LS845_SOT-23 MICROSS | Alldatasheet
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FEATURES
LOW DRIFT | V GS1‐2 / T| ≤25µV/°C LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2| ≤15mV ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. TEMPERATURE 25 µV/°C VDG=10V, ID=500µA TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 15 mV VDG=10V, ID=500µA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 60 ‐‐ ‐‐ V VDS = 0 ID=1nA BVGGO Gate‐To‐Gate Breakdown 60 ‐‐ ‐‐ V I G= 1nA ID= 0 IS= 0 YfSS TRANSCONDUCTANCE Full Conduction 1500 µmho VDG= 15V VGS= 0V f = 1kHz YfS Typical Operation 1000 1500 ‐‐ µmho VDG= 15V ID= 500µA |YFS1‐2 / Y FS| Mismatch ‐‐ 0.6 3 % IDSS DRAIN CURRENT Full Conduction 1.5 mA VDG= 15V VGS= 0V |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ 1 5 % VGS(off) or Vp GATE VOLTAGE Pinchoff voltage 3.5 V VDS= 15V ID= 1nA VGS(on) Operating Range 0.5 ‐‐ 3.5 V VDS=15V ID=500µA ‐IGmax. GATE CURRENT Operating pA VDG= 15V ID= 500µA ‐IGmax. High Temperature ‐‐ ‐‐ 50 nA TA= +125°C ‐IGmax. Reduced VDG ‐‐ 5 30 pA VDG = 3V ID= 500µA ‐IGSSmax. At Full Conduction ‐‐ ‐‐ 100 pA VDG= 15V , VDS =0 YOSS OUTPUT CONDUCTANCE Full Conduction µmho VDG= 15V VGS= 0V YOS Operating ‐‐ 0.2 2 µmho VDG= 15V ID= 500µA |YOS1‐2| Differential ‐‐ 0.02 0.2 µmho CMR COMMON MODE REJECTION ‐20 log | V GS1‐2/ V DS| 110 dB ∆VDS = 10 to 20V ID=500µA ‐20 log | V GS1‐2/ V DS| ‐‐ 85 ‐‐ ∆ VDS = 5 to 10V ID=500µA NF NOISE Figure 0.5 dB VDS= 15V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz en Voltage ‐‐ ‐‐ 7 nV/√Hz VDS=15V ID=500µA f=1KHz NBW=1Hz ‐‐ ‐‐ 11 VDS=15V ID=500µA f=10Hz NBW=1Hz CISS CAPACITANCE Input pF VDS= 15V, ID=500µA VDG= 15V, ID=500µA CRSS Reverse Transfer ‐‐ ‐‐ 3 LS845 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET LS845 Applications: Wideband Differential Amps High-Speed,Temp-Compensated Single- Ended Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. The LS845 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS845 features a 15- mV offset and 25-µV/°C drift. The 6 Pin SOT-23 package provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). Available Packages: LS845 / LS845 in SOT-23 LS845 / LS845 available as bare die Please contact Micross for full package and die dimensions Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution