U4285BM

U4285BM TEMIC | Alldatasheet

Document overview

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Technical content

Features

/C0068Reference oscillator up to 15 MHz /C0068Two programmable 16 bit dividers adjustable from 2 to 65535 /C0068Fine tuning steps: AM /C0121 1 kHz FM /C0121 2 kHz /C00684 programmable switching outputs (open drain up to 15 V) /C0068Few external component required due to integrated loop-push-pull stage for AM/FM /C0068High signal/ noise ratio

Ordering Information

Extended Type Number Package Remarks U4285BM-AFS SSO20 plastic U4285BM-AFSG3 SSO20 plastic Taping according to IEC-286-3 Block Diagram R-divider N-divider I2C bus interface Oscillator Phase Current sources Switching outputs AM/FM OSCOUT OSCIN SCL AS FMOSC AMOSC SDA 5678 10 1 20 SWO1 SWO4SWO2 SWO3 PDAM PDAMO VA C PDFMO PDFM GND2 GND1 DDV 95 10120 switch detector Figure 1.

Rev. A3, 14-May-97 2 (10) Pin Description 8 13 U4285BM SCL SDA AS SWO 1 SWO 2 SWO3 SWO4 GND1 OSCOUT OSCIN C VA PDAMO PDAM PDFM V DD 12FMOSC GND 2 PDFMO AMOSC10 95 10121 Pin Symbol Function

1 V DD Supply voltage

2 SCL I2C bus clock

3 SDA I2C bus data

4 AS Address selection

5 SWO 1 Switching output 1

6 SWO 2 Switching output 2

7 SWO3 Switching output 3

8 SWO4 Switching output 4

9 FMOSC FM oscillator input

10 GND 2 Ground 2 (analog)

11 AMOSC AM oscillator input

12 PDFMO FM analogue output

13 PDFM FM current output

14 PDAM AM current output

15 PDAMO AM analogue output

16 VA Analogue supply voltage

17 C Capacitor

18 OSCIN Oscillator input

19 OSCOUT Oscillator output

20 GND1 Ground 1 (digital)

The U4285BM is controlled via the 2-wire I2C bus. For programming there are one module address byte, two sub- address bytes and five data bytes. The module address contains a programmable address bit A 1 which with address select input AS (Pin 4) makes it possible to operate two U4285BM in one system. If bit A 1 is identical with the status of the address select input AS, the chip is selected . The subaddress determines which one of the data bytes is transmitted first. If subaddress of R-divider is trans- mitted, the sequence of the next data bytes is DB 0 (Status), DB 1 and DB 2. If subaddress of N-divider is transmitted, the sequence of the next data bytes is DB 3 and DB 4. The bit organisation of the module address, subaddress and 5 data bytes are shown in figure 2. Each transmission on the I 2C bus begins with the “START”- condition and has to be ended by the “STOP”- condition (see figure 3). The integrated circuit U4285BM has two separate inputs for AM and FM oscillator. Pre-amplified AM and FM signals are fed to the 16 bit N-divider via AM/FM switch. AM/FM switch is controlled by software. Tuning steps can be selected by 16 bit R-divider. Further there is a digital memory phase detector. There are two separate current sources for AM and FM amplifier (charge pump) as given in electrical characterisitics. It allows indepen- dent adjustment of gain, whereby providing high current for high speed tuning and low current for stable tuning.

Rev. A3, 14-May-97 3 (10) Bit Organization MSB LSB Module address 1 1 0 0 1 0 0/1 0 A7 A6 A5 A4 A3 A2 A1 A0 Subaddress (R-divider) X X X 0 0 1 X X Subaddress (N-divider) X X X X 1 1 X X MSB LSB Data byte 0 (Status) SWO1 SWO2 SWO3 SWO4 AM/ FM PD ANA PD POL PD CUR D7 D6 D5 D4 D3 D2 D1 D0 Data byte 1 215 R-divider 28 Data byte 2 27 R-divider 20 Data byte 3 215 N-divider 28 Data byte 4 27 N-divider 20 LOW HIGH AM/FM FM-operation AM-operation PD – ANA PD analog TEST PD – POL Negative polarity Positive polarity PD – CUR Output current 2 Output current 1 Figure 2.

Rev. A3, 14-May-97 4 (10) Transmission Protocol MSB LSB S Address A7 A0 A Subaddress R-divider A Data 0 A Data 1 A Data 2 A P MSB LSB S Address A7 A0 A Subaddress N–divider A Data 3 A Data 4 A A P S = Start P = Stop A = Acknowledge Figure 3. Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage Pin 1 V DD –0.3 to +6 V Input voltage Pins 2, 3, 4, 9, 11, 18 and 19 V I –0.3 to VDD + 0.3 V Output current Pins 3, 5, 6, 7 and 8 IO –1 to +5 mA Output drain voltage Pins 5, 6, 7 and 8 V OD 15 V Analogue supply voltage Pin 16 with 220 /C0087 seriell resistance 2 minutes 1 VA VA 6 to 15 V V Output current Pins 12 and 15 IAO –1 to +20 mA Ambient temperature range Tamb –30 to +85 /C0095C Storage temperature range Tstg –40 to +125 /C0095C Junction temperature Tj 125 /C0095C Electrostatic handling (modified MIL STD 883 D method 3015.7: all supply pins connected together) /C0034V ESD 1000 V 1 corresponding our application circuit (page 8) Thermal Resistance Parameters Symbol Value Unit Junction ambient R thJA 160 K/W

Rev. A3, 14-May-97 5 (10)

Electrical Characteristics

V DD = 5 V , VA = 10 V , Tamb = 25°C, unless otherwise specified Parameters Test conditions / Pin Symbol Min. Typ. Max. Unit Supply voltage Pin 1 V DD 4.5 5.0 5.5 V Quiescent supply currentAM-mode Pin 1 FM-mode IDD 4.0 4.0 7.0 7.0 mA FM input sensitivity, RG = 50 /C0087 FMOSC fi = 70 to 120 MHz Pin 9 V SFM 40 mV rms fi = 160 MHz Pin 9 V SFM 150 mV rms AM input sensitivity, RG = 50 /C0087 AMOSC fi = 0.6 to 35 MHz Pin 11 V SAM 40 mV rms Oscillator input sensitivity, RG = 50 /C0087 OSCIN fi = 0.1 to 15 MHz Pin 18 V SOSC 100 mV rms Switching output SWO 1, SWO 2, SWO 3, SWO 4 (open drain) Output voltage LOW Output leakage current HIGH Pins 5, 6, 7 and 8 IL = 1 mA Pins 5, 6, 7 and 8 V5, V6, V7, V8 = 10 V V SWOL IOHL 100 400 100 mV nA Phase detector PDFM Output current 1 Output current 2 Pin 13 Pin 13 /C0034IPDFM /C0034IPDFM 1600 400 2000 500 2400 600 /C0109A /C0109A Leakage current Pin 13 /C0034IPDFML 20 nA Phase detector PDAM Output current 1 Output current 2 Pin 14 Pin 14 /C0034IPDAM /C0034IPDAM 160 200 240 /C0109A /C0109A Leakage current Pin 14 /C0034IPDAM - L 20 nA Analogue output PDFMO, PDAMO Saturation voltage LOW HIGH Pins 12 and 15 I = 15 mA V satL V satH 9.5 200 9.95 400 mV V I2C bus SCL, SDA, AS Input voltage HIGH LOW Pins 2, 3 and 4V iBUS 3.0 V DD 1.5 V V Output voltage Acknowledge LOW Pin 3 ISDA = 3 mA V O 0.4 V Clock frequency Pin 2 fSCL 100 kHz Rise time SDA, SCL Pins 2 and 3 tr 1 /C0109s Fall time SDA, SCL Pins 2 and 3 tf 300 ns Period of SCL HIGH LOW Pin 2 HIGH LOW tH tL 4.0 4.7 /C0109s /C0109s

Figure 6. AM input sensitivity

4 MHz

Rev. A3, 14-May-97 8 (10) Recommendations for Applications /C0068C 3 = 100 nF should be very close to Pin 1 (VDD ) and Pin 20 (GND 1) /C0068GND 2 (Pin 10 – analogue ground) and GND 1 (Pin 20 – digital ground) must be connected according to figure 8 /C00684 MHz crystal must be very close to Pin 18 and Pin 19 /C0068Components of the charge pump (C1/R1 for AM and C 2/R2 for FM) should be very close to Pin 14 with respect to Pin 13. PCB-Layout 16 15 14 13 12 11 10913 4 25 7 8 6 GND DDV C 1 C 2 C 4 C 3 17181920 95 10124 Figure 8.

Rev. A3, 14-May-97 9 (10)

Package Information

6.75 6.50 0.25 0.65 5.85 1.30 0.15 0.05 5.7 5.3 4.5 4.3 6.6 6.3 0.15 20 11 11 0

Rev. A3, 14-May-97 10 (10) Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423