM SEMICONDUCTOR, INC. ABSOLUTE MAXIMUM RATINGS* Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V) Package Thermal Resistance Operating Temperature Range Power Dissipation (TA ≤ 70°C) *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless other- wise specified. Typical values are measured at TA = 25°C; VDD =16V. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.0 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current – 5V ≤ VIN ≤ VDD TA = 25°C– 1 — 1 µA – 40°C ≤ TA ≤ 85°C – 10 — 10 Output VOH High Output Voltage DC Test V DD – 0.025 — — V VOL Low Output Voltage DC Test — — 0.025 V R O Output Resistance V DD = 16V, IO = 10 mA TA = 25°C — 2.7 4 Ω IPK Peak Output Current V DD = 16V — 3.0 — A IREV Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A Withstand Reverse Current t ≤ 300 µsec Switching Time (Note 1) tR Rise Time Figure 1 T A = 25°C — 20 28 nsec 0°C ≤ TA ≤ 70°C — 22 33 – 40°C ≤ TA ≤ 85°C —2 4 3 3 tF Fall Time Figure 1 T A = 25°C — 20 28 nsec 0°C ≤ TA ≤ 70°C — 22 33 – 40°C ≤ TA ≤ 85°C —2 4 3 3 tD1 Delay Time Figure 1 T A = 25°C — 35 45 nsec 0°C ≤ TA ≤ 70°C — 40 50 – 40°C ≤ TA ≤ 85°C —4 0 5 0 tD2 Delay Time Figure 1 T A = 25°C — 35 45 nsec 0°C ≤ TA ≤ 70°C — 40 50 – 40°C ≤ TA ≤ 85°C —4 0 5 0 Power Supply IS Power Supply Current V IN = 3V — 0.5 1.0 mA VIN = 0V — 0.1 0.15 NOTE: 1. Switching times are guaranteed by design. VDD = 16V VDD = 16V 3A HIGH-SPEED MOSFET DRIVERS TC1413 TC1413N

4-203TELCOM SEMICONDUCTOR, INC. Figure 1. Switching Time Test Circuit

8 Pin DIP

8 Pin CerDIP

8 Pin SOIC

4-204 TELCOM SEMICONDUCTOR, INC. 3A HIGH-SPEED MOSFET DRIVERS TC1413 TC1413N 100 200 300 400 500 16141210864 VDD (VOLTS) Quiescent Supply Current vs. Supply Voltage TA = 25°C ISUPPLY (µA) -40 -20 0 20 40 60 80 100 200 300 400 500 TEMPERATURE ( °C) Quiescent Supply Current vs. Temperature VSUPPLY = 16V ISUPPLY (µA) VIN = 3V VIN = 0V VIN = 0V VIN = 3V 1.1 1.2 1.3 1.4 1.5 1.6 16141210864 VDD (VOLTS) Input Threshold vs. Supply Voltage TA = 25°C VTHRESHOLD (VOLTS) -40 -20 0 20 40 60 80 1.1 1.2 1.3 1.4 1.5 1.6 TEMPERATURE ( °C) Input Threshold vs. Temperature VSUPPLY = 16V VTHRESHOLD (VOLTS) VIH VIL VIL VIH 16141210864 VDD (VOLTS) High-State Output Resistance R ds (ON) W Low-State Output Resistance R ds (ON) W TA = –40°C TA = 85 TA = 25°C 16141210864 VDD (VOLTS) TA = –40°C TA = 85 TA = 25°C TYPICAL CHARACTERISTICS

4-205TELCOM SEMICONDUCTOR, INC. 3A HIGH SPEED MOSFET DRIVERS TC1413 TC1413N 16141210864 VDD (VOLTS) Rise Time vs. Supply Voltage C LOAD = 1800pF TRISE (nsec) TA = –40°C TA = 25°C TA = 85°C 16141210864 VDD (VOLTS) Fall Time vs. Supply Voltage C LOAD = 1800pF TFALL (nsec) TA = –40°C TA = 25°C TA = 85°C 100 110 16141210864 VDD (VOLTS) TD1 Propagation Delay vs. Supply Voltage C LOAD = 1800pF TD1 (nsec) TA = –40°C TA = 25°C TA = 85°C 100 16141210864 VDD (VOLTS) TD2 Propagation Delay vs. Supply Voltage C LOAD = 1800pF TD2 (nsec) TA = –40°C TA = 25°C TA = 85°C 0 1000 2000 3000 4000 50000 C LOAD (pF) Rise and Fall Times vs. Capacitive Load TA = 25°C, VDD = 16V TRISE, TFALL (nsec) TFALL TRISE 0 1000 2000 3000 4000 500028 C LOAD (pF) Propagation Delays vs. Capacitive Load TA = 25°C, VDD = 16V PROPAGATION DELAYS (nsec) TD2 TD1 TYPICAL CHARACTERISTICS (Cont.)