U6268B

U6268B TEMIC | Alldatasheet

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Technical content

Features

/C0068Two identical interface channels /C0068Provides a pre-regulated smoothed voltage and a supply current up to 50 mA for the sensors /C0068Receives data from the sensors by current modulation with a transmission rate of 60 kBaud (transmission bandwidth 500 kHz) /C0068Current modulation provides high noise immunity for data transfer /C0068TTL-compatible input activate the sensor /C0068Data output can be directly connected to a micro- controller input /C0068Operation supply voltage range 5.7 V /C0118 V S /C0118 40 V /C0068ESD protection according to MIL-STD-883C test method 3015.7 /C0068High-level EMI protection Benefits /C0068V oltage supply and data transmission with one active wire over long distances

Ordering Information

Extended Type Number Package Remarks U6268B SO16 Block Diagram Short circuit detection Temperature monitor Smoothed voltage regulator I/U converter Smoothed voltage regulator I/U converterV oltage comparatorChannel 1 Data Enable Enable V oltage comparator Channel 2 Data Crash sensor Channel 1 Channel 2 Channel 1 power supply Data trans– mission Crash sensor Channel 2 power supply Data trans– mission 13839 µC Figure 1. Block diagram

Figure 2. Pinning

1 GND Ground and reference pin

2 RETURN1 Return line of the external unit,

3 OUT1 V oltage-stabilized supply output

4 V S Supply voltage of the IC

5 OUT2 V oltage stabilized supply output

6 SC Smooth time constant for slow

7 RETURN2 Return line of the external unit,

10 ENABLE1 Controls OUT1 voltage,

11 CLL2 Current logic level output, low

12 OCM2 Analog current output, repre-

13 OCM1 Analog current output, repre-

14 CLL1 Current logic level output, low

15 ENABLE2 Controls OUT2 voltage,

16 GND Ground and reference pin

Figure 3. Application circuit internal pull-down current at OUTx is typically 3 mA.

Figure 4. Output voltage with tolerances vs. supply voltage (total of 15 /C0087 for OUTx and RETURN). reduce power dissipation during fault conditions. pacity of 33 nF is required at the pins OUTx . switches the related output on or off. OUTx and RETURNx on to supply the external unit. OCM in a range from 500 /C0087 to 1 k/C0087. OCM is limited by an internal clamping diode to 5.3 V .

Rev. A1, 21-May-97 Preliminary Information 4 (12) logic data transmission from the external unit to the inter- face is completed. CLLx is the output stage of a comparator with an internal threshold and with the OCMx input. A OCMx-voltage higher than 2.4 V creates a logic low at CLLx, and a OCMx-voltage lower than 1.43 V creates a logic high at CLLx. The comparator has an internal hysteresis with typically 0.4 V . With the pull-down resistor R OCMx = 750 /C0087 at OCMx, the correct OUTx-current threshold related to the logical out- put CLLx is ensured. The CLLx is ’low’ if the OUTx-current is higher than 27.3 mA, and the CLLx is ’high’, if the OUTx-current is lower than 19.1 mA. The comparator has an internal hysteresis of typically 5 mA. The tolerance of the R OCM resistor is assumed to be 0%. The CLL-pin is an open-collector output and needs a pull-up resistor of typically 2 k/C0087 to the 5-V supply. For ESD protection, a 7-V Zener diode is implemented. RETURN 1, RETURN 2 The RETURNx pin provides a low-ohmic connection to GND via a switched open-collector NPN-transistor. If ENABLEx is high, RETURNx is switched on with a satu- ration voltage less than 0.5 V at I RETURNx /C0118 50 mA. If ENABLEx is low or open, RETURNx is a current sink with /C0118 2 mA. RETURNx is current-limited at typically 150 mA. SC The smooth capacitor is designed to realize the long-time constant for the slow voltage change at OUTx for both in- terface channels. The capacity is typ. 22 nF. At the rising edge of V Batt, the maximum slew rate is VOUTx = 5 V/ms, and at the falling edge of VBatt, the maximum slew rate is VOUTx = 10 V/ms. GND-Pins By means of a GND bond from the chip to Pin 1 and Pin 8, high ground breakage security is achieved and lowest voltage drop and ground shift between IC- and circuit ground is provided. The four GND pins and the die pad are directly connected to the copper leadframe, resulting in a very low thermal resistance, R thJC. In order to achieve a good thermal resistance, RthJA, a good copper connec- tion from the four GND pins to the metal parts of the modul housing is also recommended. Power Dissipation Worst case calculation of the supply current IS: IS = 1,278 /C0032 ( IOUT1 + IOUT2 ) + 18 mA Worst case calculation of the IC’s power dissipation PV : PV = (VS/C0032IS) – [(VS – Vdiff – Vret-sat)/C0032(IOUT1 + IOUT2 ) +R OCM /C0032((IOUT1 2 + IOUT2 2) / 81)] V S = supply voltage 5.7 to 25 V voltage difference VS to VOUTx V diff = 3.6 at 12 V /C0118V S /C0118 25 V V diff = 0.8 at 5.7 V /C0118V S /C0118 8.5 V V ret-sat= 0.5 V saturation voltage return IOUTx = output current at Pin OUTx = 0 to 60 mA R OCM = resistor at Pin OCMx Selective Overtemperature Protection An overtemperature protection is integrated which gene- rates a switch-off signal at a chip temperature of typically T j = 160°C and a switch-on signal at typically Tj = 150°C. In case of a detected overtemperature, only the corre- sponding channel is disabled. The other channel stays enabled. The RETURNx is switched off if the voltage at RE- TURNx is higher than 2 V (short-circuit comparator threshold) and overtemperature is detected. The OUTx is switched off if the voltage at OCMx is higher than 4.6 V (overcurrent detection level) and over- temperature is detected. The OCM voltage monitors the output current at OUTx via the current ratio of 0.1. The overcurrent-detection level of OUTx can be varied by changing the OCMx resistor. If OUTx is switched off by overtemperature and overcurrent detection, the CLLx output remains logic low (overcurrent). As the IC is only overtemperature-protected for short-cir- cuit conditions at RETURNx or OUTx, it has to be checked in each application that the chip temperature does not exceed T jmax = 150°C in normal operation. Test Hint The overtemperature signal can be activated by con-nect- ing ENABLE1 or ENABLE2 to 9 V/ 10 mA.

Rev. A1, 21-May-97 5 (12) Absolute Maximum Ratings Parameters Symbol Min. Typ. Max. Unit Supply voltage V S –0.6 40 V V oltage at pins CLL1, CLL2, ENABLE1, ENABLE2 –0.3 6 V V oltage at SC V SC –0.3 30 V V oltage at OCM1, OCM2 V OCMx –0.3 6.8 V V oltage at RETURN1, RETURN2 V RETURNx –1 27 V V oltage at OUT1, OUT2 V OUTx –1 40 V Current at supply (both channels OUTx and RETURNx shorted) IS 240 mA Current at logical pins: CLL1, CLL2 ENABLE1, ENABLE2 ICCLx IENABLEx 0.1 mA mA Current at SC (SC related to GND or VBatt) ISC –110 220 /C0109A Current at pins to external unit OUT1, OUT2, RETURN1, RETURN2 internal limited ESD classification Human body model (100 pF, 1.5 k/C0087) Machine model (200 pF, 0.0 /C0087) All pins /C00342000 /C0034200 V V Ambient temperature range Tamb –40 95 °C Junction temperature range Tj –40 150 °C Storage temperature range Tstg –55 125 °C Thermal Resistance Parameters Symbol Value Unit Junction to pin R thJC 36 k/W Junction ambient is reachable with a big pad size for GND near a screw or the metal housing R thJA 65 k/W

Electrical Characteristics

Tamb = –40 to 95°C and Tj = –40 to 150°C, operation supply voltage range 5.7 to 18 V continuously, /C011825 V for max. 25 min, /C011840 V for up to 500 ms. The current values are based on the 750 /C0087 0% resistor at OCM1/OCM2 Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Supply current T 125 °C Outputs disabled, VS /C0118 18 V IS 8 mApp y Tj /C0119 125°C Outputs disabled, VS /C0118 40 V IS 14 mA One output enabled, VS /C0118 18 V IS 13 mA Both outputs enabled, VS /C0118 18 V IS 18 mA Output load 2/C003215 mA, VS /C011818 V IS 56 mA Output load 2/C003228 mA, VS /C011818 V IS 90 mA Output load 2/C003250 mA, VS /C011818 V IS 146 mA Output load 2/C003260 mA, V S /C0118 18 V (Tj > 125°C) IS 171 mA Both channels OUTx and RETURNx shorted, VS /C0118 18 V IS 200 mA Function SC

Rev. A1, 21-May-97 Preliminary Information 6 (12) UnitMax.Typ.Min.SymbolTest Conditions / PinsParameters V oltage at SC V S = 5.7 V V SC 5.1 5.3 V V oltage at SC V S = 12.5 V V SC 9 9.4 V Maximal voltage at SC V S = 40 V V SCmax 30 V SC-discharge current V oltage SC = VSC – 3 V

5.7 V /C0118 VS /C0118 40 V ISC_dis 33 82 /C0109A

SC-charge current V oltage SC = VSC – 3 V

5.7 V /C0118 VS /C0118 40 V ISC_ch –58 –20 /C0109A

Function OUT1 and OUT2 (see figure 4) V oltage difference, V S to VOUTx IOUTx = 5 to 50 mA 5.7 V /C0118 VS /C0118 8.5 V

12 V /C0118 VS /C0118 25 V

V diff_low V diff_high 0.3 2.6 0.8 3.6 V V Output voltage OUTx 8.5 V /C0118 VS /C0118 11.3 V V OUT_med 7.7 V Maximal voltage at OUTx V S = 40 V V OUT_max 25 30 V Current mirror ratio, IOCMx /IOUTx V S /C0118 40 V , IOUTx = 5 to 15 mA V S /C0118 25 V , IOUTx =15 to 50mA V S /C0118 40 V , IOUTx =15 to 50mA IOUT_ratio 0.09 0.10 0.097 0.12 0.11 0.11 Linearity of mirror ratio I OCMx /IOUTx Ratio_lin –5 5 % Dynamic resistance OUTx V S /C0118 40 V IOUT = 15 to 50 mA R OUT 2 12 /C0087 Dynamic resistance OUTx + RETURNx V S /C0118 40 V IOUT = 15 to 50 mA R Dyn 4 15 /C0087 OUTx current limitation (OUTx short to GND) V S /C0118 18 V V S /C0118 40 V IOUT_lim –80 –105 –60 –60 mA mA Overcurrent detection level general Tj < 125°C IOUT_det –70 –51 mA Overcurrent detection level Tj /C0119 125°C Always valid: current limitation is higher than overcurrent detection IOUT_det –60 –51 mA Maximum OUTx current (OUTx short to GND) V S = 14 V , OCMx shorted to GND IOUT_max –140 –85 mA Leakage current at disabled OUTx OUT short to GND VS /C0118 25 V OUT short to GND VS /C0118 38.5 V IOUT_leak –0.02 –12 mA mA Leakage voltage at disabled OUTx OUT open V S /C0118 38.5 V V OUT_leak 4.3 V Internal pull-down current V S /C0118 18 V V S /C0118 40 V IOUT_sink 1.8 2.5 4.5 mA mA Supply rejection-ratio V SC = 7.6 V V rej_mV 80 mV Supply rejection-ratio Variation of VS 8.4 to 40 V in 10 /C0109s V rej_dB 51.9 dB Minimum capacity at OUTx for phase margin C OUT_min 33 nF Delay time with C out = 47 nF Switching on ENABLE = 1 to 90% V OUT reached Switching off ENABLE = 0 to 10% V OUT reached Enable_on Enable_off 100 /C0109s /C0109s Function OCM1, OCM2

Rev. A1, 21-May-97 7 (12) UnitMax.Typ.Min.SymbolTest Conditions / PinsParameters V oltage threshold CLL- comparator CLLx low-level voltage threshold CLLx high-level voltage threshold V oltage hysteresis V CLL_L V CLL_H V CLL_hys 1.75 1.43 0.26 2.4 1.9 0.6 V V V Minimal voltage at OCMx IOUT = 0 to 5 mA V OCM_min 0.5 V Current-limitation levelV S /C0118 40 V OUTx short to GND V OCM_lim 4.3 5.3 V Overcurrent-detection level V S /C0118 40 V V OCM_det 4.2 4.9 V Current limitation minus overcurrent detection V OCM_lim – VOCM_over /C0068_lim_OCM 0.15 0.5 V Intern. pull-down current IOCM_sink 0.1 0.45 mA Function RETURN1, RETURN2 Enable high saturation voltage IRETURN = 50 mA V ret_sat 0.5 V Dynamic resistance dI /C0119 10 mA R ret 2 8 /C0087 Current limitation Enable high, VRETURNx = 2 V Iret_lim 60 150 mA RETURNx is always higher than current Enable high, VRETURNx /C0118 18 V Iret_lim 70 200 mA higher than current limitation OUTx Enable low VRETURNx /C0118 18 V Iret_lim 0.8 2 mA Overcurrent-detection level Threshold comparator, switch-off return Threshold comparator, switch-on return Hysteresis Iret_low Iret_high Iret_hys 1.4 1.1 0.2 1.5 0.7 V V V Delay time C RETURN = 47 nF Switching on IRETURN at 50 mA Switching off IRETURN at 1 mA tdRet_on tdRet_off /C0109s /C0109s Function CLL1, CLL2 (CLLx with 2 k/C0087 to 5 V) IOUT threshold CLL comparator R OCM = 750 /C0087 CLL low-level threshold CLL high-level threshold Hysteresis ICLL_L ICLL_H ICLL_hys 23.3 19.1 3.5 27.3 22.3 8.2 mA mA mA CLL saturation voltage ICLL /C0118 2.5 mA V CLL_sat 0.4 V CLL leakage current V CLL /C0118 6.5 V ICLL_leak 1 /C0109A Response time to current change IOUT to CLL rise IOUT to CLL fall Max. difference between rise and fall time tCll_rise tCll_fall t/C0068/C0262rise-fall 0.1 0.1 /C0109s /C0109s /C0109s CLL output switching speed Rise Fall tCLL_rise tCLL–fall /C0109s /C0109s Current transmission rate 60 kHz Current transmission 3 dB bandwidth 500 kHz Function ENABLE1, ENABLE2 Enable low–level threshold V Enable_off 2 6.5 V Enable high-level threshold V Enable_on –0.3 0.8 V

Figure 5. Variation of power supply

Rev. A1, 21-May-97 Preliminary Information 10 (12) Application Circuit 5 V 47 nF 47 nF Out1 Return1 Enable1 OCM1 Enable2 CLL2 OCM2 U6268B Interface1 Interface2 22 nF GND SC V CC = 5V +V Batt I/O I/O I/O Sensor 1 Sensor 2 96 11710 V S /C0109C 220 /C0109F /C0049/C0048/C0048 nF CLL1I/O 1, 8, 9, 16 5 V 47 nF 47 nF Out2 Return2 V CC = 5V 750 750

Rev. A1, 21-May-97 11 (12)

Package Information

10.0 9.85 8.89 0.4 1.27 1.4 0.25 0.10 5.2 4.8 3.7 3.8 6.15 5.85 0.2 16 9

Rev. A1, 21-May-97 Preliminary Information 12 (12) Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423