TC429 TELCOM | Alldatasheet

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Technical content

4-175TELCOM SEMICONDUCTOR, INC. TC429

FEATURES

n High-Impedance CMOS Logic Input n Logic Input Threshold Independent of Supply Voltage n Low Supply Current n Output Voltage Swing Within 25 mV of Ground or V DD n High Capacitive Load Drive Capability — tRISE, tFALL = 35nsec Max With CLOAD = 2500pF

APPLICATIONS

n Switch-Mode Power Supplies n CCD Drivers n Pulse Transformer Drive n Class D Switching Amplifiers GENERAL DESCRIPTION The TC429 is a high-speed, single CMOS-level transla- tor and driver. Designed specifically to drive highly capaci- tive power MOSFET gates, the TC429 features 2.5Ω output impedance and 6A peak output current drive. A 2500pF capacitive load will be driven 18V in 25nsec. Delay time through the device is 60nsec. The rapid switching times with large capacitive loads minimize MOSFET transi- tion power loss. A TTL/CMOS input logic level is translated into an output voltage swing that equals the supply and will swing to within 25mV of ground or V DD . Input voltage swing may equal the supply. Logic input current is under 10µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy. Input "speed-up" capacitors are not required. The CMOS design minimizes quiescent power supply current. With a logic 1 input, power supply current is 5mA maximum and decreases to 0.5mA for logic 0 inputs. For dual devices, see the TC426/TC427/TC428 data sheet. For noninverting applications, or applications requiring latch-up protection, see the TC4420/TC4429 data sheet. TYPICAL APPLICATION NC = NO INTERNAL CONNECTION TC429 GNDGND NC INPUT VDD OUTPUT OUTPUT VDD NOTE: Duplicate pins must both be connected for proper operation. PIN CONFIGURATION

ORDERING INFORMATION

Part No. Package Range TC429CPA 8-Pin Plastic DIP 0 °C to +70°C TC429EPA 8-Pin Plastic DIP – 40 °C to +85°C TC429MJA 8-Pin CerDIP – 55 °C to +125°C OUTPUT INPUT GND EFFECTIVE INPUT C = 38pF VDD 300mV 4,5 1,8 6,7 TC429 TC429-4 10/11/96 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

4-176 TELCOM SEMICONDUCTOR, INC. ABSOLUTE MAXIMUM RATINGS* Power Dissipation (TA ≤ 70°C) Derating Factors Operating Temperature Range ELECTRICAL CHARACTERISTICS: TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1, High Input Voltage 2.4 1.8 — V VIL Logic 0, Low Input Voltage — 1.3 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage V DD – 0.025 — — V VOL Low Output Voltage — — 0.025 V R O Output Resistance V IN = 0.8V, — 1.8 2.5 Ω IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V IPK Peak Output Current V DD = 18V (See Figure 3) — 6 — A Switching Time (Note 1) tR Rise Time Figure 1, C L = 2500pF — 23 35 nsec tF Fall Time Figure 1, C L = 2500pF — 25 35 nsec tD1 Delay Time Figure 1 — 53 75 nsec tD2 Delay Time Figure 1 — 60 75 nsec Power Supply IS Power Supply Current V IN = 3V — 3.5 5 mA VIN = 0V — 0.3 0.5 NOTES: 1. Switching times guaranteed by design. *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

4-177TELCOM SEMICONDUCTOR, INC. ELECTRICAL CHARACTERISTICS: Over operating temperature with 7V ≤ VDD ≤ 18V, unless otherwise specified. NOTE: 1. Switching times guaranteed by design. Figure 1. Inverting Driver Switching Time Test Circuit

4-179TELCOM SEMICONDUCTOR, INC. Table 1. Maximum Operating Frequencies neously for a very short period when the output changes. An example shows the relative magnitude for each item. IJA devices or +125°C for MJA devices.

8 Pin DIP

8 Pin CerDIP

8 Pin SOIC

4-180 TELCOM SEMICONDUCTOR, INC. TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TYPICAL CHARACTERISTICS 1051 0 1 5 2 0 SUPPLY VOLTAGE (V) TIME (nsec) Rise/Fall Times vs. Supply Voltage TA = +25°C C L = 2500pF 10 07 5 TEMPERATURE ( °C) TIME (nsec) Rise/Fall Times vs. Temperature C L = 2500pF VDD = +15V –50 –25 25 50 100 125 150 tR tRtF tF 100 100 1K 10K CAPACITIVE LOAD (pF) TIME (nsec) Rise/Fall Times vs. Capacitive Load 40 07 5 TEMPERATURE ( °C) DELAY TIME (nsec) Delay Times vs. Temperature –50 –25 25 50 100 125 tD2 tD1 SUPPLY CURRENT (mA) 10 100 1K 10K CAPACITIVE LOAD (pF) 200kHz 20kHz Supply Current vs. Capacitive Load tR tF TA = +25°C VDD = +15V 400kHz 140 120 100 405 DELAY TIME (nsec) Delay Times vs. Supply Voltage 10 15 20 SUPPLY VOLTAGE (V) tD1 tD2 TA = +25°C C L = 2500pF TA = +25°C VDD = +15V C L = 2500pF VDD = +15V 1 10 100 1K 15V 10V VDD = 18V TA = +25°C C L = 2500 pF SUPPLY CURRENT (mA) FREQUENCY (kHz) Supply Current vs. Frequency 04 8 1 2 1 6 2 0 Supply Current vs. Supply VoltageSUPPLY CURRENT (mA) SUPPLY VOLTAGE (V) –75 –25 50 100 150 Supply Current vs. TemperatureSUPPLY CURRENT (mA) TEMPERATURE ( °C) –50 0 25 75 125 TA = +25°C R L = ∞ INPUT LOGIC "1" VDD = +18°C R L = ∞ INPUT LOGIC "1" 150 HYSTERESIS '310mV 200mV 300mV TA = +25°C OUTPUT VOLTAGE (V) INPUT VOLTAGE (V) Voltage Transfer Characteristics OUTPUT VOLTAGE (mV) 400 300 200 100 CURRENT SOURCED (mA) 0 20 40 60 80 100 VDD = 5V 10V 15V 18V TA = +25°C High Output Voltage vs. Current OUTPUT VOLTAGE (mV) 400 300 200 100 CURRENT SUNK (mA) 0 20 40 60 80 100 VDD = 5V 10V 15V 18V TA = +25°C Low Output Voltage vs. Current

4-181TELCOM SEMICONDUCTOR, INC. Figure 3. Peak Output Current Test Circuit