U443 CALOGIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
FEATURES
- • Low Noise
APPLICATIONS
- • Differential Wideband Amplifiers
- • VHF/UHF Amplifiers
- • Test and Measurement
- • Multi-Chip/Hybrids
DESCRIPTION
The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage (< 1pA typical) and low noise this device is an excellent choice for high performance test and measurement, wideband amplifiers and VHF/UHF circuits.
ORDERING INFORMATION
Part Package Temperature Range U443-4 Hermetic M0-002AG (TO-78) -55oC to +150oC XU443-4 Sorted Chips in Carriers -55oC to +150oC PIN CONFIGURATION CORPORATION S1C TO-78 4 5 BOTTOM VIEW SOURCE 1 DRAIN 1 GATE 1 CASE/BODY SOURCE 2 DRAIN 2 GATE 2 CJ1
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Symbol Limit Unit Gate-Drain Voltage V GD -25 V Gate-Source Voltage V GS -25 V Gate-Gate Voltage V GG ±50 V Forward Gate Current I G 50 mA Power Dissipation (per side) P D 367 mW (total) 500 mW Power Derating (per side) 3 mW/ oC (total) 4 mW/ oC Operating Junction T emperature T J -55 to 150 oC Storage Temperature T stg -65 to 200 oC Lead Temperature (1/16" from case for 10 seconds) T L 300 oC ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL CHARACTERISTCS TYP 1 U443 U444 UNIT TEST CONDITIONS MIN MAX MIN MAX STATIC V(BR)GSS Gate-Source Breakdown Voltage -35 -25 -25 V IG = -1µA, VDS = 0V VGS(OFF ) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 V DS = 10V, ID = 1nA IDSS Saturation Drain Current 2 1 563 063 0 m A V DS = 10V, VGS = 0V IGSS Gate Reverse Current -1 -500 -500 pA V GS = -15V, VDS = 0V -2 nA T A = 150oC IG Gate Operating Current -1 -500 -500 pA V DG = 10V, ID = 5mA -0.3 nA T A = 125oC VGS(F) Gate-Source Forward Voltage 0.7 V I G = 1mA, VDS = 0V DYNAMIC gfs Common-Source Forward Transconductance 6 4.5 9 4.5 9 mS VDG = 10V, ID = 5mA f = 1kHzgos Common-Source Output Conductance 70 200 200 µS C iss Common-Source Input Capacitance 3 pF VDG = 10V, ID = 5mA f = 1MHzC rss Common-Source Reverse Transfer Capacitance 1 en Equivalent Input Noise Voltage 4 nV/ Hz VDG = 10V, ID = 5mA f = 10kHz MATCHING | VGS1 -VGS2 | Differential Gate-Source Voltage 6 10 20 mV V DG = 10V, ID = 5mA Δ | VGS1 -VGS2 | Δ T Gate-Source Voltage Differential Change with Temperature µV/ oC T = -55 to 25oC VDG =10V, ID = 5mA20 T = 25 to 125 oC IDSS1 IDSS2 Saturation Drain Current Ratio 0.97 V DS = 10V, VGS = 0V gfs1 gfs2 Transconductance Ratio 0.97 VDG = 10V, ID = 5mA f= 1 kHz CMRR Common Mode Rejection Ratio 85 dB V DD = 5 to 10V, ID = 5mA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300µs, duty cycle ≤ 3%.