U441 MICROSS | Alldatasheet

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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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Direct Replacement for SILICONIX U441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1 pA ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 65°C to +150°C Operating Junction Temperature ‐ 55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain ‐ 25V Gate to Source ‐ 25V Gate to Gate ±50V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage 20 mV VDG = 10V, ID = 5mA Differential Gate to Source Cutoff Voltage Change with Temperature 20 µV/°C VDG = 10V, ID = 5mA TA = ‐55°C to +125°C IDSS1 / IDSS2 Gate to Source Saturation Current Ratio 0.07 % VDS = 10V, VGS = 0V Gfs1 / Gfs2 Forward Transconductance Ratio2 0.97 % VDS = 10V, ID = 5mA, f = 1kHz CMRR Common Mode Rejection Ratio 85 dB VDG = 5 to 10V, ID = 5mA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 25 V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐ 1 ‐ 3.5 ‐ 6 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current 6 15 30 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current3 ‐ 1 ‐ 500 pA VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐ 1 ‐ 500 pA VDG = 10V, ID = 5mA gfs Forward Transconductance 4.5 6 9 mS VDS = 10V, ID= 5mA, f = 1kHz gos Output Conductance 70 200 µS CISS Input Capacitance 3 pF VDS = 10V, ID = 5mA, f = 1MHz CRSS Reverse Transfer Capacitance 1 pF en Equivalent Input Noise Voltage 4 nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator The U441 is a tightly matched Monolithic Dual N-Channel JFET U441 MONOLITHIC DUAL N-CHANNEL JFET U441 Applications: ƒ Wideband Differential Amps ƒ High-Speed,Temp-Compensated Single- Ended Input Amps ƒ High-Speed Comparators ƒ Impedance Converters and vibrations detectors. The U441 are monolithic dual JFETs mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The U441 is a direct replacement for discontinued Siliconix U441. The hermetically sealed TO-71 is well suited for military applications. (See Packaging Information). Linear Systems replaces discontinued Siliconix U441 Available Packages: U441 in TO-71 U441 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx TO-71 (Top View)